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| Ordering number:EN4653 FC152 PNP Epitaxial Planar Silicon Composite Transistor High-Frequency Amp, Differential Amp Applications Features * Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. * The FC152 is formed with two chips, being equivalent to the 2SC4270, placed in one package. * Excellent in thermal equilibrium, pair capability and especially suited for differerntial amp. Package Dimensions unit:mm 2104A [FC152] 1:Emitter 1 2:Base 1 3:Base 2 4:Collector 2 5:Emitter 2 6:Collector 1 1:Emitter 1 2:Base 1 3:Base 2 4:Collector 2 5:Emitter 2 6:Collector 1 SANYO:CP6 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC PT Tj Tstg 1 unit Conditions Ratings 25 15 3 50 200 300 150 -55 to +150 Unit V V V mA mW mW C C Electrical Characteristics at Ta = 25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Ratio B-E Voltage Difference Gain-Bnadwidth Product Output Capacitance Power Gain Noise Figure Symbol ICBO IEBO hFE VCB=20V, IE=0 VEB=2V, IC=0 VCE=10V, IC=5mA 60 0.7 0.95 3.0 1.5 3.0 0.7 12 3.0 1.0 10 mV GHz pF dB dB Conditons Ratings min typ max 0.1 10 200 Unit A A hFE(small/ VCE=10V, IC=5mA large) VBE(large- VCE=10V, IC=0 small) fT VCE=10V, IC=10mA Cob VCB=10V, f=1MHz PG NF VCE=10V, IC=10mA, f=0.9GHz VCE=10V, IC=3mA, f=0.9GHz Note:The specifications shown above are for each individual transistor. However, the specifications of hFE(small/large) and VBE(large-small) are for pair capability Marking:152 SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/41594TH (KOTO) X-7851 No.4653-1/4 FC152 No.4653-2/4 FC152 No.4653-3/4 FC152 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice. PS No.4653-4/4 |
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