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| Ordering number :EN2800B DD50R Diffused Junction Type Sillicon Diode Ultrahigh-Difinition Display Diode Features * High breakdown voltage (VRRM : 1500V) . * High reliability. * Capable of being mounted easily and dissipating heat rapidly because of one-point fixing type plastic molded package. * Fast forward / reverse recovery time. Package Dimensions unit:mm 1185A [DD50R] 1:Anode 2:Cathode 3:Anode SANYO:TOP3PB Specifications Absolute Maximum Ratings at Ta = 25C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Peak Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IOP IFSM Tj Tstg PW100s, duty50% 50Hz sine wave, 1 cycle Conditions Ratings 1500 1500 5 20 50 150 -55 to +150 Unit V V A A A C C Electrical Characteristics at Ta = 25C Parameter Reverse Voltage Forward Voltage Reverse Current Reverse Recovery Time Forward Recovery Time Junction Capacitance Thermal Resistance Symbol VR VF IR trr tfr Cj Rth(j-c) IR=1mA IF=5A VR=1000V IF=IR=100mA IF=100mA VR=10V, f=100KHz Junction-Case 0.1 90 1.25 Conditions Ratings min 1500 2 200 1 0.2 typ max Unit V V A s s pF C/W SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 32398GI/92995GI (KOTO) /4088TA, TS No.2800-1/2 DD50R 5 3 2 IF -- VF C Forward Current, IF -- A 10 5 3 2 = Ta 12 0 Junction Capacitance, Cj -- pF 75C 25C 5 3 2 Cj -- VR f=100kHz 100 7 5 3 2 1.0 5 3 2 10 7 0.1 5 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 5 1.0 2 3 5 7 10 2 3 5 7 100 2 Forward Voltage, VF -- V 70 Reverse Voltage, VR -- V IFSM -- t Thermal Resistance, Rth(j-C) -- C/W Rth(j-C) -- t 5 Surge Forward Current, IFSM(peak) -- A Current waveform 50Hz sine wave 60 IS 50 20ms 40 t Tc=25C 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.1 2 3 5 1.0 23 5 10 23 5 100 23 5 1000 30 20 10 0 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Time, t -- s Time, t -- ms No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 1998. Specifications and information herein are subject to change without notice. PS No.2800-2/2 |
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