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Preliminary
DESCRIPTION
The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.
MITSUBISHI SEMICONDUCTOR
MGF0916A
L & S BAND GaAs FET [ SMD non - matched ]
FEATURES
* High output power Po=23dBm(TYP.) @f=1.9GHz,Pin=5dBm * High power gain Gp=19dB(TYP.) @f=1.9GHz * High power added efficiency hadd=30%(TYP.) @f=1.9GHz,Pin=5dBm * Hermetic Package
APPLICATION
* For UHF Band power amplifiers
Fig.1
QUALITY
* GG
RECOMMENDED BIAS CONDITIONS
* Vds=6V * Ids=100mA * Rg=1kW
Delivery
Tape & Reel
(Ta=25C)
Absolute maximum ratings
Symbol
VGSO
Parameter
Gate to sourcebreakdown voltage
Ratings
-8 -8 250 -0.6 1.5 1.5 175 -65 to +175
Unit
V V mA mA mA W C C
VGDO Gate to drain breakdown voltage ID IGR IGF PT Tch Tstg
Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature
Electrical characteristics
Symbol
IDSS VGS(off) gm Po hadd GLP NF Rth(ch-c)
(Ta=25C)
Parameter
Saturated drain current Gate to source cut-off voltage Transconductance Output power Power added Efficiency Linear Power Gain Noise figure Thermal Resistance *1
Test conditions
Min. VDS=3V,VGS=0V VDS=3V,ID=0.1mA VDS=3V,ID=100mA VDS=6V,ID=100mA,f=1.9GHz Pin=5dBm VDS=6V,ID=100mA,f=1.9GHz DVf Method 150 -1.5 -
Limits
Typ. 200 90 23 30 19 1.0 70 Max. 250 -4.5 100
Unit
mA V mS dBm % dB dB C/W
*1:Channel to case /
Above parameters, ratings, limits are subject to change.
Mitsubishi Electric
July 1999
MGF0916A TYPICAL CHARACTERISTICS
Po,Gp,PAE vs.Pin
26 24 22 20 Po(dBm) 18 16 14 12 10 8 6 -15 -10 -5 0 Pin(dBm) 5 10 15 Gp 50
VDS=6V ID=0.1A f=1.9GHz
Po
45 40 PAE Gp(dB),PAE(%) 35 30 25 20 15 10 5 0
IM3,Po(SCL) vs. Pi(SCL)
30 20 Po(SCL) (dBm) 10 0 10
VD=6V ID=100mA f1=1.90GHz f2=1.91GHz
Po
0 -10 -20 IM3 (dBc)
IM3
-30 -40 -50 -60 -25 -20 -15 -10 -5 0 5 10 Pi(SCL) (dBm)
-10 -20 -30 -40
Mitsubishi Electric
July 1999
MGF0916A
freq. (GHz) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0 6.2 6.4 6.6 6.8 7.0
S PARAMETERS
S11 Mag 0.979 0.955 0.943 0.937 0.935 0.936 0.938 0.939 0.942 0.944 0.945 0.947 0.948 0.949 0.950 0.951 0.951 0.952 0.952 0.951 0.951 0.950 0.949 0.947 0.945 0.942 0.939 0.935 0.930 0.924 0.917 0.909 0.898 0.887 Ang(deg) -52.18 -72.24 -88.04 -100.40 -110.19 -117.99 -124.41 -129.65 -134.07 -137.67 -140.93 -143.65 -146.01 -148.06 -149.86 -151.46 -152.88 -154.16 -155.32 -156.40 -157.40 -158.33 -159.22 -160.07 -160.89 -161.69 -162.47 -163.24 -163.98 -164.69 -165.38 -165.99 -166.51 -166.90
(Ta=25C, VDS=6V, ID=100mA, Reference Plane see Fig.1)
S21 Mag 7.080 5.903 4.885 4.054 3.388 2.855 2.428 2.082 1.800 1.571 1.375 1.216 1.083 0.971 0.879 0.800 0.734 0.678 0.631 0.591 0.558 0.529 0.505 0.484 0.467 0.452 0.439 0.429 0.421 0.416 0.413 0.413 0.416 0.424 Ang(deg) 134.08 115.68 100.43 87.73 77.05 67.91 60.03 53.09 46.96 41.50 36.44 31.86 27.62 23.66 19.90 16.36 12.94 9.65 6.43 3.29 0.13 -3.00 -6.17 -9.36 -12.67 -16.04 -19.56 -23.21 -27.10 -31.31 -35.71 -40.48 -45.66 -51.25 Mag 0.013 0.015 0.015 0.015 0.014 0.014 0.013 0.012 0.011 0.011 0.011 0.010 0.009 0.009 0.009 0.008 0.008 0.008 0.008 0.007 0.007 0.007 0.007 0.007 0.007 0.007 0.007 0.007 0.007 0.007 0.007 0.007 0.007 0.007 S12 Ang(deg) 37.44 27.67 18.92 11.04 3.93 -2.53 -8.32 -13.52 -18.05 -21.84 -25.23 -27.88 -29.94 -31.46 -32.53 -33.14 -33.45 -33.49 -33.41 -33.23 -33.14 -33.16 -33.38 -33.85 -34.66 -35.79 -37.30 -39.09 -41.21 -43.61 -45.99 -48.34 -50.41 -51.91 Mag 0.508 0.569 0.626 0.677 0.720 0.758 0.789 0.816 0.839 0.858 0.875 0.890 0.902 0.913 0.922 0.930 0.937 0.943 0.948 0.953 0.957 0.961 0.965 0.968 0.971 0.973 0.976 0.978 0.980 0.982 0.984 0.986 0.988 0.990 S22 Ang(deg) -53.57 -71.98 -86.03 -96.90 -105.58 -112.56 -118.45 -123.36 -127.61 -131.21 -134.46 -137.31 -139.85 -142.13 -144.19 -146.07 -147.79 -149.36 -150.81 -152.15 -153.39 -154.54 -155.60 -156.59 -157.50 -158.36 -159.16 -159.91 -160.62 -161.29 -161.95 -162.59 -163.23 -163.88 K 0.15 0.21 0.26 0.30 0.36 0.38 0.45 0.49 0.55 0.59 0.63 0.68 0.72 0.76 0.79 0.81 0.83 0.85 0.86 0.87 0.89 0.90 0.92 0.95 0.99 1.03 1.08 1.13 1.19 1.26 1.30 1.34 1.34 1.31 MSG/MAG (dB) 27.23 25.88 25.10 24.37 23.84 23.15 22.81 22.30 21.97 21.58 21.17 20.87 20.58 20.31 20.06 19.83 19.61 19.42 19.24 19.09 18.95 18.82 18.70 18.59 18.48 17.35 16.59 16.00 15.47 14.95 14.60 14.38 14.31 14.46
2.0
Gate Mark Round corner (1)
0.80
0.8
Gate Mark
(1) Reference Plane
4.20
(3)
1.20
Reference Plane (2)
4.00
(2)
0.25 2.5
0.6
(1) Gate (2) Drain (3) Source
0.3
B A C K S ID E P A T T E RN
(Unit:mm)
Fig.1 OU T LINE DR A W ING
Mitsubishi Electric July 1999
2.8

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