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Power Transistors
2SC3974
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
q q q q q
16.20.5 12.5 3.5 Solder Dip
High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25C)
Ratings 800 800 500 500 15 7 4 80 3 150 -55 to +150 Unit V V V V A A A W C C
0.7
s Features
15.00.3 11.00.2
5.00.2 3.2
21.00.5 15.00.2
3.20.1
2.00.2 2.00.1 1.10.1 5.450.3 10.90.5 1 2 3 0.60.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg
1:Base 2:Collector 3:Emitter TOP-3 Full Pack Package(a)
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
(TC=25C)
Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 800V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 4A IC = 4A, IB = 0.8A IC = 4A, IB = 0.8A VCE = 10V, IC = 0.5A, f = 1MHz IC = 4A, IB1 = 0.8A, IB2 = -1.6A, VCC = 200V 20 1.0 3.0 0.3 500 15 8 1.0 1.5 V V MHz s s s min typ max 100 100 Unit A A V
1
Power Transistors
PC -- Ta
120 12 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) Without heat sink (PC=3W) (1) 60 TC=25C 10
2SC3974
IC -- VCE
Collector to emitter saturation voltage VCE(sat) (V)
100 IC/IB=5 30 10 3 1 0.3 0.1 0.03 0.01 0.1 TC=100C 25C -25C
VCE(sat) -- IC
Collector power dissipation PC (W)
100
Collector current IC (A)
80
8
IB=90mA 50mA 40mA
6
40
4
30mA 20mA
20
(2) (3)
2
10mA 5mA
0 0 20 40 60 80 100 120 140 160
0 0 2 4 6 8 10 12
0.3
1
3
10
30
100
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) -- IC
100
hFE -- IC
IC/IB=5 1000 VCE=5V 1000
fT -- IC
VCE=10V f=1MHz TC=25C
Base to emitter saturation voltage VBE(sat) (V)
Forward current transfer ratio hFE
30
300
Transition frequency fT (MHz)
3 10 30 100
300
10
100 TC=100C 30 25C -25C
100
3 TC=-25C 100C 25C 0.3
30
1
10
10
3
3
0.1 0.1
0.3
1
3
10
30
100
1 0.1
0.3
1
1 0.01 0.03
0.1
0.3
1
3
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Cob -- VCB
10000 100 IE=0 f=1MHz TC=25C 30
ton, tstg, tf -- IC
Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=-IB2) VCC=200V TC=25C
Area of safe operation (ASO)
100 30 ICP Non repetitive pulse TC=25C
Collector output capacitance Cob (pF)
Switching time ton,tstg,tf (s)
3000
Collector current IC (A)
10 3
10 3
IC
t=0.5ms 1ms 10ms DC
1000
tstg 1 0.3 0.1 0.03 ton tf
300
1 0.3 0.1 0.03 0.01
100
30
10 1 3 10 30 100
0.01 0 1 2 3 4 5 6 7 8
1
3
10
30
100
300
1000
Collector to base voltage VCB (V)
Collector current IC (A)
Collector to emitter voltage VCE (V)
2
Power Transistors
Area of safe operation, reverse bias ASO
8 7 ICP Lcoil=30H IC/IB=5 (IB1=-IB2) TC100C
2SC3974
Reverse bias ASO measuring circuit
L coil IB1 Vin T.U.T IC
Collector current IC (A)
6 5 4 3 2 1 0 0 100 200 300 400 500 600 700 800
-IB2
VCC
tW
Vclamp
Collector to emitter voltage VCE (V)
Rth(t) -- t
10000 Note: Rth was measured at Ta=25C and under natural convection. (1) PT=10V x 0.3A (3W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink
Thermal resistance Rth(t) (C/W)
1000
100 (1)
10
(2)
1
0.1 10-4
10-3
10-2
10-1
1
10
102
103
104
Time t (s)
3
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2001 MAR

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