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Power Transistors
2SD1745
Silicon NPN epitaxial planar type
For power switching Complementary to 2SB1175
Unit: mm
7.00.3 3.00.2 3.50.2
s Features
q q q q
7.20.3
0.80.2
1.10.1
0.850.1 0.40.1
Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25C)
Ratings 130 80 7 8 4 15 1.3 150 -55 to +150 Unit V
1.00.2
10.0 -0.
+0.3
0.750.1
2.30.2 4.60.4 1 2 3
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
1:Base 2:Collector 3:Emitter I Type Package
3.50.2 2.00.2
7.00.3
Unit: mm
0 to 0.15
3.00.2
10.20.3 7.20.3
V A A
1.0 max.
2.5
0.750.1 1.10.1
0.5 max.
0.90.1 0 to 0.15
W
1 2 3
C C
2.30.2 4.60.4
1:Base 2:Collector 3:Emitter I Type Package (Y)
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
*h
(TC=25C)
Symbol ICBO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 100V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 2V, IC = 0.1A VCE = 2V, IC = 1A IC = 3A, IB = 0.15A IC = 3A, IB = 0.15A VCE = 10V, IC = 0.5A, f = 10MHz IC = 1A, IB1 = 0.1A, IB2 = - 0.1A, VCC = 50V 30 0.5 2.5 0.15 80 45 90 260 0.5 1.5 V V MHz s s s min typ max 10 50 Unit A A V
FE2
Rank classification
Q 90 to 180 P 130 to 260
Rank hFE2
2.50.2
1.0
2.50.2
V
1.0
1
Power Transistors
PC -- Ta
20 8 (1) TC=Ta (2) Without heat sink (PC=1.3W) TC=25C 7 IB=300mA 140mA 120mA 100mA 60mA 40mA 3 2 1 0 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 20mA 10mA
2SD1745
IC -- VCE
Collector to emitter saturation voltage VCE(sat) (V)
10 IC/IB=20 3 1 0.3 0.1 0.03 0.01 0.003 0.001 0.01 0.03 25C -25C TC=100C
VCE(sat) -- IC
Collector power dissipation PC (W)
15
Collector current IC (A)
(1)
6 5 4
10
5
(2) 0
0.1
0.3
1
3
10
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) -- IC
100 10000 IC/IB=20
hFE -- IC
10000 VCE=2V 3000 1000 300 100 30 10 3 1 0.01 0.03
fT -- IC
VCE=10V f=10MHz TC=25C
Base to emitter saturation voltage VBE(sat) (V)
Forward current transfer ratio hFE
10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=-25C 100C 25C
1000 300 100 -25C 30 10 3 1 0.01 0.03
TC=100C 25C
0.1
0.3
1
3
10
0.1
0.3
1
3
10
Transition frequency fT (MHz)
30
3000
0.1
0.3
1
3
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Cob -- VCB
10000 100 IE=0 f=1MHz TC=25C 30
ton, tstg, tf -- IC
Pulsed tw=1ms Duty cycle=1% IC/IB=10 (IB1=-IB2) VCC=50V TC=25C
Area of safe operation (ASO)
100 30 Non repetitive pulse TC=25C
Collector output capacitance Cob (pF)
3000 1000 300 100 30 10 3 1 0.1
Switching time ton,tstg,tf (s)
Collector current IC (A)
10 3 1 0.3 ton 0.1 0.03 0.01
10 ICP IC 3
t=10ms
tstg tf
1ms 1 0.3 0.1 0.03 0.01 300ms
0.3
1
3
10
30
100
0
1
2
3
4
5
1
3
10
30
100
300
1000
Collector to base voltage VCB (V)
Collector current IC (A)
Collector to emitter voltage VCE (V)
2
Power Transistors
Rth(t) -- t
103 (1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink
2SD1745
Thermal resistance Rth(t) (C/W)
102
(1) (2)
10
1
10-1 10-4
10-3
10-2
10-1
1
10
102
103
104
Time t (s)
3

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