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Power Transistors
2SD1742, 2SD1742A
Silicon NPN triple diffusion planar type
For low-freauency power amplification Complementary to 2SB1172 and 2SB1172A
Unit: mm
7.00.3 3.00.2 3.50.2
0.80.2
s Features
q q q
High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25C)
Ratings 60 80 60 80 6 5 3 15 1.3 150 -55 to +150 Unit V
7.20.3
1.10.1
1.00.2 10.0 -0.
+0.3
0.850.1 0.40.1
0.750.1
2.30.2 4.60.4 1 2 3
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1742 2SD1742A 2SD1742 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
1:Base 2:Collector 3:Emitter I Type Package
3.50.2 2.00.2
7.00.3
Unit: mm
0 to 0.15
emitter voltage 2SD1742A Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature
V
10.20.3 7.20.3
V A A
3.00.2
1.0 max.
2.5
0.750.1
0.5 max.
0.90.1 0 to 0.15
W C C
1.10.1
1
2
3
2.30.2 4.60.4
s
Electrical Characteristics (TC=25C)
Parameter Symbol ICES ICEO IEBO 2SD1742 2SD1742A VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf Conditions VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VCE = 30V, IB = 0 VCE = 60V, IB = 0 VEB = 6V, IC = 0 IC = 30mA, IB = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 3A VCE = 4V, IC = 3A IC = 3A, IB = 0.375A VCE = 10V, IC = 0.5A, f = 10MHz IC = 1A, IB1 = 0.1A, IB2 = - 0.1A, VCC = 50V 30 0.5 2.5 0.4 60 80 70 10 min typ 2SD1742 2SD1742A 2SD1742 2SD1742A
1:Base 2:Collector 3:Emitter I Type Package (Y)
max 200 200 300 300 1
Unit A A mA V
Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage
Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
*h FE1
250
1.8 1.2
V V MHz s s s
Rank classification
Q 70 to 150 P 120 to 250
Rank hFE1
2.50.2
1.0
2.50.2
1.0
1
Power Transistors
PC -- Ta
20 5 (1) TC=Ta (2) Without heat sink (PC=1.3W) TC=25C
2SD1742, 2SD1742A
IC -- VCE
8 VCE=4V 7 25C 6 5 4 3 2 1 0 0 0 2 4 6 8 10 12 0 0.4 0.8 1.2 1.6 2.0 2.4 TC=100C -25C
IC -- VBE
Collector power dissipation PC (W)
Collector current IC (A)
15 (1)
IB=100mA 90mA 80mA 70mA 60mA 50mA 40mA 30mA 20mA 1 10mA
3
10
2
5
(2) 0 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
4
Base to emitter voltage VBE (V)
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
100 IC/IB=8 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 -25C TC=100C 25C 10000
hFE -- IC
10000 VCE=4V 3000 1000 300 100 30 10 3 1 0.01 0.03
fT -- IC
VCE=10V f=10MHz TC=25C
Forward current transfer ratio hFE
1000 300 100 30 10 3 1 0.01 0.03 TC=100C -25C 25C
0.1
0.3
1
3
10
0.1
0.3
1
3
10
Transition frequency fT (MHz)
3000
0.1
0.3
1
3
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Area of safe operation (ASO)
100 30 103 Non repetitive pulse TC=25C
Rth(t) -- t
(1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink
Thermal resistance Rth(t) (C/W)
Collector current IC (A)
10 3 1 0.3 0.1 0.03 0.01 1
ICP IC 300ms
102
t=10ms 1ms
(1) (2)
10
1
2SD1742A
2SD1742
3
10
30
100
300
1000
10-1 10-4
10-3
10-2
10-1
1
10
102
103
104
Collector to emitter voltage VCE
(V)
Time t (s)
2

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