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| Ordering number:ENN1056C PNP Epitaxial Planar Silicon Transistors 2SA1256 High Frequency Amp Applications Applications * Ideally suited for use in FM RF amplifiers, mixers, oscillators, converters, and IF amplifiers. Package Dimensions unit:mm 2018B [2SA1256] Features * High fT (230MHz typ), and small Cre (1.1pF typ). * Small NF (2.5dB typ). 0.5 0.4 3 0.16 0 to 0.1 1 0.95 0.95 2 1.9 2.9 0.8 1.1 0.5 1.5 2.5 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions 1 : Base 2 : Emitter 3 : Collector SANYO : CP Ratings -30 -20 -5 -30 150 125 -55 to +125 Unit V V V mA W C C Electrical Characteristics at Ta = 25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Reverse Transfer Capacitace Base-to-Collector Time Constant Noise Figure Voltage Gain Symbol ICBO IEBO hFE fT Cre rbb', Cc NF PG VCB=(-)10V, IE=0 VEB=(-)4V, IC=0 VCE=(-)6V, IC=(-)1mA VCE=(-)6V, IC=(-)1mA VCB=-6V, f=1MHz VCE=-6V, IC=-1mA, f=31.9MHz VCE=-6V, IC=-1mA, f=100MHz VCE=-6V, IC=-1mA, f=100MHz E4 90 to 180 E5 135 to 180 60* 150 230 1.1 11 2.5 22 1.7 20 Conditions Ratings min typ max -0.1 -0.1 270* MHz pF ps dB dB Unit A A * : The 2SA1256 is classified by 1mA hFE as follows : Note : Marking : E hFE rank : 3, 4, 5 Rank hFE E3 60 to 120 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 73102TN (KT)/71598HA (KT)/40196TS (KOTO) 8-4689/3187AT/D064MW/8182KI, TS No.1056-1/5 2SA1256 NF, PG Test Circuit to 5pF L3 L2 0.01F INPUT 50 to 30pF VCE L1 0.01F to 22pF to 22pF OUTPUT 50 to 30pF VBE L1 : 1mmo plated wire 10mmo 5T, tap : 2T from VBE side L2 : 1mmo plated wire 10mmo 7T, tap : 1T from VCE side L3 : 1mmo enamel wire 10mmo 3T --10 IC -- VCE --70A --100 IB -- VBE VCE=--6V Collector Current, IC - mA --8 --60A --50A Base Current, IB - A --80 --6 --40A --30A --60 --4 --40 --20A --2 --10A --20 0 0 IB=0 --2 --4 --6 --8 Collector-to-Emitter Voltage, VCE - V --10 ITR03107 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 ITR03108 Base-to-Emitter Voltage, VBE - V 1000 1000 7 5 hFE -- IC fT -- IC Gain-Bandwidth Product, fT - MHz 7 5 VCE=--12V --6 V DC Current Gain, hFE 3 2 VCE=--12V --3V --6V 3 V --3 100 7 5 3 2 2 100 7 5 10 --0.1 2 2 3 5 7 --1.0 2 5 7 --10 3 Collector Current, IC - mA 2 3 5 --1.0 3 2 ITR03109 3 5 7 2 --10 Collector Current, IC - mA 3 5 ITR03110 Cre -- VCB Base-to-Collector Time Constant,rbb 'Cc - ps rbb' Cc -- IC f=31.9MHz Reverse Transfer Capacitance, Cre - pF f=1MHz 2 10 7 5 3 2 100 7 5 3 2 1.0 7 5 3 10 7 5 3 VCE=--3V V --6 --12V 2 3 5 --0.1 2 2 3 5 7 --1.0 23 5 7 --10 Collector-to-Base Voltage, VCB - V 2 3 5 --0.1 2 2 3 ITR03111 5 7 --1.0 23 5 7 --10 Collector Current, IC - mA ITR03112 No.1056-2/5 2SA1256 --10 7 5 VCE(sat) -- IC Collector Dissipation, PC - mW 200 PC -- Ta Collector-to-Emitter Saturation Voltage, VCE (sat) - V 3 2 160 150 IC /I B =2 10 0 --1.0 7 5 3 2 120 80 5 --0.1 7 5 40 --0.1 2 3 2 3 Input Admittance, yie -- IC f=1.0MHz VCE=--6V 5 7 --1.0 2 3 5 7 --10 Collector Current, IC - mA 2 3 5 0 0 20 40 60 80 100 120 140 ITR03113 Ambient Temperature, Ta - C 2 100 7 5 5 3 2 ITR03114 Output Admittance, yoe -- IC f=1.0MHz VCE=--6V 5 3 2 1.0 7 5 goe -- S gie -- mS 10 7 5 3 10 7 5 3 2 2 0.1 7 5 3 2 5 7 2 3 --1.0 Collector Current, IC - mA 5 7 10 7 5 3 c oe 2 2 --10 5 3 2 2 1.0 5 7 ITR03115 100 7 5 3 2 2 3 5 --1.0 Collector Current, IC - mA 7 --10 1.0 ITR03116 100 7 5 3 5 3 2 Input Admittance, yie -- IC f=10MHz VCE=--6V Output Admittance, yoe -- IC f=10MHz VCE=--6V g oe 2 gie -- mS goe -- S cie -- pF 1.0 7 5 3 100 7 10 7 5 10 7 5 3 g ie 5 3 c ie 2 2 3 2 coe 2 0.1 5 7 2 3 5 --1.0 Collector Current, IC - mA 7 --10 10 1.0 5 7 ITR03117 100 7 5 3 2 5 2 3 5 --1.0 Collector Current, IC - mA 7 --10 5 3 2 1.0 ITR03118 100 7 5 3 2 Input Admittance, yie -- IC f=100MHz VCE=--6V c ie Output Admittance, yoe -- IC f=100MHz VCE=--6V coe 3 2 goe -- mS gie -- mS cie -- pF 1.0 7 5 3 1.0 7 10 7 5 3 2 10 7 goe g ie 5 3 2 5 3 2 2 1.0 3 5 7 2 3 --1.0 Collector Current, IC - mA 5 7 --10 1.0 0.1 3 5 7 ITR03119 2 3 --1.0 Collector Current, IC - mA 5 7 --10 0.1 ITR03120 No.1056-3/5 coe -- pF coe -- pF coe -- pF cie -- pF 3 c ie g ie 3 g oe 2SA1256 3 2 100 7 5 Forward Transfer Admittance, yfe -- IC f=100MHz VCE=--6V 3 2 100 7 3 2 1.0 7 Reverse Transfer Admittance, yre -- IC f=100MHz VCE=--6V 3 2 1.0 7 --cre gfe -- mS bfe -- mS gre -- mS 3 2 3 --b f e 2 3 2 3 2 10 7 5 3 2 3 5 7 2 3 --1.0 Collector Current, IC - mA 5 7 10 7 5 3 0.1 7 5 3 --gre 0.1 7 5 3 --10 5 3 2 2 3 5 ITR03121 7 2 3 --1.0 Collector Current, IC - mA 5 7 --10 10 7 5 3 2 ITR03122 5 3 2 Input Admittance, yie -- VCE f=100MHz IC=--1.0mA 10 7 5 3 2 Output Admittance, yoe -- VCE f=100MHz IC=--1.0mA cie coe goe -- mS gie -- mS 10 7 5 3 2 cie -- pF 10 7 5 1.0 7 5 1.0 goe 7 5 3 2 gie 3 3 2 2 1.0 7 Forward Transfer Admittance, yfe -- VCE 5 5 3 2 2 3 5 7 --1.0 --10 Collector-to-Emitter Voltage, VCE - V 2 ITR03123 1.0 0.1 7 f=100MHz IC=--1.0mA gfe Reverse Transfer Admittance, yre -- VCE 5 5 3 2 2 3 5 7 --1.0 --10 Collector-to-Emitter Voltage, VCE - V 2 ITR03124 0.1 3 2 f=100MHz IC=--1.0mA 3 2 --cre 1.0 1.0 7 5 3 gfe -- mS bfe -- mS 10 7 5 3 2 7 5 3 2 7 5 3 2 --gre 2 0.1 7 0.1 7 7 2 3 5 7 --1.0 --10 Collector-to-Emitter Voltage, VCE - V 2 ITR03126 5 1.0 7 --1.0 --10 Collector-to-Emitter Voltage, VCE - V 2 3 5 7 2 ITR03125 1.0 5 Power Gain, PG - dB 32 PG, NF -- ID See specified Test Circuit. f=100MHz VCE=--6V PG 28 24 4 NF 2 3 5 2 3 --1.0 Collector Current, IC - mA 7 5 7 --10 0 ITR03127 Noise Figure, NF - dB 20 6 No.1056-4/5 cre -- pF 10 gre -- mS --bfe coe -- pF cre -- pF g fe 5 5 5 2SA1256 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2002. Specifications and information herein are subject to change without notice. PS No.1056-5/5 |
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