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| Composite Transistors XN6543 Silicon NPN epitaxial planer transistor Unit: mm For low-noise amplification (2GHz band) 0.650.15 6 0.95 2.8 -0.3 +0.2 +0.25 1.5 -0.05 0.650.15 1 0.3 -0.05 0.5 -0.05 2.9 -0.05 q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 1.90.1 +0.2 s Features 5 2 0.95 4 3 1.1-0.1 q 2SC3904 x 2 elements 0.40.2 s Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Emitter to base voltage Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg (Ta=25C) Ratings 15 10 2 65 200 150 -55 to +150 Unit V V V mA mW C C 1 : Collector (Tr1) 2 : Base (Tr1) 3 : Collector (Tr2) 4 : Base (Tr2) 5 : Emitter (Tr2) 6 : Emitter (Tr1) EIAJ : SC-74 Mini Type Package (6-pin) Marking Symbol: 9Y Internal Connection 6 5 4 Tr1 1 2 3 Tr2 s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Transition frequency Collector output capacitance Forward transfer gain Power gain Noise figure *1 (Ta=25C) Symbol ICBO IEBO hFE hFE (small/large)*1 fT Cob | S21e |2 GUM NF Conditions VCB = 10V, IE = 0 VEB = 1V, IC = 0 VCE = 8V, IC = 20mA VCE = 8V, IC = 20mA VCE = 8V, IC = 20mA VCB = 10V, IE = 0, f = 1MHz VCE = 8V, IC = 20mA, f = 1.5GHz VCE = 8V, IC = 20mA, f = 1.5GHz VCE = 8V, IC = 7mA, f = 1.5GHz 7 50 0.5 7.0 120 0.99 8.5 0.6 9 10 2.2 3.0 1.0 GHz pF dB dB dB min typ max 1 1 300 Unit A A Ratio between 2 elements 0 to 0.05 0.1 to 0.3 0.8 0.16-0.06 s Basic Part Number of Element +0.2 +0.1 1.450.1 +0.1 +0.1 1 Composite Transistors PT -- Ta 240 XN6543 IC -- VCE 30 Ta=25C IB=250A 120 VCE=8V 100 IC -- VBE Total power dissipation PT (mW) 200 25 Collector current IC (mA) Collector current IC (mA) 160 20 200A 80 Ta=75C 25C 120 15 150A 60 -25C 80 10 100A 40 40 5 50A 20 0 0 40 80 120 160 0 0 2 4 6 8 10 12 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC 10 hFE -- IC IC/IB=10 240 VCE=8V 12 fT -- IC VCE=8V f=1.5GHz Ta=25C Collector to emitter saturation voltage VCE(sat) (V) Forward current transfer ratio hFE 200 Ta=75C Transition frequency fT (GHz) 10 30 100 10 1 160 8 0.1 Ta=75C 25C -25C 120 25C 80 -25C 40 6 4 0.01 2 0.001 0.1 0.3 1 3 10 30 100 0 0.1 0.3 1 3 0 1 3 10 30 100 Collector current IC (mA) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 1.2 GUM -- IC f=1MHz IE=0 Ta=25C NF -- IC VCE=8V f=1.5GHz Ta=25C 6 VCE=8V f=1.5GHz Ta=25C 12 Collector output capacitance Cob (pF) 1.0 10 5 Power gain GUM (dB) Noise figure NF (dB) 0.8 8 4 0.6 6 3 0.4 4 2 0.2 2 1 0 1 3 10 30 100 0 0.1 0.3 1 3 10 30 100 0 0.1 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Collector current IC (mA) Collector current IC (mA) 2 |
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