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PD -91784B
IRG4BC10SD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
C
Standard Speed CoPack IGBT
VCES = 600V
* Extremely low voltage drop 1.1Vtyp. @ 2A * S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. * Very Tight Vce(on) distribution * IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations * Industry standard TO-220AB package
G E
VCE(on) typ. = 1.10V
@VGE = 15V, IC = 2.0A
n-channel
Benefits
* Generation 4 IGBTs offer highest efficiencies available * IGBTs optimized for specific application conditions * HEXFRED diodes optimized for performance with IGBTs . Minimized recovery characteristics require less/no snubbing * Lower losses than MOSFET's conduction and Diode losses
TO-220AB Max.
600 14 8.0 18 18 4.0 18 20 38 15 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m)
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw.
Units
V
A
V W C
Thermal Resistance
Parameter
RJC RJC RCS RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
--- --- --- --- ---
Typ.
--- --- 0.50 --- 2.0(0.07)
Max.
3.3 7.0 --- 80 ---
Units
C/W
g (oz)
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1
07/04/07
IRG4BC10SD
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)CES
V(BR)CES/TJ
VCE(on)
VGE(th) VGE(th)/TJ gfe ICES VFM IGES
Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 -- Temperature Coeff. of Breakdown Voltage -- 0.64 Collector-to-Emitter Saturation Voltage -- 1.58 -- 2.05 -- 1.68 Gate Threshold Voltage 3.0 -- Temperature Coeff. of Threshold Voltage -- -9.5 Forward Transconductance 3.65 5.48 Zero Gate Voltage Collector Current -- -- -- -- Diode Forward Voltage Drop -- 1.5 -- 1.4 Gate-to-Emitter Leakage Current -- --
Max. Units Conditions -- V VGE = 0V, IC = 250A -- V/C VGE = 0V, IC = 1.0mA 1.8 IC = 8.0A VGE = 15V -- V IC = 14.0A See Fig. 2, 5 -- IC = 8.0A, TJ = 150C 6.0 VCE = VGE, IC = 250A -- mV/C VCE = VGE, IC = 250A -- S VCE = 100V, IC =8.0A 250 A VGE = 0V, VCE = 600V 1000 VGE = 0V, VCE = 600V, TJ = 150C 1.8 V IC =4.0A See Fig. 13 1.7 IC =4.0A, TJ = 150C 100 nA VGE = 20V
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. Max. Units 15 22 2.42 3.6 6.53 9.8 76 -- 32 -- 815 1200 720 1080 0.31 -- 3.28 -- 3.60 10.9 1.46 2.6 70 -- 36 -- 890 -- 890 -- 3.83 -- 7.5 -- 280 -- 30 -- 4.0 -- 28 42 38 57 2.9 5.2 3.7 6.7 40 60 70 105 280 -- 235 -- nC Conditions IC = 8.0A VCC = 400V See Fig. 8 VGE = 15V TJ = 25C IC = 8.0A, VCC = 480V VGE = 15V, RG = 100 Energy losses include "tail" and diode reverse recovery. See Fig. 9, 10, 18 IC = 5.0A TJ = 150C, See Fig. 10,11, 18 IC = 8.0A, VCC = 480V VGE = 15V, RG = 100 Energy losses include "tail" and diode reverse recovery. Measured 5mm from package VGE = 0V VCC = 30V See Fig. 7 = 1.0MHz TJ = 25C See Fig. 14 IF =4.0A TJ = 125C TJ = 25C See Fig. TJ = 125C 15 VR = 200V TJ = 25C See Fig. 16 di/dt = 200A/s TJ = 125C TJ = 25C See Fig. TJ = 125C 17
ns
mJ mJ ns
mJ nH pF ns A nC A/s
Details of note through are on the last page
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IRG4BC10SD
10.0
For both:
8.0
LOAD CURRENT (A)
Duty cycle: 50% TJ = 125C Tsink = 90C Gate drive as specified
Power Dissipation = 9.2 W
6.0
Square wave: 60% of rated voltage
4.0
I
2.0
Ideal diodes
0.0 0.1
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
100
TJ = 25 C
10
T = 150 C J
I C , Collector-to-Emitter Current (A)
I C , Collector Current (A)
10
TJ = 150 C
TJ = 25 C V CC = 50V 5s PULSE WIDTH 5s PULSE WIDTH
6 8 10 12
1 0.5
V GE = 15V 80s PULSE WIDTH
1.0 1.5 2.0 2.5 3.0
1
VCE , Collector-to-Emitter Voltage (V)
VGE , Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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IRG4BC10SD
16
3.00
VCE , Collector-to-Emitter Voltage(V)
VGE = 15V 80 us PULSE WIDTH IC = 16 A
Maximum DC Collector Current(A)
12
2.50
8
2.00
IC =
8A
4
1.50
IC =
4A
0
25
50
75
100
125
150
1.00 -60 -40 -20
0
20
40
60
80 100 120 140 160
TC , Case Temperature ( C)
TJ , Junction Temperature ( C)
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature
10
Thermal Response (Z thJC )
D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BC10SD
500
400
VGE , Gate-to-Emitter Voltage (V)
VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc
20
VCC = 400V I C = 8A
C, Capacitance (pF)
Cies
300
15
Coes
200
10
100
Cres
5
0
1
10
100
0
0
5
10
15
20
VCE , Collector-to-Emitter Voltage (V)
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
3.60
Total Switching Losses (mJ)
Total Switching Losses (mJ)
V CC = 480V V GE = 15V TJ = 25 C 3.55 I C = 8A
3.50
100
RG =100 Ohm VGE = 15V VCC = 480V IC = 16 A
10
3.45
IC = IC =
1
8A 4A
3.40
3.35
3.30
0
20
40
60
80
100
RG G Gate Resistance (Ohm) R , , Gate Resistance ()
0.1 -60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( C )
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Junction Temperature
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IRG4BC10SD
15
Total Switching Losses (mJ)
9
I C , Collector Current (A)
RG TJ VCC 12 VGE
= 100 100 = 150 C = 480V = 15V
100
VGE = 20V T J = 125 oC
10
6
3
0
0
4
8
12
16
20
1
SAFE OPERATING AREA
1 10 100 1000
I C , Collector Current (A)
VCE , Collector-to-Emitter Voltage (V)
Fig. 11 - Typical Switching Losses vs. Collector Current
100
Fig. 12 - Turn-Off SOA
Instantaneous Forward Current ( A )
10
TJ = 150C T = 125C
J J
T = 25C
1
0.1 0.0 1.0 2.0 3.0 4.0 5.0 6.0
6
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
(V) Forward Voltage Drop -- V FM ( V ) Voltage Drop V FM
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IRG4BC10SD
50 14 VR = 200V TJ = 125C TJ = 25C 45
I F = 8.0A I F = 4.0A
12
10 40
I F = 8.0A I F = 4.0A
trr- (nC)
35
Irr- ( A)
8
6 30 4
25 VR = 200V TJ = 125C TJ = 25C 20 100
2
di f /dt - (A/s)
1000
0 100
di f /dt - (A/s)
1000
Fig. 14 - Typical Reverse Recovery vs. dif/dt
200 VR = 200V TJ = 125C TJ = 25C 160
Fig. 15 - Typical Recovery Current vs. dif/dt
1000 VR = 200V TJ = 125C TJ = 25C
I F = 8.0A
I F = 8.0A
di (rec) M/dt- (A /s)
120
I F = 4.0A
I F = 4.0A
Qrr- (nC)
80 40
0 100
di f /dt - (A/s)
1000
100 100
A
di f /dt - (A/s)
1000
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt,
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IRG4BC10SD
Same type device as D.U.T.
80% of Vce
430F D.U.T.
Vge
V C 90%
10% 90%
td(off)
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
10% IC 5%
t d(on)
tr
tf t=5s Eoff Ets = (E +Eoff ) on
Eon
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
GATE VOLTAGE D.U.T. 10% +Vg +Vg
Ic
trr
Qrr =
Ic dt
Vcc
trr id dt tx
tx 10% Vcc Vce Vcc 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk
10% Irr
Vpk
Irr
Ic DIODE RECOVERY WAVEFORMS
td(on)
tr
5% Vce t2 Vce Ic Eon = Vce ie dt dt t1 t2 DIODE REVERSE RECOVERY ENERGY t3
t4 Erec = Vd idIc dt Vd dt t3
t1
t4
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
8
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IRG4BC10SD
Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
L 1000V 50V 6000F 100V Vc*
D.U.T.
RL = 0 - 480V
480V 4 X I C @25C
Figure 19. Clamped Inductive Load Test Circuit
Figure 20. Pulsed Collector Current Test Circuit
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IRG4BC10SD
Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) VCC=80%(VCES), VGE=20V, L=10H, RG = 100W (figure 19) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot.
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
@Y 6HQG@) UCDTADTA6 IADSA G PUA8P9@A A DIU@SI6UDPI6G (A! S@8UDAD@S GPBP 96U@A8P9@ Ir)AAQAAvAhr iyAyvr A vv vq vph r AAGrh qAAArr A @6SA A2 A! X@@F A GDI@A8 ( Q6 SU AIVH7@S &'( 6 TT@H 7G@9APIAXX A DIAU C@A6 TT@H 7GAG DI@AA8A
6 TT@H 7G G PUA8P9@
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/2007
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