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| CGY41 HiRel L- and S-Band GaAs General Purpose Amplifier * HiRel Discrete and Microwave Semiconductor * Single-stage monolithic microwave IC (MMIC-amplifier ) * Application range: 100 MHz to 3 GHz * Gain: 9.5 dB typ. @ 1.8 GHz * Low noise figure: 2.7 dB typ. @ 1.8 GHz * Bandwidth: 3 GHz typ. @ -3 dB, VSWR < 2 : 1 * Operating voltage range: 3 to 5.5 V * Input and output matched to 50 * Individual current control with neg. gate bias * Hermetically sealed ceramic package micro-x ESD: Electrostatic discharge sensitive device, observe handling precautions! 4 3 1 2 Type Marking Ordering Code Circuit Diagram (Pin Configuration) Package CGY41 (ql) - see below Micro-X (ql) Quality Level: P: Professional Quality, H: High Rel Quality, S: Space Quality, ES: ESA Space Quality, Ordering Code: Ordering Code: Ordering Code: Ordering Code: on request on request on request on request (see order instructions for ordering example) Semiconductor Group 1 of 7 Target DATASHEET CGY41 Maximum ratings Drain-voltage Gate-voltage Drain-gate voltage RF Input power 1) Symbol VD VG VDG PRFIN TCh Tstg 2) Value 5.5 -4 ... 0 9.5 16 175 -55...+175 440 Unit V V V dBm C C mW Channel temperature Storage temperature range Total power dissipation (TS < 82C) Thermal resistance Channel-soldering point 2) Ptot RthChS 155 K/W Notes: Exceeding any of the max. ratings may cause permanent damage to the device. Appropriate handling is required to protect the electrostatic sensitive MMIC against degradation due to excess voltage or current spikes. Proper ground connection of leads 2 and 4 ( with min. inductance ) is required to achieve the guaranteed RF performance, stable operating conditions and adequate cooling. 1) @ VD > 4.5 V derating required. 2) Ts is measured on the source lead at the soldering point to the PCB. Semiconductor Group 2 of 7 Target DATASHEET CGY41 Electrical Characteristics TA = 25 C, VG = 0 V, VD = 4.5 V, RS = RL = 50 ,==unless otherwise specified (for application circuit see next page) Characteristics Drain current Power gain f = 200 MHz f = 1800 MHz Gain flatness f = 200 to 1000 MHz f = 800 to 1800 MHz Noise figure f = 200 to 1000 MHz f = 800 to 1800 MHz Input return loss f = 200 to 1000 MHz f = 800 to 1800 MHz Output return loss f = 200 to 1000 MHz f = 800 to 1800 MHz Third order intercept point Two tone intermodulation test f1 = 806 MHz, f2 = 810 MHz P0 = 10 dBm ( both carriers ) 1dB gain compression f = 200 to 1800 MHz Gain control dynamic range, (per gate control voltage) f = 200 to 1000 MHz f = 800 to 1800 MHz 30 20 P1 dB dBm 18 dB 31 32 IP3 RLOUT 12 12 9.5 dBm RLIN 13 12 9.5 dB Symbol ID G 9.5 8.5 10.5 9.5 0.4 1.1 12 11 dB 2 dB 2.5 2.7 4.0 dB min 40 typ 60 max 80 Unit mA dB G F G Semiconductor Group 3 of 7 Target DATASHEET CGY41 Application Circuit ( f = 800 to 1800 MHz ) V V G C 3 L Input 50Ohm C1 L 1 4 2 2 3 D D L 3 C 1 2 C 4 Output 50Ohm CGY41 50 Ohm Microstripline Legend of components C1 , C2 C3 , C4 L1 L2, L3 D Chip capacitors 100 pF Chip capacitors 1 nF For optimized input matching - discrete inductor: approx. 3nH, or - printed microstripline inductor: Z approx. 100 , le approx. 5 mm - discrete inductor: approx. 40 nH, as e.g. 5 turns 0.25 mm copper wire on nylon rod with M3-thread, or - printed microstripline inductor Z diode 5.6 V ( type BZW 22 C5 V 6 ) Semiconductor Group 4 of 7 Target DATASHEET CGY41 Total Power Dissipation Ptot = f (TS;TA) 500 P tot [ mW ] 400 TS 300 200 TA 100 0 0 150 50 100 TA ; TS [ C ] Semiconductor Group 5 of 7 Target DATASHEET CGY41 Order Instructions: Full type variant including quality level must be specified by the orderer. For HiRel Discrete and Microwave Semiconductors the ordering code specifies device family and quality level only. Ordering Form: Ordering Code: Q.......... CGY41 (ql) (ql): Quality Level Ordering Example: tbd Further Informations: See our WWW-Pages: - Discrete and RF-Semiconductors (Small Signal Semiconductors) www.infineon.com/products/discrete/hirel.htm - HiRel Discrete and Microwave Semiconductors www.infineon.com/products/discrete/hirel.htm Please contact also our marketing division : Tel.: Fax.: e-mail: Address: ++89 234 24480 ++89 234 28438 martin.wimmers@infineon.com Infineon Technologies Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich Semiconductor Group 6 of 7 Target DATASHEET CGY41 Micro-X Package Published by Infineon Technologies Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich. Infineon Technologies AG 1998. All Rights Reserved. As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in Germany or the Infineon Technologies Companies and Representatives woldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Infineon Technologies Office, Semiconductor Group. Infineon Technologies Semiconductors is a certified CECC and QS9000 manufacturer (this includes ISO 9000). Semiconductor Group 7 of 7 Target DATASHEET |
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