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AM0912-300
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
.REFRACTORY/ .EMI .15: .LOW .I .OVERLAY .METAL/ .P .BANDWI
DESCRIPTION
G OLD METALLIZATION T TER SITE BALLASTED 1 VSWR CAPABILITY THERMAL RESISTANCE NPUT/OUTPUT MATCHING GEOMETRY C ERAMIC HERMETIC PACKAGE OUT = 300 W MIN. WITH 7.0 dB GAIN D TH 255 MHz
.400 x .500 2LFL (S038) hermetically sealed ORDER CODE AM0912-300 BRANDING 0912-300
The AM0912-300 avionics power transistor is a broadband, high peak pulse power device specifically designed for avionics applications requiring broad bandwidth with moderate duty cycle and pulse width constraints such as ground/ship based DME/TACAN. The AM0912-300 is also designed for specialized applications where reduced power is provided under pulse formats utilizing short pulse widths and high burst or overall duty cycles. This device is capable of withstanding 15:1 VSWR mismatch load condition at any phase angle under full rated conditions. The AM0912-300 is housed in the unique BIGPACTM Hermetic Metal/Ceramic package with internal Input/Output matching structures. ABSOLUTE MAXIMUM RATINGS (T case = 25 C)
Symbol Parameter
PIN CONNECTION
1. Collector 2. Base
3. Emitter 4. Base
Value
Unit
PDISS IC VCC TJ T STG
Power Dissipation* Device Current*
(TC 100C)
940 24 50 250 - 65 to +200
W A V C C
Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 0.16 C/W
*Applies only to rated RF amplifier operation
September 1992
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AM0912-300
ELECTRICAL SPECIFICATIONS (T case = 25 C) STATIC
Symbol Test Conditions Valu e Min. Typ. Max. Unit
BVCBO BVEBO BVCER ICES hFE DYNAMIC
Symbol
IC = 50mA IE = 15mA IC = 50mA VCE = 50V VCE = 5V
IE = 0mA IC = 0mA RBE = 10 IC = 5A
65 3.0 65 -- 10
80 -- -- -- --
-- -- -- 30 --
V V V mA --
Test Conditions
Value Min. Typ. Max.
Unit
POUT c GP
Note:
f = 960 -- 1215MHz f = 960 -- 1215MHz f = 960 -- 1215MHz = =
10Sec 10%
PIN = 60W PIN = 60W PIN = 60W
VCC = 50V VCC = 50V VCC = 50V
300 38 7.0
330 45 7.4
-- -- --
W % dB
Pul se Widt h Duty Cycle
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AM0912-300
TYPICAL PERFORMANCE
TYPICAL BROADBAND RESPONSE
TYPICAL POWER OUTPUT vs POWER INPUT
Conditions: PW = 10 s, 10% VCC = 50 V
MAXIMUM THERMAL RESISTANCE vs PULSE WIDTH & DUTY CYCLE
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AM0912-300
IMPEDANCE DATA
TYPICAL INPUT IMPEDANCE
ZIN
PIN = 60 W VCC = 50 V Z O = 50 ohms
FREQ. L = 960 MHz M = 1090 MHz H = 1215 MHz
ZIN () 2.0 + j 3.6 3.5 + j 1.7 1.6 + j 0.5
ZCL () 1.7 - j 2.2 2.0 - j 1.7 1.8 - j 2.0
TYPICAL COLLECTOR LOAD IMPEDANCE
ZCL
PIN = 60 W VCC = 50 V ZO = 50 ohms
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AM0912-300
TEST CIRCUIT
.200
.130
.100 .190
Ref. Dwg. No. C125519 .125
PACKAGE MECHANICAL DATA
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AM0912-300
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
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