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| 1SS400 Diodes Switching diode 1SS400 !Applications High speed switching !External dimensions (Units : mm) CATHODE MARK !Features 1) Extremely small surface mounting type.(EMD2) 2) High Speed.(trr=1.2ns Typ.) 3) High reliability. 1.60.1 1.20.05 A 0.120.05 0.30.05 0.80.05 0.60.1 !Construction Silicon epitaxial planar ROHM : EMD2 EIAJ : SC - 79 JEDEC : SOD - 523 !Absolute maximum ratings (Ta = 25C) Parameter Peak reverse voltage DC reverse voltage Peak forward current Mean rectifying current Surge current (1s) Junction temperature Storage temperature Symbol VRM VR IFM IO Isurge Tj Tstg Limits 90 80 225 100 500 125 -55 ~ +125 Unit V V mA mA mA C C !Electrical characteristics (Ta = 25C) Parameter Forward voltage Reverse current Capacitance between terminals Reverse recovery time Symbol VF IR CT trr Min. - - - - Typ. - - 0.72 - Max. 1.2 0.1 3.0 4 Unit V A pF ns IF=100mA VR=80V VR=0.5V , f=1MHz VR=6V , IF=10mA , RL=100 Conditions 1SS400 Diodes !Electrical characteristic curves (Ta = 25C) 1 1m 0.1m 10 1 100n 10n 1n 0 Ta=125C CAPACITANCE BETWEEN TERMINALS : CT (pF) 10 5 FORWARD CURRENT : IF (A) 100m REVERSE CURRENT : IR (A) 2 1 0.5 10m Ta=75C 1m Ta= 125 C Ta= 75 C Ta= 25C Ta= -25 C Ta=25C 100 0.2 0.1 0 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 20 40 60 80 100 120 2 4 6 8 10 12 14 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig.1 Forward characteristics Fig.2 Reverse characteristics Fig.3 Capacitance between terminals 3 REVERSE RECOVERY TIME : trr (ns) 100 SURGE CURRENT : Isurge (A) VR=6V Irr=1/10IR 2 50 PULSE Single pulse 20 10 5 1 2 1 0.1 0 0 10 20 30 1 10 100 1 000 10 000 FORWARD CURRENT : IF (mA) PULSE WIDTH : Tw (ms) Fig.4 Reverse recovery time characteristics Fig.5 Surge current characteristics 0.01F D.U.T. 5k PULSE GENERATOR OUTPUT 50 50 SAMPLING OSCILLOSCOPE Fig.6 Reverse recovery time (trr) measurement circuit This datasheet has been download from: www..com Datasheets for electronics components. |
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