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| SEMICONDUCTOR TECHNICAL DATA CATV TUNING. FEATURES High Capacitance Ratio : C2V/C25V=12.5(Typ.) Low Series Resistance : rS=0.6 (Typ.) Excellent C-V Characteristics, and Small Tracking Error. Useful for Small Size Tuner. KDV262 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK B 1 K G A H F 2 D E J C I MAXIMUM RATING (Ta=25 CHARACTERISTIC Reverse Voltage Peak Reverse Voltage Junction Temperature Storage Temperature Range ) SYMBOL VR VRM Tj Tstg RATING 34 36 (RL=10k ) 125 -55 125 UNIT V V M M DIM A B C D E F G H I J K L M MILLIMETERS _ 2.50 + 0.1 _ 1.25 + 0.05 _ 0.90 + 0.05 0.30+0.06/-0.04 _ 1.70 + 0.05 MIN 0.17 _ 0.126 + 0.03 0~0.1 1.0 MAX _ 0.15 + 0.05 _ 0.4 + 0.05 2 +4/-2 4~6 1. ANODE 2. CATHODE USC ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Reverse Voltage Reverse Current Capacitance Capacitance Capacitance Ratio Series Resistance C(Max.)-C(Min.) C(Min.) (VR=2~25V) SYMBOL VR IR C2V C25V C2V/C25V C25V/C28V rS VR=5V, f=470MHz IR=1 A VR=28V VR=2V, f=1MHz VR=25V, f=1MHz TEST CONDITION MIN. 34 33 2.6 12.0 1.03 TYP. 35.5 2.85 12.5 0.6 MAX. 10 38 3.0 0.8 UNIT V nA pF pF - Note : Available in matched group for capacitance to 2.0%. 0.02 Marking Type Name UQ 2001. 6. 11 Revision No : 1 L 1/2 KDV262 C V - VR 500 REVERSE CURRENT I R (A) f=1MHz Ta=25 C I R - VR 1000p Ta=7 5C 0C CAPACITANCE CV (pF) 100p Ta=5 100 50 10p Ta= 25 C 1p 10 0 10 20 30 REVERSE VOLTAGE V R (V) 0.1p 0 8 16 24 32 REVERSE VOLTAGE VR (V) r s - VR 1.0 SERIES RESISTANCE rs () 0.8 0.6 0.4 0.2 0 1 3 5 10 30 f=470MHz Ta=25 C rs - f 1.0 SERIES RESISTANCE r s () 0.8 0.6 0.4 0.2 0 50 100 FREQUENCY f (MHz) 300 500 VR=5V Ta=25 C REVERSE VOLTAGE VR (V) C - Ta C (%) 3 2 1 0 -1 -2 -40 -20 0 20 40 60 80 f=1MHz VR =2V 10V 20V CAPACITANCE CHANGE RATIO 25V AMBIENT TEMPERATURE Ta ( C) 2001. 6. 11 Revision No : 1 2/2 |
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