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TECHNICAL DATA PNP DUAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/496 Devices 2N5795 2N5796 2N5796U Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC @ TA = +250C Value 60 60 5.0 600 Units Vdc Vdc Vdc mAdc TO-78* One Total Power Dissipation PT TJ, Tstg (1) Section 0.5 Both Sections 0.6 (2) W 0 Operating & Storage Junction Temperature Range 1) Derate linearly 2.86 mW/0C for TA +250C 2) Derate linearly 3.43 mW/0C for TA +250C -65 to +175 C 6 PIN SURFACE MOUNT* *See MILPRF19500/496 for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol V(BR)CEO ICBO Min. 60 Max. Unit Vdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10 mAdc Collector-Base Cutoff Current VCB = 50 Vdc VCBO = 60 Vdc Emitter-Base Cutoff Current VEB = 3.0 Vdc VEB = 5.0 Vdc 10 10 100 10 Adc Adc Adc Adc IEBO 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 42203 Page 1 of 2 2N5795, 2N5796 JAN SERIES ELECTRICAL CHARACTERISTICS (con't) Characteristics Symbol Min. Max. Unit ON CHARACTERISTICS (1) Forward-Current Transfer Ratio IC = 100 Adc, VCE = 10 Vdc IC = 1.0 mAdc, VCE = 10 Vdc IC = 10 mAdc, VCE = 10 Vdc IC = 150 mAdc, VCE = 10 Vdc IC = 300 mAdc, VCE = 10 Vdc IC = 150 mAdc, VCE = 1.0 Vdc IC = 100 Adc, VCE = 10 Vdc IC = 1.0 mAdc, VCE = 10 Vdc IC = 10 mAdc, VCE = 10 Vdc IC = 150 mAdc, VCE = 10 Vdc IC = 300 mAdc, VCE = 10 Vdc IC = 150 mAdc, VCE = 1.0 Vdc Collector-Emitter Saturation Voltage IC = 150 mAdc, IB = 15 mAdc IC = 500 mAdc, IB = 50 mAdc Base-Emitter Saturation Voltage IC = 150 mAdc, IB = 15 mAdc IC = 500 mAdc, IB = 50 mAdc 2N5795 hFE 40 40 40 40 20 20 75 100 100 100 50 50 150 2N5796 2N5796U hFE 300 VCE(sat) 0.4 1.6 1.3 2.6 2.0 10 8.0 25 Vdc VBE(sat) Vdc DYNAMIC CHARACTERISTICS Magnitude of Small-Signal Forward Current Transfer Ratio IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz Input Capacitance VEB = 2.0 Vdc, IC = 0, 100 kHz f 1.0 MHz hfe Cobo Cibo t t pF pF SWITCHING CHARACTERISTICS Turn-On Time VCC = 30 Vdc; IC = 150 mAdc; IB1= 15 mAdc Turn-Off Time VCC = 30 Vdc; IC = 150 mAdc; IB1 = IB2 = 15 mAdc 1) Pulse Test: Pulse Width = 300s, Duty Cycle 2.0%. on 50 140 s s off 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 42203 Page 2 of 2 This datasheet has been download from: www..com Datasheets for electronics components. |
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