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DS5001FP 128k Soft Microprocessor Chip
www.maxim-ic.com
FEATURES
8051-compatible microprocessor adapts to its task - Accesses up to 128kB of nonvolatile SRAM - In-system programming through on-chip serial port - Can modify its own program or data memory - Accesses memory on a separate byte-wide bus - Performs CRC-16 check of NV RAM memory - Decodes memory and peripheral chip enables High-reliability operation - Maintains all nonvolatile resources for over 10 years - Power-fail reset - Early warning power-fail interrupt - Watchdog timer - Lithium backs user SRAM for program/data storage - Precision bandgap reference for power monitor Fully 8051-compatible - 128kB scratchpad RAM - Two timer/counters - On-chip serial port - 32 parallel I/O port pins Software security available with DS5002FP secure microprocessor
PIN ASSIGNMENT (Top View)
BA11 P0.5/AD5 PE1 P0.6/AD6 BA10 P0.7/AD7 CE1 NC CE1N BD7 ALE BD6 PSEN BD5 P2.7/A15 BD4
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65
P0.4AD4 CE2 PE2 BA9 P0.3/AD3 BA8 P0.2/AD2 BA13 P0.1/AD1 R/W P0.0/AD0 VCC0 VCC MSEL P1.0 BA14 P1.1 BA12 P1.2 BA7 P1.3 PE3 PE4 BA6
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
DS5001FP
64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41
P2.6/A14 CE3 CE4 BD3 P2.5/A13 BD2 P2.4/A12 BD1 P2.3/A11 BD0 VLI BA15 GND P2.2/A10 P2.1/A9 P2.0/A8 XTAL1 XTAL2 P3.7/RD P3.6/WR P3.5/TI PF VRST P3.4/T0
25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40
Note: Some revisions of this device may incorporate deviations from published specifications known as errata. Multiple revisions of any device may be simultaneously available through various sales channels. For information about device errata, click here: http://www.maxim-ic.com/errata. 1 of 26 052302
P1.4 BA5 P1.5 BA4 P1.6 BA3 P1.7 PROG BA2 RST BA1 P3.0/RXD BA0 P3.1/TXD P3.2/INT0 P3.3/INT1
80-Pin MQFP
44-Pin MQFP
DS5001FP
DESCRIPTION
The DS5001FP 128k soft microprocessor chip is an 8051-compatible microprocessor based on NV RAM technology and designed for systems that need large quantities of nonvolatile memory. It provides full compatibility with the 8051 instruction set, timers, serial port, and parallel I/O ports. By using NV RAM instead of ROM, the user can program and then reprogram the microprocessor while in-system. The application software can even change its own operation, which allows frequent software upgrades, adaptive programs, customized systems, etc. In addition, by using NV SRAM, the DS5001FP is ideal for data logging applications. It also connects easily to a Dallas real-time clock. The DS5001FP provides the benefits of NV RAM without using I/O resources. It uses a nonmultiplexed byte-wide address and data bus for memory access. This bus performs all memory access and provides decoded chip enables for SRAM, which leaves the 32 I/O port pins free for application use. The DS5001FP uses ordinary SRAM and battery-backs the memory contents for over 10 years at room temperature with a small external battery. A DS5001FP also provides high-reliability operation in harsh environments. These features include the ability to save the operating state, power-fail reset, power-fail interrupt, and watchdog timer. A user programs the DS5001FP through its on-chip serial bootstrap loader. The bootstrap loader supervises the loading of software into NV RAM, validates it, and then becomes transparent to the user. Software can be stored in multiple 32kB or one 128kB CMOS SRAM(s). Using its internal partitioning, the DS5001FP can divide a common RAM into user-selectable program and data segments. This partition can be selected at program loading time, but can then be modified later at any time. The microprocessor decodes memory access to the SRAM and addresses memory through its byte-wide bus. Memory portions designated code or ROM are automatically write-protected by the microprocessor. Combining program and data storage in one device saves board space and cost. The DS5001FP offers several bank switches for access to even more memory. In addition to the primary data area of 64kB, a peripheral selector creates a second 64kB data space with four accompanying chip enables. This area can be used for memory-mapped peripherals or more data storage. The DS5001FP can also use its expanded bus on ports 0 and 2 (like an 8051) to access an additional 64kB of data space. Lastly, the DS5001FP provides one additional bank switch that changes up to 60kB of the NV RAM program space into data memory. Thus, with a small amount of logic, the DS5001 accesses up to 252kB of data memory. The DS2251T is available (Refer to the data sheet at www.maxim-ic.com/microcontrollers.) for users who want a preconstructed module using the DS5001FP, RAM, lithium cell, and a real-time clock. For more details, refer to the Secure Microcontroller User's Guide. For users desiring software security, the DS5002FP is functionally identical to the DS5001FP but provides superior firmware security. The 44-pin version of the device is functionally identical to the 80-pin version but sports a reduced pin count and footprint. Refer to the Secure Microcontroller User's Guide for operating details. This data sheet provides ordering information, pinout, and electrical specifications.
ORDERING INFORMATION
PART DS5001FP-16 DS5001FP-16N DS5001FP-12-44 PIN-PACKAGE 80-MQFP 80-MQFP 44-MQFP MAX. CLOCK SPEED (MHz) 16 16 12
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TEMP. RANGE (C) 0 to +70 -40 to +85 0 to +70
DS5001FP
Figure 1. BLOCK DIAGRAM
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DS5001FP
PIN DESCRIPTION
80-PIN MQFP 11, 9, 7, 5, 1, 79, 77, 75 15, 17, 19, 21, 25, 27, 29, 31 49, 50, 51, 56, 58, 60, 64, 66 36 38 39 40 41 44 45 46 44-PIN MQFP 31 (P0.5) 44 (P1.3) SIGNAL P0.0-P0.7 DESCRIPTION General-Purpose I/O Port 0. This port is open-drain and cannot drive a logic 1. It requires external pullups. Port 0 is also the multiplexed expanded address/data bus. When used in this mode, it does not require pullups. General-Purpose I/O Port 1
P1.0-P1.7
N/A
P2.0-P2.7
General-Purpose I/O Port 2. Also serves as the MSB of the address in expanded memory accesses, and as pins of the RPC mode when used. General-Purpose I/O Port Pin 3.0. Also serves as the receive signal for the on board UART. This pin should not be connected directly to a PC COM port. General-Purpose I/O Port Pin 3.1. Also serves as the transmit signal for the on board UART. This pin should not be connected directly to a PC COM port. General-Purpose I/O Port Pin 3.2. Also serves as the active-low external interrupt 0. General-Purpose I/O Port Pin 3.3. Also serves as the active-low external interrupt 1. General-Purpose I/O Port Pin 3.4. Also serves as the timer 0 input. General-Purpose I/O Port Pin 3.5. Also serves as the timer 1 input. General-Purpose I/O Port Pin. Also serves as the write strobe for expanded bus operation. General-Purpose I/O Port Pin. Also serves as the read strobe for expanded bus operation. Program Store Enable. This active-low signal is used to enable an external program memory when using the expanded bus. It is normally an output and should be unconnected if not used. PSEN also is used to invoke the bootstrap loader. At this time, PSEN is pulled down externally. This should only be done once the DS5001FP is already in a reset state. The device that pulls down should be open drain since it must not interfere with PSEN under normal operation. Active-High Reset Input. A logic 1 applied to this pin will activate a reset state. This pin is pulled down internally so this pin can be left unconnected if not used. An RC power-on reset circuit is not needed and is not recommended. Address Latch Enable. Used to demultiplex the multiplexed expanded address/data bus on port 0. This pin is normally connected to the clock input on a '373 type transparent latch. XTAL2, XTAL1. Used to connect an external crystal to the internal oscillator. XTAL1 is the input to an inverting amplifier and XTAL2 is the output. Logic Ground VCC - +5V VCCO - VCC Output. This is switched between VCC and VLI by internal circuits based on the level of VCC. When power is above the lithium input, power will be drawn from VCC. The lithium cell remains isolated from a load. When VCC is below VLI, the VCCO switches to the VLI source. VCCO should be connected to the VCC pin of an SRAM. Lithium Voltage Input. Connect to a lithium cell greater than VLIMIN and no greater than VLImax as shown in the electrical specifications. Nominal value is +3V. Byte-Wide Address-Bus Bits 14-0. This bus is combined with the nonmultiplexed data bus (BD7-0) to access NV SRAM. Decoding is performed using CE1 through CE4 . Therefore, BA15 is not actually needed. Read/write access is controlled by R/ W . BA14-0 connect directly to an 8k, 32k, or 128k SRAM. If an 8k RAM is used, BA13 and BA14 are unconnected. If a 128k SRAM is used, the micro converts CE2 and CE3 to serve as A16 4 of 26
8 10 N/A 11 N/A 12 13 N/A
P3.0 RXD P3.1 TXD P3.2
INT0
P3.3 INT1 P3.4 T0 P3.5 T1 P3.6
WR
P3.7 RD
68
25
PSEN
34 70 47, 48 52 13 12
6 27 14, 15 16 39 38
RST ALE XTAL2, XTAL1 GND VCC VCCO
54 53, 16, 8, 18, 80, 76, 4, 6, 20, 24, 26, 28, 30,
17 41, 36, 42, 32, 30, 34, 35, 43, 1, 2, 3, 4, 5, 7,
VLI
BA14-0
DS5001FP 33, 35, 37 71, 69, 67, 65, 61, 59, 57, 55 10 9 28, 26, 24, 23, 21, 20, 19, 18 37 and A15 respectively. Byte-Wide Data-Bus Bits 7-0. This 8-bit, bidirectional bus is combined with the nonmultiplexed address bus (BA14-0) to access NV SRAM. Decoding is performed on CE1 and CE2 . Read/write access is controlled by R/ W . BD7-0 connect directly to an SRAM, and optionally to a real-time clock or other peripheral. Read/Write. This signal provides the write enable to the SRAMs on the byte-wide bus. It is controlled by the memory map and partition. The blocks selected as program (ROM) are write-protected. Chip Enable 1. This is the primary decoded chip enable for memory access on the bytewide bus. It connects to the chip enable input of one SRAM. CE1 is lithium-backed. It remains in a logic high inactive state when VCC falls below VLI. Non-battery-backed version of chip enable 1. This can be used with a 32kB EPROM. It should not be used with a battery-backed chip. Chip Enable 2. This chip enable is provided to access a second 32k block of memory. It connects to the chip enable input of one SRAM. When MSEL = 0, the micro converts CE2 into A16 for a 128k x 8 SRAM. CE2 is lithium-backed and remains at a logic high when VCC falls below VLI. Chip Enable 3. This chip enable is provided to access a third 32k block of memory. It connects to the chip enable input of one SRAM. When MSEL = 0, the micro converts CE3 into A15 for a 128k x 8 SRAM. CE3 is lithium-backed and remains at a logic high when VCC falls below VLI. Chip Enable 4. This chip enable is provided to access a fourth 32k block of memory. It connects to the chip-enable input of one SRAM. When MSEL = 0, this signal is unused. CE4 is lithium-backed and remains at a logic high when VCC < VLI. Peripheral Enable 1. Accesses data memory between addresses 0000h and 3FFFh when the PES bit is set to a logic 1. Commonly used to chip enable a byte-wide real-time clock such as the DS1283. PE1 is lithium-backed and remains at a logic high when VCC falls below VLI. Connect PE1 to battery-backed functions only. Peripheral Enable 2. Accesses data memory between addresses 4000h and 7FFFh when the PES bit is set to a logic 1. PE2 is lithium-backed and remains at a logic high when VCC falls below VLI. Connect PE2 to battery-backed functions only. Peripheral Enable 3. Accesses data memory between addresses 8000h and BFFFh when the PES bit is set to a logic 1. PE3 is not lithium-backed and can be connected to any type of peripheral function. If connected to a battery-backed chip, it needs additional circuitry to maintain the chip enable in an inactive state when VCC < VLI. Peripheral Enable 4. Accesses data memory between addresses C000h and FFFFh when the PES bit is set to a logic 1. PE4 is not lithium-backed and can be connected to any type of peripheral function. If connected to a battery-backed chip, it needs additional circuitry to maintain the chip enable in an inactive state when VCC < VLI. Invokes the bootstrap loader on a falling edge. This signal should be debounced so that only one edge is detected. If connected to ground, the micro enters bootstrap loading on power-up. This signal is pulled up internally. This I/O pin (open drain with internal pullup) indicates that the power supply (VCC) has fallen below the VCCmin level and the micro is in a reset state. When this occurs, the DS5001FP drives this pin to a logic 0. Because the micro is lithium-backed, this signal is guaranteed even when VCC = 0V. Because it is an I/O pin, it also forces a reset if pulled low externally. This allows multiple parts to synchronize their power-down resets. This output goes to a logic 0 to indicate that VCC < VLI and the micro has switched to lithium backup. Because the micro is lithium-backed, this signal is guaranteed even when VCC = 0V. The normal application of this signal is to control lithium powered current to isolate battery-backed functions from non-battery-backed functions. Memory Select. This signal controls the memory size selection. When MSEL = +5V, the DS5001FP expects to use 32k x 8 SRAMs. When MSEL = 0V, the DS5001FP expects to use a 128k x 8 SRAM. MSEL must be connected regardless of partition, mode, etc. No Connect.
BD7-0
R/ W
74 72
29 N/A
CE1
CE1N
2
33
CE2
63
22
CE3
62
N/A
CE4
78
N/A
PE1
3
N/A
PE2
22
N/A
PE3
23
N/A
PE4
32
N/A
PROG
42
N/A
VRST
43
N/A
PF
14 73
40
MSEL NC
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DS5001FP
INSTRUCTION SET
The DS5001FP executes an instruction set that is object code-compatible with the industry standard 8051 microcontroller. As a result, software development packages such as assemblers and compilers that have been written for the 8051 are compatible with the DS5001FP. A complete description of the instruction set and operation are provided in the Secure Microcontroller User's Guide. Also note that the DS5001FP is embodied in the DS2251T module. The DS2251T combines the DS5001FP with between 32k and 128k of SRAM, a lithium cell, and a real-time clock. This is packaged in a 72-pin SIMM module.
MEMORY ORGANIZATION
Figure 2 illustrates the memory map accessed by the DS5001FP. The entire 64k of program and 64k of data are potentially available to the byte-wide bus. This preserves the I/O ports for application use. The user controls the portion of memory that is actually mapped to the byte-wide bus by selecting the program range and data range. Any area not mapped into the NV RAM is reached by the expanded bus on ports 0 and 2. An alternate configuration allows dynamic partitioning of a 64k space as shown in Figure 3. Selecting PES=1 provides another 64k of potential data storage or memory-mapped peripheral space as shown in Figure 4. These selections are made using special function registers. The memory map and its controls are covered in detail in the Secure Microcontroller User's Guide.
Figure 2. MEMORY MAP IN NONPARTITIONABLE MODE (PM = 1)
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DS5001FP
Figure 3. MEMORY MAP IN PARTITIONABLE MODE (PM = 0)
Note: Partitionable mode is not supported when MSEL pin = 0 (128kB mode).
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DS5001FP
Figure 4. MEMORY MAP WITH PES = 1
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DS5001FP
Figure 5 illustrates a typical memory connection for a system using a 128kB SRAM. Note that in this configuration, both program and data are stored in a common RAM chip Figure 6 shows a similar system with using two 32kB SRAMs. The byte-wide address bus connects to the SRAM address lines. The bidirectional byte-wide data bus connects the data I/O lines of the SRAM.
Figure 5. CONNECTION TO 128k x 8 SRAM
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DS5001FP
Figure 6. DS5001FP CONNECTION TO 64k x 8 SRAM
POWER MANAGEMENT
The DS5001FP monitors VCC to provide power-fail reset, early warning power-fail interrupt, and switch over to lithium backup. It uses an internal bandgap reference in determining the switch points. These are called VPFW, VCCMIN, and VLI, respectively. When VCC drops below VPFW, the DS5001FP performs an interrupt vector to location 2Bh if the power-fail warning was enabled. Full processor operation continues regardless. When power falls further to VCCMIN, the DS5001FP invokes a reset state. No further code execution is performed unless power rises back above VCCMIN. All decoded chip enables and the R/ W signal go to an inactive (logic 1) state. VCC is still the power source at this time. When VCC drops further to below VLI, internal circuitry switches to the lithium cell for power. The majority of internal circuits are disabled and the remaining nonvolatile states are retained. Any devices connected VCCO are powered by the lithium cell at this time. VCCO is at the lithium battery voltage minus approximately 0.45V. This drop varies depending on the load. Low power SRAMs should be used for this reason. When using the DS5001FP, the user must select the appropriate battery to match the RAM data retention current and the desired backup lifetime. Note that the lithium cell is only loaded when VCC < VLI. The User's Guide has more information on this topic. The trip points VCCMIN and VPFW are listed in Electrical Specifications.
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DS5001FP
ABSOLUTE MAXIMUM RATINGS*
Voltage Range on Any Pin Relative to Ground Voltage Range on VCC Related to Ground Operating Temperature Range Storage Temperature Range1 Soldering Temperature
*
-0.3V to (VCC + 0.5V) -0.3 C to 6.0C -40C to +85C -55C to +125C See IPC/JEDEC J-STD-020A
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability. Storage temperature is defined as the temperature of the device when VCC = 0V and VLI = 0V. In this state, the contents of SRAM are not battery-backed and are undefined.
1
DC CHARACTERISTICS
PARAMETER Input Low Voltage Input High Voltage Input High Voltage (RST, XTAL1, PROG ) Output Low Voltage at IOL = 1.6mA (Ports 1, 2, 3, PF ) Output Low Voltage at IOL = 3.2mA (Ports 0, ALE, PSEN , BA15-0, BD7-0, R/ W , CE1N , CE 1-4, PE 1-4, VRST) Output High Voltage at IOH = -80A (Ports 1, 2, 3) Output High Voltage at IOH = -400A (Ports 0, ALE, PSEN , PF , BA15-0, BD7-0, R/ W , CE1N , CE 1-4, PE 1-4, VRST) Input Low Current VIN = 0.45V (Ports 1, 2, 3) Transition Current; 1 to 0 VIN = 2.0V (Ports 1, 2, 3) (0C to +70C) Transition Current; 1 to 0 VIN = 2.0V (Ports 1, 2, 3) (-40C to +85C) SYMBOL VIL VIH1 VIH2 VOL1
(TA = 0C to +70C; VCC = 5V 10%)
MIN -0.3 2.0 3.5 0.15 TYP MAX +0.8 VCC + 0.3 VCC + 0.3 0.45 UNITS V V V V NOTES 1 1 1 1, 11
VOL2
0.15
0.45
V
1
VOH1
2.4
4.8
V
1
VOH2
2.4
4.8
V
1
IIL ITL ITL
-50 -500 -600
A A A 10
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DS5001FP
DC CHARACTERISTICS (continued)
PARAMETER Input Leakage Current 0.45 < VIN < VCC (Port 0, MSEL) RST Pulldown Resistor (0C to +70C) RST Pulldown Resistor (-40C to +85C) VRST Pullup Resistor PROG Pullup Resistor Power-Fail Warning Voltage (0C to +70C) Power-Fail Warning Voltage (-40C to +85C) Minimum Operating Voltage (0C to +70C) Minimum Operating Voltage (-40C to +85C) Lithium Supply Voltage Operating Current at 16MHz Idle Mode Current at 12MHz (0C to +70C) Idle Mode Current at 12MHz (-40C to +85C) Stop Mode Current Pin Capacitance Output Supply Voltage (VCCO) Output Supply Battery-Backed Mode (VCCO, CE 1-4, PE 1-2) (0C to +70C) Output Supply Battery-Backed Mode (VCCO, CE 1-4, PE 1-2) (-40C to +85C) Output Supply Current at VCCO = VCC - 0.45V Lithium-Backed Quiescent Current (0C to +70C) Lithium-Backed Quiescent Current (-40C to +85C) Reset Trip Point in Stop Mode With BAT = 3.0V (0C to +70C) With BAT = 3.0V (-40C to +85C) With BAT = 3.0V (0C to +70C) SYMBOL IIL RRE RRE RVR RPR VPFW VPFW VCCMIN VCCMIN VLI ICC IIDLE IIDLE ISTOP CIN VCCO1 VCCO2
(TA = 0C to +70C; VCC = 5V 10%)
MIN TYP MAX +10 40 30 4.7 40 4.25 4.1 4.00 3.85 2.5 4.37 4.37 4.12 4.09 4.50 4.6 4.25 4.25 4.0 36 7.0 8.0 80 10 VCC -0.45 VLI -0.65 VLI -0.9 75 5 75 4.0 3.85 4.4 75 500 4.25 4.25 4.65 150 180 UNITS A kW kW kW kW V V V V V mA mA mA A pF V V 1 1, 10 1 1, 10 1 2 3 3, 10 4 5 1, 2 1, 8 10 NOTES
VCCO2 ICCO1 ILI ILI
V mA nA nA
1, 8, 10 6 7 7 1 1, 10 1
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DS5001FP
AC CHARACTERISTICS EXPANDED BUS MODE TIMING SPECIFICATIONS (TA = 0C to +70C; VCC = 5V 10%)
# 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 ALE Low to PSEN Low PSEN Pulse Width PSEN Low to Valid Instruction In at 12MHz at 16MHz Input Instruction Hold After PSEN Going High Input Instruction Float After PSEN Going High Address Hold After PSEN Going High Address Valid to Valid Instruction In at 12MHz at 16MHz PSEN Low to Address Float RD Pulse Width WR Pulse Width RD Low to Valid Data In at 12MHz at 16MHz Data Hold After RD High Data Float After RD High ALE Low to Valid Data In at 12MHz at 16MHz Valid Address to Valid Data In at 12MHz at 16MHz ALE Low to RD or WR Low Address Valid to RD or WR Low Data Valid to WR Going Low Data Valid to WR High at 12MHz at 16MHz Data Valid After WR High RD Low to Address Float RD or WR High to ALE High PARAMETER Oscillator Frequency ALE Pulse Width Address Valid to ALE Low Address Hold After ALE Low ALE Low to Valid Instruction In at 12MHz at 16MHz SYMBOL 1/ tCLK tALPW tAVALL tAVAAV tALLVI tALLPSL tPSPW tPSLVI tPSIV tPSIX tPSAV tAVVI tPSLAZ tRDPW tWRPW tRDLDV tRDHDV tRDHDZ tALLVD tAVDV tALLRDL tAVRDL tDVWRL tDVWRH tWRHDV tRDLAZ tRDHALH 3tCLK - 50 4tCLK - 130 tCLK - 60 7tCLK - 150 7tCLK - 90 tCLK - 50 tCLK - 40 0 2tCLK - 70 8tCLK - 150 8tCLK - 90 9tCLK - 165 9tCLK - 105 3tCLK + 50 0 6tCLK - 100 6tCLK - 100 5tCLK - 165 5tCLK - 105 tCLK - 8 5tCLK - 150 5tCLK - 90 0 tCLK - 20 tCLK - 25 3tCLK - 35 3tCLK - 150 3tCLK - 90 MIN 1.0 2tCLK - 40 tCLK - 40 tCLK - 35 MAX 16 UNITS MHz ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 0 tCLK + 50 ns ns ns
4tCLK - 150 4tCLK - 90
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DS5001FP
EXPANDED PROGRAM-MEMORY READ CYCLE
EXPANDED DATA-MEMORY READ CYCLE
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DS5001FP
EXPANDED DATA-MEMORY WRITE CYCLE
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DS5001FP
AC CHARACTERISTICS (continued) EXTERNAL CLOCK DRIVE
# 28 External Clock-Low Time 29 External Clock-Rise Time 30 External Clock-Fall Time 31 at 12MHz at 16MHz at 12MHz at 16MHz at 12MHz at 16MHz PARAMETER External Clock-High Time at 12MHz at 16MHz
(TA = 0C to +70C; VCC = 5V 10%)
SYMBOL tCLKHPW tCLKLPW tCLKR tCLKF MIN 20 15 20 15 20 15 20 15 MAX UNITS ns ns ns ns
EXTERNAL CLOCK TIMING
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DS5001FP
AC CHARACTERISTICS (continued) POWER CYCLE TIME
# 32 33 34 PARAMETER Slew Rate from VCCMIN to VLI Crystal Startup Time Power-On Reset Delay
(TA = 0C to +70C; VCC = 5V 10%)
SYMBOL tF tCSU tPOR MIN 130 MAX (Note 9) 21,504 UNITS s tCLK
POWER CYCLE TIMING
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DS5001FP
AC CHARACTERISTICS (continued) SERIAL PORT TIMING, MODE 0
# 35 36 37 38 39 PARAMETER Serial-Port Clock-Cycle Time Output-Data Setup to Rising-Clock Edge Output-Data Hold After Rising-Clock Edge Clock-Rising Edge to Input-Data Valid Input-Data Hold After Rising-Clock Edge
(TA = 0C to +70C; VCC = 5V 10%)
SYMBOL tSPCLK tDOCH tCHDO tCHDV tCHDIV 0 MIN
12tCLK 10tCLK - 133 2tCLK - 117 10tCLK - 133
MAX
UNITS s ns ns ns ns
SERIAL PORT TIMING, MODE 0
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DS5001FP
AC CHARACTERISTICS (continued) BYTE-WIDE ADDRESS/DATA BUS TIMING (TA = 0C to +70C; VCC = 5V 10%)
# 40 41 42 43 44 45 46 47 48 49 50 51 52 53 PARAMETER Delay to Byte-Wide Address Valid from CE1 , CE2 , or CE1N Low During Op Code Fetch Pulse Width of CE 1-4, PE 1-4 or CE1N Byte-Wide Address Hold After CE1 , CE2 , or CE1N High During Op Code Fetch Byte-Wide Data Setup to CE1 , CE2 , or CE1N High During Op Code Fetch Byte-Wide Data Hold After CE1 , CE2 or CE1N High During Op Code Fetch Byte-Wide Address Hold After CE 1-4, PE 1-4, or CE1N High During MOVX Delay from Byte-Wide Address Valid CE 1-4, PE 1-4, or CE1N Low During MOVX Byte-Wide Data Setup to CE 1-4, PE 1-4, or CE1N High During MOVX (read) Byte-Wide Data Hold After CE 1-4, PE 1-4, or CE1N High During MOVX (read) Byte-Wide Address Valid to R/ W Active During MOVX (write) Delay from R/ W Low to Valid Data Out During MOVX (write) Valid Data-Out Hold Time from CE 1-4, PE 1-4, or CE1N High Valid Data-Out Hold Time from R/ W High Write Pulse Width (R/ W Low Time) SYMBOL tCE1LPA tCEPW tCE1HPA tOVCE1H tCE1HOV tCEHDA tCELDA tDACEH tCEHDV tAVRWL tRWLDV tCEHDV tRWHDV tRWLPW 4tCLK - 35 2tCLK - 20 1tCLK + 40 0 4tCLK - 30 4tCLK - 35 1tCLK + 40 0 3tCLK - 35 20 1tCLK - 15 0 6tCLK - 20 MIN MAX 30 UNITS ns ns ns ns ns ns ns ns ns ns ns ns ns ns
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DS5001FP
BYTE-WIDE BUS TIMING
RPC AC CHARACTERISTICS, DBB READ (TA = 0C to +70C; VCC = 5V 10%)
# 54 55 56 57 58 59 PARAMETER CS , A0 Setup to RD CS , A0 Hold After RD RD Pulse Width CS , A0 to Data-Out Delay RD to Data-Out Delay RD to Data-Float Delay SYMBOL tAR tRA tRR tAD tRD tRDZ MIN 0 0 160 0 MAX UNITS ns ns ns ns ns ns
130 130 85
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DS5001FP
RPC AC CHARACTERISTICS, DBB WRITE (TA = 0C to +70C; VCC = 5V 10%)
# 60 61A 61B 62 63 64 PARAMETER CS , A0 Setup to WR CS , Hold After WR A0, Hold After WR WR Pulse Width Data Setup to WR Data Hold After WR SYMBOL tAW tWA tWA tWW tDW tWD MIN 0 0 20 160 130 20 MAX UNITS ns ns ns ns ns ns
AC CHARACTERISTICS, DMA
# 65 66 67 68
DACK RD RD
(TA = 0C to +70C; VCC = 5V 10%)
SYMBOL tACC tCAC tACD tCRQ MIN 0 0 0 MAX UNITS ns ns ns ns
or or
DACK
PARAMETER to WR or RD WR to DACK to Data Valid WR to DRQ Cleared
130 110
AC CHARACTERISTICS, PROG
# 69 70 PARAMETER PROG Low to Active PROG High to Inactive
(TA = 0C to +70C; VCC = 5V 10%)
SYMBOL tPRA tPRI MIN 48 48 MAX UNITS CLKS CLKS
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DS5001FP
RPC TIMING MODE
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DS5001FP
NOTES:
All parameters apply to both commercial and industrial temperature operation unless otherwise noted. 1) All voltages are referenced to ground. 2) Maximum operating ICC is measured with all output pins disconnected; XTAL1 driven with tCLKR, tCLKF = 10ns, VIL = 0.5V; XTAL2 disconnected; RST = PORT0 = VCC, MSEL = VSS. 3) Idle mode, IIDLE, is measured with all output pins disconnected; XTAL1 driven with tCLKR, tCLKF = 10ns, VIL = 0.5V; XTAL2 disconnected; PORT0 = VCC, RST = MSEL = VSS. 4) Stop mode, ISTOP, is measured with all output pins disconnected; PORT0 = VCC; XTAL2 not connected; RST = MSEL = XTAL1 = VSS. 5) Pin capacitance is measured with a test frequency: 1MHz, TA = +25C. 6) ICCO1 is the maximum average operating current that can be drawn from VCCO in normal operation. 7) ILI is the current drawn from VLI input when VCC = 0V and VCCO is disconnected. 8) VCCO2 is measured with VCC < VLI, and a maximum load of 10A on VCCO. 9) Crystal startup time is the time required to get the mass of the crystal into vibrational motion from the time that power is first applied to the circuit until the first clock pulse is produced by the on-chip oscillator. The user should check with the crystal vendor for a worst-case specification on this time. 10) This parameter applies to industrial temperature operation. 11) PF pin operation is specified with VBAT 3.0V.
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DS5001FP
80-PIN MQFP
MIN MAX A 3.40 A1 0.25 A2 2.55 2.87 B 0.30 0.50 C 0.13 0.23 D 23.70 24.10 D1 19.90 20.10 E 17.70 18.10 E1 13.90 14.10 e 0.80 BSC L 0.65 0.95 56-G4005-001
DIM
MM
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DS5001FP
44-PIN MQFP
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DS5001FP
REVISION HISTORY
The following represent the key differences between 112795 and 073096 version of the DS5001FP data sheet. Please review this summary carefully. 1) Change VCC02 specification from VLI - 0.5 to VLI - 0.65 (PCN F62501). 2) Update mechanical specifications. The following represent the key differences between 073096 and 111996 version of the DS5001FP data sheet. Please review this summary carefully. 1) Change VCC01 from VCC - 0.3 to VCC - 0.35. The following represent the key differences between 111996 and 061297 version of the DS5001FP data sheet. Please review this summary carefully. 1) PF signal moved from VOL2 test specification to VOL1. PCN No. (D72502) 2) AC characteristics for battery-backed SDI pulse specification added. The following represent the key differences between 061297 and 051099 version of the DS5001FP data sheet. Please review this summary carefully. 1) 2) 3) 4) 5) 6) Reduced absolute maximum voltage to VCC + 0.5V. Added note clarifying storage temperature specification is for non-battery-backed state. Changed RRE min (industrial temp range) from 40kW to 30kW. Changed VPFW max (industrial temp range) from 4.5V to 4.6V. Added industrial specification for ILI. Reduced tCE1HOV and tCEHDV from 10ns to 0ns.
The following represent the key differences between 051099 and 052499 version of the DS5001FP data sheet. Please review this summary carefully. 1) Minor markups and ready for approval.
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