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| 2N6166 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N6166 is Designed to operate in a collector modulated VHF Power Amplifier Applications up to 200 MHz. PACKAGE STYLE .500 4L FLG .112x45 A FULL R L E C O.125 NOM. FEATURES: * C = 60 % min. @ 100 W/150 MHz * PG = 6.0 dB min. @ 100 W/150 MHz * OmnigoldTM Metalization System C B B E H D G F E IJ K MAXIMUM RATINGS IC VCBO VEBO PDISS TJ TSTG JC 9.0 A 65 V 4.0 V 117 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 1.5 C/W DIM A B C D E F G H I J K L MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .125 / 3.18 .245 / 6.22 .720 / 18.28 .125 / 3.18 .970 / 24.64 .495 / 12.57 .003 / 0.08 .090 / 2.29 .150 / 3.81 .980 / 24.89 .230 / 5.84 .255 / 6.48 .7.30 / 18.54 .980 / 24.89 .505 / 12.83 .007 / 0.18 .110 / 2.79 .175 / 4.45 .280 / 7.11 1.050 / 26.67 ORDER CODE: ASI10790 CHARACTERISTICS SYMBOL BVCES BVCEO BVEBO ICES ICBO hFE COB PG C VCC = 28 V TC = 25 C NONETEST CONDITIONS IC = 200 mA IC = 200 mA IE = 10 Ma VCE = 30 V VCB = 30 V VCE = 5.0 V VCE = 28 V POUT = 100 W IC = 500 mA f = 1.0 MHz MINIMUM TYPICAL MAXIMUM 65 35 4.0 5.0 30 5.0 130 6.0 UNITS V V V mA mA --pF dB % f = 150 MHz 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 This datasheet has been downloaded from: www..com Datasheets for electronic components. |
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