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SUBMINIATURE PHOTOINTERRUPTER Description The MIT-4A11A consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor , double-layer mold plastic package. It is a transmissive subminiature photointerrupter. 1 2 MIT-4A11A Package Dimensions C E 3 Unit : mm A 4.2 C 4 5.0 1.5 (1.0 (0.3) 2.0 Features l l l l Ultra-compact PWB mounting type package High sensing accuracy ( Slit width: 0.3mm ) Gap between light emitter and detector: 2mm 3.9 2.8 5.2 1.50.1Hold 4-0.5 4-0.15 4.0 MIN. Applications l l l *2.54 *4.0 Cameras Floppy disk drives Printer NOTE 1. Tolerance is 0.25 mm (.010") unless otherwise noted. 2. Burr's dimension : 0.15MAX 3.( ) : Reference dimensions 4. The dimensions indicated by * refer to those measured from the lead base Absolute Maximum Ratings Parameter Continuous Forward Current INPUT Reverse Voltage Power Dissipation Collector-emitter breakdown voltage OUTPUT Emitter-Collector breakdown voltage Collector power dissipation Total power dissipation Operating Temperature Range Storage Temperature Range Soldering temperature Symbol IF VR Pad V(BR)CEO V(BR)ECO PC PTOT Topr Tstg Tsol Maximum Rating 50 5 75 30 5 75 100 @TA =25oC Unit mA V mW V V mW mW o -25 C to + 85 C -40oC to + 100oC 260 C for 3 seconds o o Unity Opto Technology Co., Ltd. 04/01/2002 MIT-4A11A Optical-Electrical Characteristics Parameter Input Forward Voltage Reverse Current Output Collector Dark Current Collector Emitter Saturation Voltage @TA =25oC symbol VF IR Iceo VCE(SAT) A Min. 0.5 3.0 5.0 7.0 Typ. 1.2 50 50 Max. 1.4 10 100 0.4 4.0 6.0 8.0 10.0 150 150 S S Ic=100A, Vce =5V RL=1K mA IF =20mA, Vce =5V Unit. V A nA V Test Conditions IF =20mA VR =3V Vce =10V Ic=0.1mA,Ee=0.1mW/cm2 Collector Current Transfer Characteristics Response Time (RISE) Response Time (FALL) Ic B C D tr tf Typical Optical-Electrical Characteristic Curves Forward Current IF (mA) 60 120 Power Dissipation (mW) 50 40 30 20 10 0 -25 0 25 50 75 100 100 80 60 40 20 0 -25 PTOT PD , PC 0 25 50 75 100 Ambient Temperature TA Fig.1 forward Current VS. Ambient Temperature Forward Current IF (mA) 100 80 60 40 20 0 0.8 1.2 1.6 2.0 2.4 2.8 Ambient Temperature TA ( oC ) Fig.2 Power Dissipation vs Ambient Temperature 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0.0 0 5 10 15 20 25 30 Vce=2V Ta=25J Forward Voltage VF (V) Fig.3 Forward Current VS Forward Voltage Collector Current Ic (mA) Relative Collector Current (%) 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0.0 0 2 4 6 120 100 80 60 40 20 0 -25 Ta=25J 20mA IF=15mA 10mA 4mA Collector Current Ic (mA) Forward Current IF (mA) Fig.4 Collector Current vs Forward Current 8 10 12 0 25 50 75 Collector-Emitter Voltage Vce (V) Fig.5 Collector Current vs. Vce Ambient Temperature TA ( C ) Fig.6 Relative Collector Current VS. TA o 100 Unity Opto Technology Co., Ltd. 04/01/2002 MIT-4A11A Typical Optical-Electrical Characteristic Curves Collector Dark Current ICEO 10000 VCE=20V 1000 100 10 1 0 25 50 75 100 1000 Response Time (s) 100 10 1 V CE =2V I C =100 A Ta=25 J 0.1 0.01 0.1 1 10 100 Ambient Temperature TA ( J ) Fig.7 Collector Dark Current vs. Ambient Temperature 100 Load Resistance Rt (K) Fig.8 Response Time vs. Load Resistance Relative Sensitivity (%) Ta=25J 80 60 40 20 0 700 Input 800 900 1000 1100 1200 Input Output Response Time Measurement Circuit t 90 % 10 % t tr tf IL VR Output VCC Wavelength (nm) Fig.9 Spectral Sensitivity (Detecting side) Sensing Position Characteristics (Typical) X Y I F =20mA V CE =5V I F =20mA V CE =5V Ta=25 J Relative light current IL (%) 100 Ta=25 J (Center of optical axis) 50 X Y 0 0 -2 -1 0 +1 +2 (mm) -2 -1 0 +1 +2 (mm) 0 + + Distance d (mm) Unity Opto Technology Co., Ltd. 04/01/2002 |
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