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| BSP 40 ... BSP 43 NPN Switching Transistors NPN Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren fur die Oberflachenmontage Power dissipation - Verlustleistung 1.65 4 0.2 0.3 6.5 0.1 3 0.2 1.3 W SOT-223 0.04 g Plastic case Kunststoffgehause 3.5 Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle 1 0.7 2.3 2 3 3.25 Dimensions / Mae in mm 1 = B 2, 4 = C 3 = E Maximum ratings (TA = 25/C) 7 Grenzwerte (TA = 25/C) BSP 40 BSP 41 BSP 42 BSP 43 80 V 90 V 5V 1.3 W 1) 1A 2A 200 mA 150/C - 65...+ 150/C Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation - Verlustleistung Collector current - Kollektorstrom (dc) B open E open C open VCE0 VCB0 VEB0 Ptot IC ICM IBM Tj TS 60 V 70 V Peak Collector current - Kollektor-Spitzenstrom Peak Base current - Basis-Spitzenstrom Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur Characteristics (Tj = 25/C) Min. Collector-Base cutoff current - Kollektorreststrom IE = 0, VCB = 60 V IE = 0, VCB = 60 V, Tj = 150/C Emitter-Base cutoff current - Emitterreststrom IC = 0, VEB = 5 V IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IEB0 VCEsat VCEsat - - - ICB0 ICB0 - - Kennwerte (Tj = 25/C) Typ. - - - - - Max. 100 nA 50 :A 100 nA 250 mV 500 mV Collector saturation volt. - Kollektor-Sattigungsspg. 2) ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% 4 01.11.2003 1 Switching Transistors Characteristics (Tj = 25/C) Min. Base saturation voltage - Basis-Sattigungsspannung 1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA - VCE = 5 V, - IC = 100 :A - VCE = 5 V, - IC = 100 mA - VCE = 5 V, - IC = 500 mA - VCE = 5 V, - IC = 100 :A - VCE = 5 V, - IC = 100 mA - VCE = 5 V, - IC = 500 mA VBEsat VBEsat hFE hFE hFE hFE hFE hFE fT - - 10 40 30 30 100 50 100 MHz RthA RthS BSP 40 ... BSP 43 Kennwerte (Tj = 25/C) Typ. - - - - - - - - - Max. 1V 1.2 V - 120 - - 300 - - 93 K/W 2) 12 K/W DC current gain - Kollektor-Basis-Stromverhaltnis 1) BSP 40 BSP 42 BSP 41 BSP 43 Gain-Bandwidth Product - Transitfrequenz VCE = 5 V, IC = 10 mA, f = 100 MHz Thermal resistance - Warmewiderstand junction to ambient air - Sperrschicht zu umgebender Luft junction to soldering point - Sperrschicht zu Lotpad Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren BSP 30, BSP 31, BSP 32, BSP 33 ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 01.11.2003 1 2 5 |
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