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| IRFM350 MECHANICAL DATA Dimensions in mm (inches) 13.59 (0.535) 13.84 (0.545) 3.53 (0.139) Dia. 3.78 (0.149) 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) N-CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) FEATURES * N-CHANNEL MOSFET * HIGH VOLTAGE * INTEGRAL PROTECTION DIODE * HERMETIC ISOLATED TO-254 PACKAGE 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545) 1 2 3 0.89 (0.035) 1.14 (0.045) 3.81 (0.150) BSC 20.07 (0.790) 20.32 (0.800) 400V 14A W 0.315W 3.81 (0.150) BSC * CERAMIC SURFACE MOUNT PACKAGE OPTION TO-254AA - Isolated Metal Package Pin 1 - Drain Pin 2 - Source Pin 3 - Gate ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VGS ID IDM PD IL dv / dt RqJC RqJA RqCS TJ , TSTG TL 1) 2) Gate - Source Voltage Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Avalanche Current , Clamped 1 Peak Diode Recovery 2 Thermal Resistance Junction - Case Thermal Resistance Junction - Ambient Thermal Resistance Case - Sink Operating Junction and Storage Temperature Range Lead Temperature (1.6mm from case for 10s) VDD = 50V , Starting TJ = 25C , L 1mH , RG = 25W , Peak IL = 27.4A ISD 27.4A , di/dt 190A / mS , VDD BVDSS , TJ 150C , Suggested RG = 2.35W Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk @ VGS = 10V , TC = 25C @ VGS = 10V , TC = 100C @ TC = 25C 20V 14A 9.0A 56A 150W 1.2W / C 14A 4V / ns 0.83C / W 48C / W 0.21C / W typ. -55 to 150C 300C Semelab plc. Prelim. 05/00 IRFM350 ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise stated) Parameter BVDSS STATIC ELECTRICAL RATINGS Drain - Source Breakdown Voltage Test Conditions VGS = 0 ID = 1mA VGS = 10V VGS = 10V VDS = VGS 2 Min. 400 Typ. Max. Unit V ID = 1mA DBVDSS Temperature Coefficient of DTJ Breakdown Voltage RDS(on) Static Drain - Source On-State Resistance 2 Reference to 25C ID = 9A ID = 14A ID = 250mA IDS = 9A VDS = 0.8BVDSS TJ = 125C VGS = 20V VGS = -20V 2 6 0.46 0.315 0.415 4 25 250 100 -100 2600 660 250 12 52 5 25 110 18 65 35 190 170 130 14 56 V / C W V S(W )W( VGS(th) Gate Threshold Voltage gfs IDSS IGSS IGSS Ciss Coss Crss CDC Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr ton LD LS Forward Transconductance VDS 15V VGS = 0 Zero Gate Voltage Drain Current Forward Gate - Source Leakage Reverse Gate - Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain - Case Capacitance Total Gate Charge Gate - Source Charge Gate - Drain ("Miller") Charge Turn- On Delay Time Rise Time Turn-Off Delay Time Fall Time mA nA VGS = 0 VDS = 25V f = 1MHz VGS = 10V ID = 14A VDS = 0.5BVDSS VDD = 200V ID = 14A RG = 2.35W pF nC ns SOURCE - DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current 1 A V ns Diode Forward Voltage 2 Reverse Recovery Time 2 Reverse Recovery Charge Forward Turn-On Time 2 IS = 14A VGS = 0 IF = 14A TJ = 25C TJ = 25C Negligible 8.7 8.7 1.7 1200 11 di / dt 100A/ms VDD 50V mC PACKAGE CHARACTERISTICS Internal Drain Inductance Measured from 6mm down drain lead to centre of die Internal Source Inductance Measured from 6mm down source lead to source bond pad nH Notes 1) Repetitive Rating - Pulse width limited by Maximum Junction Temperature 2) Pulse Test: Pulse Width 300ms, d 2%. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 05/00 |
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