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Power F-MOS FETs
2SK2374
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown
unit: mm
15.50.5
4.5
3.20.1
10.0
3.00.3
s Applications
q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply
5
26.50.5
5
23.4 22.00.5
2.0 1.2
5
18.60.5
5 5
4.0 2.00.2 1.10.1
2.0
0.70.1
s Absolute Maximum Ratings (TC = 25C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 900 30 5 10 45 100 3 150 -55 to +150 Unit V V
5.450.3
3.30.3 0.70.1
5.450.3
5.50.3
5
1
2
3
A A mJ W C C
1: Gate 2: Drain 3: Source TOP-3E Package
Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature
*
TC = 25C Ta = 25C
L = 3.6mH, IL = 5A, 1 pulse
s Electrical Characteristics (TC = 25C)
Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VDSF Coss td(on) tr tf td(off) Rth(ch-c) Rth(ch-a) VDD = 200V, ID = 3A VGS = 10V, RL = 66.6 Conditions VDS = 720V, VGS = 0 VGS = 30V, VDS = 0 ID = 1mA, VGS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 3A VDS = 25V, ID = 3A IDR = 5A, VGS = 0 1400 VDS = 20V, VGS = 0, f = 1MHz 140 60 30 60 60 170 1.25 41.67 1.5 900 2 2 3.5 -1.6 5 2.8 min typ max 100 1 Unit A A V V S V pF pF pF ns ns ns ns C/W C/W
Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time (delay time) Rise time Fall time Turn-off time (delay time) Thermal resistance between channel and case Thermal resistance between channel and atmosphere
2.0
1
Power F-MOS FETs
Area of safe operation (ASO)
100 120
2SK2374
PD Ta
Allowable power dissipation PD (W)
(1) TC=Ta (2) Without heat sink (PD=3W) 100
IAS L-load
TC=25C
Non repetitive pulse TC=25C IDP ID 1ms 1 10ms 100ms DC 0.1 t=100s
Drain current ID (A)
10
80 (1) 60
Avalanche current IAS (A)
100
30
10
3
45mJ
40
1
20 (2)
0.3
0.01 1 3 10 30 100 300 1000
0 0 20 40 60 80 100 120 140 160
0.1 0.1
0.3
1
3
10
Drain to source voltage VDS (V)
Ambient temperature Ta (C)
L-load (mH)
ID VGS
10 VDS=25V TC=25C 6
Vth TC
50 VDS=25V ID=1mA 5
VDS VGS
TC=25C
8
Drain to source voltage VDS (V)
Gate threshold voltage Vth (V)
40 ID=10A 30
Drain current ID (A)
4
6
3
4
20
2
5A 10 2.5A 0
2
1
0 0 1 2 3 4 5 6 7
0 0 25 50 75 100 125 150
0
5
10
15
20
25
30
Gate to source voltage VGS (V)
Case temperature TC (C)
Gate to source voltage VGS (V)
RDS(on) ID
Drain to source ON-resistance RDS(on) ()
6 TC=150C 5 6
| Yfs | ID
Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)
10000
Ciss, Coss, Crss VDS
VDS=25V TC=25C f=1MHz TC=25C
Forward transfer admittance |Yfs| (S)
VGS=10V
5
1000
Ciss
4 100C 3 25C
4
3
100 Coss Crss 10
2
2
0C 1
1
0 0 1 2 3 4 5 6 7 8
0 0 1 2 3 4 5 6 7 8
1 0 40 80 120 160 200
Drain current ID (A)
Drain current ID (A)
Drain to source voltage VDS (V)
2
Power F-MOS FETs
VDS, VGS Qg
600 12 100
2SK2374
Rth(t) t
Notes: Rth was measured at Ta=25C and under natural convection. (1) without heat sink (2) with a 100 x 100 x 2mm Al heat sink 10 (1)
500 VDS 400 VGS
10
Thermal resistance Rth(t) (C/W)
Drain to source voltage VDS (V)
Gate to source voltage VGS (V)
(2)
8
300
6
1
200
4
0.1
100
2
0 0 10 20 30 40 50
0 60
0.01 10-4
10-3
10-2
10-1
1
10
102
103
Gate charge amount Qg (nC)
Time t (s)
3

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