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FDMS3672 N-Channel UltraFET Trench MOSFET
February 2007
FDMS3672 N-Channel UltraFET Trench MOSFET
100V, 22A, 23m Features
Max rDS(on) = 23m at VGS = 10V, ID = 7.4A Max rDS(on) = 29m at VGS = 6V, ID = 6.6A Typ Qg = 31nC at VGS = 10V Low Miller Charge Optimized efficiency at high frequencies RoHS Compliant
tm
General Description
UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.
Application
DC - DC Conversion
Pin 1
S
S
S
G
D D D D
D D D D Power (Bottom view)
5 6 7 8
4G 3S 2S 1S
MOSFET Maximum Ratings TA = 25C unless otherwise noted
Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed PD TJ, TSTG Power Dissipation Power Dissipation TC = 25C TA = 25C (Note 1a) TC = 25C TC = 25C TA = 25C (Note 1a) Ratings 100 20 22 41 7.4 30 78 2.5 -55 to +150 W C A Units V V
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 1.6 50 C/W
Package Marking and Ordering Information
Device Marking FDMS3672 Device FDMS3672 Package Power 56 Reel Size 13'' Tape Width 12mm Quantity 3000 units
(c)2007 Fairchild Semiconductor Corporation FDMS3672 Rev.C
1
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FDMS3672 N-Channel UltraFET Trench MOSFET
Electrical Characteristics TJ = 25C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V ID = 250A, referenced to 25C VDS = 80V, VGS = 0V TJ = 55C VGS = 20V, VDS = 0V 100 104 1 10 100 V mV/C A nA
On Characteristics
VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A ID = 250A, referenced to 25C VGS = 10V, ID = 7.4A VGS = 6V, ID = 6.6A VGS = 10V, ID = 7.4A, TJ = 125C VDS = 10V, ID = 7.4A 2 3.1 -11 19 24 33 20 23 29 40 S m 4 V mV/C
Dynamic Characteristics
Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 50V, VGS = 0V, f = 1MHz f = 1MHz 2015 210 90 1.3 2680 280 135 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge at 10V Total Gate Charge at 4.5V Gate to Source Gate Charge Gate to Drain "Miller" Charge VGS = 0V to 10V VGS = 0V to 4.5V VDD = 50V ID = 7.4A VDD = 50V, ID = 7.4A VGS = 10V, RGEN = 6 23 11 36 8 31 9.5 8 37 20 58 16 44 ns ns ns ns nC nC nC nC
Drain-Source Diode Characteristics
VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 7.4A (Note 2) 0.8 52 101 1.2 78 152 V ns nC IF = 7.4A, di/dt = 100A/s
Notes: 1: RJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design. a. 50C/W when mounted on a 1 in2 pad of 2 oz copper b. 125C/W when mounted on a minimum pad of 2 oz copper
2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%.
FDMS3672 Rev.C
2
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FDMS3672 N-Channel UltraFET Trench MOSFET
Typical Characteristics TJ = 25C unless otherwise noted
60
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
3.0
VGS = 10V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = 8V VGS = 6V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX
50
ID, DRAIN CURRENT (A)
2.5 2.0 1.5 1.0
VGS = 5V
40 30 20
VGS = 5V
VGS = 6V
VGS = 8V
10 0 0.0
VGS = 10V
0.5 0 10 20 30 40 ID, DRAIN CURRENT(A) 50 60
0.5 1.0 1.5 2.0 2.5 VDS, DRAIN TO SOURCE VOLTAGE (V)
3.0
Figure 1. On-Region Characteristics
Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage
60
rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m)
ID = 7.4A PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150
ID = 7.4A VGS = 10V
50 40 30
TJ = 25oC TJ = 150oC
20 10 4.5
6.0 7.5 9.0 VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 3. Normalized On- Resistance vs Junction Temperature
30
IS, REVERSE DRAIN CURRENT (A)
Figure 4. On-Resistance vs Gate to Source Voltage
100
ID, DRAIN CURRENT (A)
25 20 15 10 5
PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX
VGS = 0V
10 1 0.1 0.01 1E-3 0.0
TJ = -55oC TJ = 150oC TJ = 25oC
TJ =
150oC
TJ = 25oC TJ = -55oC
0 2
3 4 5 6 7 VGS, GATE TO SOURCE VOLTAGE (V)
8
0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage vs Source Current
FDMS3672 Rev.C
3
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FDMS3672 N-Channel UltraFET Trench MOSFET
Typical Characteristics TJ = 25C unless otherwise noted
VGS, GATE TO SOURCE VOLTAGE(V)
10
ID = 7.4A VDD = 25V VDD = 50V
10000
Ciss
8
CAPACITANCE (pF)
1000
Coss
6
VDD = 75V
4 2 0 0 10 20 30 Qg, GATE CHARGE(nC) 40
100
f = 1MHz VGS = 0V
Crss
10 0.1
1 10 VDS, DRAIN TO SOURCE VOLTAGE (V)
100
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
50
20
IAS, AVALANCHE CURRENT(A)
ID, DRAIN CURRENT (A)
10
40
VGS = 10V
TJ = 25oC TJ = 125oC
30
VGS = 6V
20 10
RJC = 1.6 C/W
o
Limited by Package
1 0.01
0.1 1 10 tAV, TIME IN AVALANCHE(ms)
100 300
0 25
50
75
100
o
125
150
TC, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive Switching Capability
60
100us
Figure 10. Maximum Continuous Drain Current vs Case Temperature
2000 1000
VGS = 10V
P(PK), PEAK TRANSIENT POWER (W)
FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 150 - T A ---------------------125 TA = 25oC
ID, DRAIN CURRENT (A)
10
1ms 10ms 100ms
1
100
I = I25
0.1
OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on)
SINGLE PULSE TJ = MAX RATED TA = 25OC
1s 10s DC
10
0.01
1
0.3 -3 10
SINGLE PULSE
1E-3 0.1
1
10
100
400
10
-2
10
-1
10
0
10
1
10
2
10
3
VDS, DRAIN to SOURCE VOLTAGE (V)
t, PULSE WIDTH (s)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power Dissipation
FDMS3672 Rev.C
4
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FDMS3672 N-Channel UltraFET Trench MOSFET
Typical Characteristics TJ = 25C unless otherwise noted
2 1
NORMALIZED THERMAL IMPEDANCE, ZJA
DUTY CYCLE-DESCENDING ORDER
0.1
D = 0.5 0.2 0.1 0.05 0.02 0.01
PDM
0.01
t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA
-1 0 1 2 3
SINGLE PULSE
1E-3 5E-4 -3 10 10
-2
10
10
10
10
10
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
FDMS3672 Rev.C
5
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FDMS3672 N-Channel UltraFET Trench MOSFET
FDMS3672 Rev.C
6
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FDMS3672 N-Channel UItraFET Trench MOSFET
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACT(R) FAST(R) FASTrTM FPSTM FRFETTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHC(R) UniFETTM VCXTM WireTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
Datasheet Identification Advance Information
Product Status Formative or In Design First Production
Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I22 FDMS3672 Rev. C 7 www.fairchildsemi.com

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