 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| UNISONIC TECHNOLOGIES CO., LTD DTA114T DIGITAL TRANSISTORS (BUILT- IN BIAS RESISTORS) FEATURES * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow positive input. PNP SILICON TRANSISTOR EQUIVALENT CIRCUIT *Pb-free plating product number:DTA114TL ORDERING INFORMATION Order Number Normal Lead Free Plating DTA114T-AE3-R DTA114TL-AE3-R DTA114T-AL3-R DTA114TL-AL3-R DTA114T-AN3-R DTA114TL-AN3-R Package SOT-23 SOT-323 SOT-523 Pin Assignment 1 2 3 E B C E B C E B C Packing Tape Reel Tape Reel Tape Reel DTA114TL-AE3-R (1)Packing Type (2)Package Type (3)Lead Plating (1) R: Tape Reel (2) AE3: SOT-23, AL3: SOT-323, AN3: SOT-523 (3) L: Lead Free Plating, Blank: Pb/Sn MARKING ofwww.unisonic.com.tw Copyright (c) 2005 Unisonic Technologies Co., Ltd 1of 3 QW-R206-061,B DTA114T ABSOLUTE MAXIMUM RATINGS (Ta = 25) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current SYMBOL VCBO VCEO VEBO IC PNP SILICON TRANSISTOR RATING UNIT -50 V -50 V -5 V -100 mA SOT-23 200 mW Collector Power Dissipation PC SOT-323/SOT-523 150 mW Junction Temperature TJ +150 Storage Temperature TSTG -55~+150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta= 25, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Input Resistance Transition Frequency * Transition frequency of the device SYMBOL BVCBO BVCEO BVEBO VCE(SAT) ICBO IEBO hFE R1 fT TEST CONDITIONS IC=-50A IC=-1mA IE=-50A IC=-10mA, IB=-1mA VCB=-50V VEB=-4V VCE=-5V, IC=-1mA VCE=-10V, IE=5mA, f=100MHz* MIN -50 -50 -5 TYP MAX UNIT V V V -0.3 V -0.5 A -0.5 A 600 13 k MHz 100 7 250 10 250 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 3 QW-R206-061,B DTA114T PNP SILICON TRANSISTOR TYPICAL CHARACTERISTICS UTC assum es no responsibility for equipm ent failures that result from using products at v alues that ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or other param eters) listed in products specifications of any and all UT C products described or contained herein. UT C products are not designed for use in life support appliances, dev ices or system s where m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate and reliable and m ay be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Collector Saturation Voltage, VCE(SAT) (mV) DC Current Gain, hFE 3 of 3 QW-R206-061,B |
Price & Availability of DTA114T-AE3-R
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |