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Preliminary Datasheet 3A DDR TERMINATION REGULATOR General Description The AP2302 linear regulator is designed to meet the JEDEC specification SSTL-2 and SSTL-18 for termination of DDR-SDRAM. The regulator can sink or source up to 3A current continuously, offers enough current for most DDR applications. Output voltage is designed to track the reference voltage within a 2% (DDR I) and 3% (DDR II) tolerance for load regulation while preventing shooting through on the output stage. On-chip thermal limiting provides protection against a combination of high current and ambient temperature which would create an excessive junction temperature. The AP2302, used in conjunction with series termination resistors, provides an excellent voltage source for active termination schemes of high speed transmission lines as those seen in high speed memory buses and distributed backplane designs. The AP2302 is available in SOIC-8, TO-252-5L and TO-263-5L packages. AP2302 Features * * * * * Support Both DDR I (1.25VTT) and DDR II (0.9VTT) Requirements Source and Sink Current up to 3A High Accuracy Output Voltage at Full-load Adjustable VOUT by External Resistors Shutdown for Standby or Suspend Operation with High-impedance Output Mode Applications * * * DDR-SDRAM Termination DDR-II Termination SSTL-2 Termination SOIC-8 TO-252-5L TO-263-5L Figure 1. Package Types of AP2302 Jul. 2006 Rev. 1. 2 1 BCD Semiconductor Manufacturing Limited Preliminary Datasheet 3A DDR TERMINATION REGULATOR Pin Configuration M Package (SOIC-8) VIN GND REFEN VOUT 1 2 3 4 8 7 6 5 VCNTL VCNTL VCNTL VCNTL AP2302 D Package (TO-252-5L) 5 4 3 2 1 VOUT REFEN VCNTL (TAB) GND VIN S5 Package (TO-263-5L) 5 4 3 2 1 VOUT REFEN VCNTL (TAB) GND VIN Figure 2. Pin Configuration of AP2302 (Top View) Pin Description Pin Number SOIC-8 1 2 3 4 5, 6, 7, 8 TO-252-5L 1 2 4 5 3 TO-263-5L 1 2 4 5 3 Pin Name VIN GND REFEN VOUT VCNTL Power Input Ground Reference Voltage Input and Chip Enable Output Voltage Supply Voltage for Internal Circuit (Internally Connected for SOIC8), (TAB for TO-252-5L and TO-263-5L) Function Jul. 2006 Rev. 1. 2 2 BCD Semiconductor Manufacturing Limited Preliminary Datasheet 3A DDR TERMINATION REGULATOR Functional Block Diagram VCNTL 3 (5, 6, 7, 8) AP2302 VIN 1 CURRENT LIMIT BANDGAP A(B) A for 5-pin B for 8-pin OUTPUT CONTROL REFEN 4 (3) 5 (4) VOUT START UP THERMAL PROTECT 2 GND Figure 3. Functional Block Diagram of AP2302 Ordering Information AP2302 Circuit Type Package M: SOIC-8 D: TO-252-5L S5: TO-263-5L Temperature Range Part Number Tin Lead AP2302M SOIC-8 0 to 125oC AP2302MTR TO-2525L TO-2635L AP2302D 0 to 125oC AP2302DTR AP2302S5 0 to 125oC AP2302S5TR AP2302S5TR-E1 AP2302S5 AP2302S5-E1 Tape Reel AP2302DTR-E1 AP2302S5-E1 AP2302D AP2302S5 AP2302D-E1 AP2302S5-E1 Tape Reel Tube AP2302MTR-E1 AP2302D-E1 2302M AP2302D 2302M-E1 AP2302D-E1 Tape Reel Tube Lead Free AP2302M-E1 E1: Lead Free Blank: Tin Lead TR: Tape and Reel Blank: Tube Marking ID Packing Type Tin Lead 2302M Lead Free 2302M-E1 Tube Package BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Jul. 2006 Rev. 1. 2 3 BCD Semiconductor Manufacturing Limited Preliminary Datasheet 3A DDR TERMINATION REGULATOR Absolute Maximum Ratings (Note 1) Parameter Supply Voltage for Internal Circuit Power Dissipation ESD (Human Body Model) Junction Temperature Storage Temperature Range Lead Temperature (Soldering, 10sec) Symbol VCNTL PD ESD TJ TSTG TLEAD SOIC-8 Package Thermal Resistance (Free Air) JA TO-252-5L TO-263-5L Value 7 Internally Limited 2 150 -65 to 150 260 160 130 90 oC/W AP2302 Unit V W KV oC oC oC Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Recommended Operating Conditions Parameter Supply Voltage for Internal Circuit DDR I Power Input DDR II Junction Temperature Note 2: Keep VCNTL TJ VIN in power on and power off sequences. 0 VIN 1.6 1.8 125 oC Symbol VCNTL (Note 2, 3) Min Typ 3.3 2.5 Max 6 VCNTL Unit V V Note 3: For safe operation, VCNTL MUST be tied to 3.3V rather than 5V. Jul. 2006 Rev. 1. 2 4 BCD Semiconductor Manufacturing Limited Preliminary Datasheet 3A DDR TERMINATION REGULATOR Electrical Characteristics (TJ=25oC, VIN=2.5V, VCNTL=3.3V, VREFEN=1.25V, COUT=10F (Ceramic), unless otherwise specified.) Parameter Output Offset Voltage DDR I Load Regulation DDR II Quiescent Current of VCNTL Leakage Current in Shutdown Mode Protection Current Limit Thermal Shutdown Temperature Thermal Shutdown Hysteresis Shutdown Function Shutdown Threshold Trigger Output=High Output=Low Note 4: VOS is the voltage measurement defined as VOUT subtracted from VREFEN. 0.8 0.2 V ILIMIT TSHDN 3.3VVCNTL5V 3 150 50 A oC oC AP2302 Symbol VOS Conditions IL=0A (Note 4) IL=0 to 1.5A IL=0 to -1.5A IL=0 to 1.5A IL=0 to -1.5A No Load VREFEN<0.2V, RL=180 Min -20 Typ 0 0.8 0.8 1.2 1.2 3 3 Max 20 2 2 3 3 5 6 Unit mV VOUT/ VOUT IQ ISHDN % mA A Jul. 2006 Rev. 1. 2 5 BCD Semiconductor Manufacturing Limited Preliminary Datasheet 3A DDR TERMINATION REGULATOR Typical Performance Characteristics AP2302 6 6 Sourcing Current (A) Sinking Current (A) 4 4 VCNTL=3.3V VIN=2.5V VOUT=1.25V 2 -40 VCNTL=3.3V VIN=2.5V VOUT=1.25V 2 -40 -20 0 20 40 60 o 80 100 120 -20 0 20 40 60 o 80 100 120 Junction Temperature ( C) Junction Temperature ( C) Figure 4. Sourcing Current vs. Junction Temperature Figure 5. Sinking Current vs. Junction Temperature 650 650 Threshold Voltage (mV) 600 Threshold Voltage (mV) 600 550 550 VCNTL=3.3V 500 VCNTL=5.0V 500 VIN=2.5V VIN=2.5V -40 -20 0 20 40 60 o 80 100 120 -40 -20 0 20 40 60 o 80 100 120 Junction Temperature ( C) Junction Temperature ( C) Figure 6. Threshold Voltage vs. Junction Temperature Figure 7. Threshold Voltage vs. Junction Temperature Jul. 2006 Rev. 1. 2 6 BCD Semiconductor Manufacturing Limited Preliminary Datasheet 3A DDR TERMINATION REGULATOR Typical Performance Characteristics (Continued) AP2302 40 Output Transient Voltage (mV) Output Transient Voltage (mV) Output Current (A) 20 0 -20 3 Output Current (A) 1 -1 -3 -5 Time (s) 40 20 0 -20 3 1 -1 -3 -5 Time (s) Figure 8. 0.9VTT at 3A Transient Response (Conditions: VIN=2.5V, VCNTL=3.3V, COUT=10F) Figure 9. 1.25VTT at 3A Transient Response (Conditions: VIN=2.5V, VCNTL=3.3V, COUT=10F) 0.30 0.28 0.26 VIN=0.9V VIN=0.85V VIN=0.8V RDS(ON) () 0.30 0.28 0.26 0.24 0.22 0.20 VIN=0.9V VIN=0.85V VIN=0.8V RDS(ON)() 0.24 0.22 0.20 0.18 0.16 25 50 75 o VCNTL=3.3V VREFEN=1.0V 100 125 0.18 0.16 25 50 75 o VCNTL=5.0V VREFEN=1.0V 100 125 Junction Temperature ( C) Junction Temperature ( C) Figure 10. RDS(on) vs. Junction Temperature Figure 11. RDS(on) vs. Junction Temperature Jul. 2006 Rev. 1. 2 7 BCD Semiconductor Manufacturing Limited Preliminary Datasheet 3A DDR TERMINATION REGULATOR Typical Performance Characteristics (Continued) AP2302 350 350 Package: SOIC-8 No Heatsink 300 Package: TO-252-5L No Heatsink 300 Copper Area (mm ) Copper Area (mm ) 2 250 250 TC=25 C TC=50 C TC=65 C o o 2 o 200 200 TC=25 C 150 o o o TC=50 C TC=65 C 150 100 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 100 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 Power Dissipation (W) Power Dissipation (W) Figure 12. Copper Area vs. Power Dissipation Figure 13. Copper Area vs. Power Dissipation 350 Package: TO-263-5L No Heatsink 300 Copper Area (mm ) 2 250 TC=25 C TC=50 C TC=65 C o o o 200 150 100 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 Power Dissipation (W) Figure 14. Copper Area vs. Power Dissipation Jul. 2006 Rev. 1. 2 8 BCD Semiconductor Manufacturing Limited Preliminary Datasheet 3A DDR TERMINATION REGULATOR Typical Application VCNTL = 3.3V AP2302 VIN = 2.5V CCNTL R1 VIN REFEN AP2302 GND R2 CSS COUT RDUMMY VCNTL VOUT CIN RTT EN Figure 15. Typical Application of AP2302 R1=R2=100K, RTT=50 / 33 / 25 RDUMMY=1K, as for VOUT discharge when VIN is not present but VCNTL is present CSS=1F, CIN=470F, CCNTL=47F, COUT=470F Jul. 2006 Rev. 1. 2 9 BCD Semiconductor Manufacturing Limited Preliminary Datasheet 3A DDR TERMINATION REGULATOR Mechanical Dimensions SOIC-8 Unit: mm(inch) AP2302 4.800(0.189) 5.000(0.197) 7 1.350(0.053) 1.750(0.069) 0.320(0.013) 8 7 8 0.675(0.027) 0.725(0.029) D 5.800(0.228) 6.200(0.244) D 20:1 1.270(0.050) TYP 0.100(0.004) 0.300(0.012) R0.150(0.006) 0.800(0.031) 0.200(0.008) 1.000(0.039) 3.800(0.150) 4.000(0.157) 0 8 0.330(0.013) 0.510(0.020) 0.900(0.035) 1 5 R0.150(0.006) 0.190(0.007) 0.250(0.010) Jul. 2006 Rev. 1. 2 10 BCD Semiconductor Manufacturing Limited Preliminary Datasheet 3A DDR TERMINATION REGULATOR Mechanical Dimensions (Continued) TO-252-5L Unit: mm(inch) AP2302 0.900(0.035) 1.250(0.049) 6.350(0.250) 6.700(0.264) 4.300(0.169) 5.500(0.217) 2.180(0.086) 2.400(0.094) 0.430(0.017) 0.600(0.023) 4.800(0.189) MIN 9.500(0.374) 10.400(0.410) 0.000(0.000) 0.250(0.010) 5.970(0.235) 6.220(0.245) 4.300(0.169) 5.400(0.213) 2.540(0.100)BSC 5.080(0.200) BSC 0.450(0.018) 0.700(0.028) 1.400(0.055) 1.780(0.070) 0.430(0.017) 0.600(0.023) 2.550(0.100) 3.200(0.126) Jul. 2006 Rev. 1. 2 11 BCD Semiconductor Manufacturing Limited Preliminary Datasheet 3A DDR TERMINATION REGULATOR Mechanical Dimensions (Continued) TO-263-5L Unit: mm(inch) AP2302 1.560 (0.061) 1.760 (0.069) 9.880 (0.389) 10.180 (0.401) 4.470 (0.176) 4.670 (0.184) 1.170 (0.046) 1.370 (0.054) 5.600 (0.220) REF 8.200 (0.323) 8.600 (0.339) 15.140 (0.596) 15.540 (0.612) 5.080 (0.200) 5.480 (0.216) 0.710 (0.028) 0.910 (0.036) 0.020(0.001) 0.250(0.010) 1.700 (0.067) TYP 6.700 (0.264) 6.900 (0.272) 0.310 (0.012) 0.530 (0.021) 2.340 (0.092) 2.740 (0.108) Jul. 2006 Rev. 1. 2 12 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. MAIN SITE BCD Semiconductor Manufacturing Limited - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 BCD Semiconductor Manufacturing Limited - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office 27B, Tower C, 2070, Middle Shen Nan Road, Shenzhen 518031, China Tel: +86-755-8368 3987, Fax: +86-755-8368 3166 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808, Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corporation 3170 De La Cruz Blvd., Suite 105, Santa Clara, CA 95054-2411, U.S.A Tel: +1-408-988 6388, Fax: +1-408-988 6386 |
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