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| UNISONIC TECHNOLOGIES CO., LTD 2N5551 HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High collector-emitter voltage: VCEO=160V * High current gain NPN SILICON TRANSISTOR 1 SOT-89 APPLICATIONS * Telephone switching circuit * Amplifier 1 TO-92 *Pb-free plating product number: 2N5551L ORDERING INFORMATION Order Number Normal Lead Free Plating 2N5551-X-AB3-R 2N5551L-x-AB3-R 2N5551-x-T92-B 2N5551L-x-T92-B 2N5551-x-T92-K 2N5551L-x-T92-K Package SOT-89 TO-92 TO-92 Pin Assignment 1 2 3 B C E E B C E B C Packing Tape Reel Tape Box Bulk 2N5551L-x-AB3-R (1)Packing Type (2)Package Type (3)Rank (4)Lead Plating (1) B: Tape Box, K: Bulk, R: Tape Reel (2) T92: TO-92, AB3: SOT-89 (3) x: refer to Classification of hFE (4) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright (c) 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R201-002.B 2N5551 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 , unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 6 V Collector Dissipation TO-92 625 mW PC Collector Dissipation SOT-89 500 mW Collector Current IC 600 mA Junction Temperature TJ +150 Storage Temperature TSTG -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25 , unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage BVCBO IC=100A, IE=0 Collector-Emitter Breakdown Voltage BVCEO IC=1mA, IB=0 Emitter-Base Breakdown Voltage BVEBO IE=10A, IC=0 Collector Cut-off Current ICBO VCB=120V, IE=0 Emitter Cut-off Current IEBO VBE=4V,IC=0 VCE=5V, IC=1mA hFE1 VCE=5V, IC=10mA DC Current Gain(Note) hFE2 VCE=5V, IC=50mA hFE3 IC=10mA, IB=1mA Collector-Emitter Saturation Voltage VCE(SAT) IC=50mA, IB=5mA IC=10mA, IB=1mA Base-Emitter Saturation Voltage VBE(SAT) IC=50mA, IB=5mA Current Gain Bandwidth Product fT VCE=10V, IC=10mA, f=100MHz Output Capacitance Cob VCB=10V, IE=0 f=1MHz IC=0.25mA, VCE=5V Noise Figure NF RS=1k, f=10Hz ~ 15.7kHz Note: Pulse test: PW<300s, Duty cycle<2% MIN 180 160 6 TYP MAX UNIT V V V nA nA 50 50 80 80 80 160 400 0.15 0.2 1 1 300 6.0 8 V V MHz pF dB 100 CLASSIFICATION OF hFE RANK RANGE A 80-170 B 150-240 C 200-400 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R201-002.B 2N5551 TYPICAL CHARACTERISTICS Collector Output Capacitance 10 Capacitance, Cob (pF) NPN SILICON TRANSISTOR DC Current Gain 103 VCE=5V DC Current Gain, hFE 8 6 4 2 0 10 0 f=1MHz IE=0 102 101 101 Collector-Base Voltage (V) 10 2 10 0 10-1 100 101 102 103 Collector Current, I C (mA) Base-Emitter on Voltage 103 Collector Current, IC (mA) Saturation Voltage (V) Saturation Voltage 101 IC=10*IB VCE=5V 10 2 100 VBE(SAT) 101 10-1 VCE(SAT) 10-2 10-1 100 0 0.2 0.4 0.6 0.8 1.0 100 101 102 10 3 Base-Emitter Voltage (V) Collector Current, IC (mA) Current Gain-Bandwidth Product 103 Current Gain-Bandwidth Product, fT (MHz) V CE=10V 2 10 10 1 100 100 101 102 103 Collector Current, IC (mA) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R201-002.B 2N5551 NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R201-002.B |
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