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VN5770AK-E Quad smart power solid state relay for complete H bridge configurations Features Type VN5770AK-E RDS(on) 280m(1) IOUT 8.5A(2) VCC 36V SO-28 1. Total resistance of one side in bridge configuration 2. Typical current limitation value General features - Inrush current management by active power limitation on the high side switches - Very low stand-by current - Very low electromagnetic susceptibility - In compliance with the 2002/95/EC European directive Protection - High side drivers undervoltage shutdown - Overvoltage clamp - Output current limitation - High and low side overtemperature shutdown - Short circuit protection - ESD protection Diagnostic functions - Proportional load current sense - Thermal shutdown indication on both the high and low side switches VIPowerTM M0-3 OMNIFET II. This device is suitable to drive a DC motor in a bridge configuration as well as to be used as a quad switch for any low voltage application. The dual high side switches integrate built-in nonlatching thermal shutdown with thermal hysteresis. An output current limiter protects the device in overload condition. In the case of long overload duration, the device limits the dissipated power to a safe level up to thermal shut-down intervention. An analog current sense pin delivers a current proportional to the load current (according to a known ratio) and indicates overtemperature shutdown of the relevant high side switch through a voltage flag. The low side switches have built-in non-latching thermal shutdown with thermal hysteresis, linear current limitation and overvoltage clamping. Fault feedback for overtemperature shutdown of the low side switch is indicated by the relevant input pin current consumption going up to the fault sink current flag. Description The VN5770AK-E is a device formed by three monolithic chips housed in a standard SO-28 package: a double high side and two low side switches. The double high side is made using STMicroelectronics VIPowerTM M0-5 Technology, while the low side switches are fully protected Table 1. Order codes Package SO-28 Tube Applications DC motor driving in full or half bridge configuration All types of resistive, inductive and capacitive loads Tape and Reel VN5770AKTR-E VN5770AK-E February 2007 Rev 2 1/31 www.st.com 31 Contents VN5770AK-E Contents 1 2 Block diagram and pin descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 3.1 3.2 Electrical characteristics for dual high side switch . . . . . . . . . . . . . . . . . . . 9 Electrical characteristics for low side switches . . . . . . . . . . . . . . . . . . . . . 15 4 Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4.1 Maximum demagnetization energy (VCC = 13.5V) . . . . . . . . . . . . . . . . . . 22 5 Package and thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 5.1 SO-28 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 6 Package mechanical . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 6.1 SO-28 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 2/31 VN5770AK-E List of tables List of tables Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Table 8. Table 9. Table 10. Table 11. Table 12. Table 13. Table 14. Table 15. Table 16. Table 17. Table 18. Table 19. Table 20. Table 21. Table 22. Table 23. Table 24. Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pin descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Thermal Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Dual high side switch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Low side switch. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Power section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Switching (VCC=13V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Logic input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Protection and diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Current sense (8V List of figures VN5770AK-E List of figures Figure 1. Figure 2. Figure 3. Figure 4. Figure 5. Figure 6. Figure 7. Figure 8. Figure 9. Figure 10. Figure 11. Figure 12. Figure 13. Figure 14. Figure 15. Figure 16. Figure 17. Figure 18. Figure 19. Figure 20. Figure 21. Figure 22. Figure 23. Figure 24. Figure 25. Figure 26. Figure 27. Figure 28. Figure 29. Figure 30. Figure 31. Figure 32. Figure 33. Figure 34. Figure 35. Figure 36. Figure 37. Figure 38. Figure 39. Figure 40. Figure 41. Figure 42. Figure 43. Figure 44. Figure 45. Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Configuration diagram (Top view). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Switching time waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Output voltage drop limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Current sense delay characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Off state output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 High level input current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Input clamp voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Input low level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Input high level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Input hysteresis voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 On state resistance vs. Tcase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 On state resistance vs. VCC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Undervoltage shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Turn-on voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 ILIMH Vs. Tcase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Turn-off voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Static drain source on resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Derating curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Transfer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Input voltage vs. input charge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Capacitance variations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Step response current limit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Source-drain diode forward characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Static drain-source on resistance vs. Id . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Static drain-source on resistance vs. input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Static drain-source on resistance vs. input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Normalized input threshold voltage vs. temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Normalized on resistance vs. temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Current limit vs. junction temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Typical application schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Recommended motor operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Maximum turn off current versus load inductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 SO-28 PC board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Chipset configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Auto and mutual Rthj-amb vs PCB copper area in open box free air condition . . . . . . . . . 23 SO-28 HSD thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . . . . . . . 25 SO-28 LSD thermal impedance junction ambient single pulse. . . . . . . . . . . . . . . . . . . . . . 25 Thermal fitting model of an H-Bridge in SO-28 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 SO-28 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 SO-28 tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Tape and reel shipment (suffix "TR") . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 4/31 VN5770AK-E Block diagram and pin descriptions 1 Block diagram and pin descriptions Figure 1. Block diagram Vcc Vcc clamp Undervoltage GND INPUT1 Driver 1 Clamp 2 INPUT2 Overtemp. 1 Power limitation Overtemp. 2 Power limitation IDS1 IDS2 Overvoltage Clamp Logic Current limiter 1 Vds limiter 1 Current limiter 2 VDS limiter 2 Driver 2 SOURCE2 Clamp 1 SOURCE1 K C.SENSE K DRAIN3 INPUT3 Gate Control SOURCE3 Linear Current Limiter Over Temperature Overvoltage Clamp DRAIN4 INPUT4 Gate Control SOURCE4 Linear Current Limiter Over Temperature 5/31 Block diagram and pin descriptions Table 2. No 1, 3, 25, 28 2 4, 11 5, 10, 19, 24 6 7 8 9 VN5770AK-E Pin descriptions NAME DRAIN 3 INPUT 3 N.C. VCC GND INPUT 1 INPUT 2 CURRENT SENSE FUNCTION Drain of Switch 3 (low-side switch) Input of Switch 3 (low-side switch) Not Connected Drain of Switches 1 and 2 (high-side switches) and Power Supply Voltage Ground of Switches 1 and 2 (high-side switches) Input of Switch 1 (high-side switches) Input of Switch 2 (high-side switch) Analog current sense pin, delivers a current proportional to the load current Drain of switch 4 (low-side switch) Input of Switch 4 (low-side switch) Source of Switch 4 (low-side switch) Source of Switch 2 (high-side switch) Source of Switch 1 (high-side switch) Source of Switch 3 (low-side switch) 12, 14, 15, 18 DRAIN 4 13 16, 17 20, 21 22, 23 26, 27 INPUT 4 SOURCE 4 SOURCE 2 SOURCE 1 SOURCE 3 Figure 2. Configuration diagram (Top view) 6/31 VN5770AK-E Maximum ratings 2 Maximum ratings Stressing the device above the rating listed in the "Absolute maximum ratings" table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to the conditions in Section 2.1: Absolute maximum ratings for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality document. 2.1 Absolute maximum ratings Table 3. Symbol Rthj-case Rthj-case Rthj-amb Thermal Data Parameter Thermal Resistance Junction-lead (High-side switch) Thermal Resistance Junction-lead (Low-side switch) Thermal Resistance Junction-ambient. Max value 10 7 See Figure 38 Unit C/W C/W C/W Table 4. Symbol VCC -VCC - IGND IOUT - IOUT IIN ICSD Dual high side switch Parameter DC supply voltage Reverse DC supply voltage DC reverse ground pin current DC output current Reverse DC output current DC input current DC current sense disable input current Value 41 0.3 200 Internally limited -12 -1 to 10 -1 to 10 VCC-41 +VCC 32 Unit V V mA A A mA mA V V mJ VCSENSE Current sense maximum voltage EMAX Maximum switching energy (single pulse) (L=3.7mH; RL=0; Vbat=13.5V; Tjstart=150C; IOUT = IlimL(Typ.) ) Electrostatic Discharge (Human Body Model: R=1.5K; C=100pF) - INPUT - CURRENT SENSE - OUTPUT - VCC Charge device model (CDM-AEC-Q100-011) Junction operating temperature Storage temperature VESD 4000 2000 5000 5000 750 -40 to 150 -55 to 150 V V V V V C C VESD Tj Tstg 7/31 Maximum ratings Table 5. Symbol VDSn VINn IINn RIN MINn IDn IRn VESD1 VESD2 Ptot Tj Tc Tstg VN5770AK-E Low side switch Parameter Drain-source Voltage (VINn=0V) Input Voltage Input Current Minimum Input Series Impedance Drain Current Reverse DC Output Current Electrostatic Discharge (R=1.5K, C=100pF) Electrostatic Discharge on output pins only (R=330, C=150pF) Total Dissipation at Tc=25C Operating Junction Temperature Case Operating Temperature Storage Temperature Value Internally Clamped Internally Clamped +/-20 220 Internally Limited -12 4000 16500 4 Internally limited Internally limited -55 to 150 Unit V V mA A A V V W C C C 8/31 VN5770AK-E Electrical characteristics 3 3.1 Note: Electrical characteristics Electrical characteristics for dual high side switch Values specified in this section are for 8V < VCC < 36V; -40C < Tj < 150C, unless otherwise specified (for each channel) Table 6. Symbol VCC VUSD VUSDhyst Power section Parameter Operating supply voltage Undervoltage shutdown Undervoltage shutdown hysteresis IOUT=3A; Tj=25C On state resistance IOUT=3A; Tj=150C IOUT=3A; VCC=5V; Tj=25C Clamp Voltage Supply current IS=20 mA Off State; VCC=13V; Tj=25C; VIN=VOUT=VSENSE=0V On State; VCC=13V; VIN=5V; IOUT=0A VIN=VOUT=0V; VCC=13V; Tj=25C VIN=VOUT=0V; VCC=13V; Tj=125C 0 0 41 46 2(1) 3 Test Conditions Min. 4.5 Typ. 13 3.5 0.5 160 320 210 52 5(1) 6 3 5 0.7 Max. 36 4.5 Unit V V V m m m V A mA A V RON Vclamp IS IL(off) VF Off state output current(2) Output - VCC diode -IOUT=3A; Tj=150C voltage(2) 1. PowerMOS leakage included 2. For each channel Table 7. Symbol td(on) td(off) Switching (VCC=13V) Parameter Turn-on delay time Turn-off delay time Turn-on voltage slope Turn-off voltage slope Switching energy losses during twon Switching energy losses during twoff Test Conditions RL=4.3 (see Figure 3.) RL=4.3 (see Figure 3.) RL=4.3 RL=4.3 RL=4.3 (see Figure 3.) RL=4.3 (see Figure 3.) Min. Typ. 15 10 See Figure 15 See Figure 17. 0.16 0.08 Max. Unit s s V/s V/s mJ mJ (dVOUT/dt)on (dVOUT/dt)off WON WOFF 9/31 Electrical characteristics Table 8. Symbol VIL IIL VIH IIH VI(hyst) VICL VN5770AK-E Logic input Parameter Input low level voltage Low level input current Input high level voltage High level input current VIN=2.1V Input hysteresis voltage Input clamp voltage IIN=1mA IIN=-1mA 0.25 5.5 -0.7 7 VIN=0.9V 1 2.1 10 Test Conditions Min. Typ. Max. 0.9 Unit V A V A V V V Table 9. Symbol IlimH IlimL TTSD TR TRS THYST VDEMAG Protection and diagnostics(1) Parameter DC Short circuit current Short circuit current during thermal cycling Shutdown temperature Reset temperature Thermal reset of STATUS Thermal hysteresis (TTSD-TR) Turn-off output voltage clamp Output voltage drop limitation IOUT=1A; VIN=0; L=20mH IOUT=0.03A; Tj=-40C to 150C (see Figure 4.) Test Conditions VCC=13V 5V TRS + 1 TRS + 5 135 VON 25 mV 1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals must be used together with a proper software strategy. If the device is subjected to abnormal conditions, this software must limit the duration and number of activation cycles Table 10. Symbol K0 Current sense (8V 1450 2020 K1 IOUT/ISENSE 940 1360 1900 1040 1360 1680 1200 1270 1350 1180 1260 1330 K2 K3 IOUT/ISENSE IOUT/ISENSE 10/31 VN5770AK-E Table 10. Symbol Electrical characteristics Current sense (8V ISENSE0 0 0 5 1 2 VSENSE VSENSEH Analog sense output voltage in VCC=13V; RSENSE=3.9K overtemperature condition Analog sense output current in VCC=13V overtemperature condition VSENSE<4V, 0.35A V ISENSEH 8 mA Delay Response tDSENSE2H time from rising edge of INPUT pin Delay Response tDSENSE2L time from falling edge of INPUT pin 70 300 s 100 250 s Figure 3. Switching time waveforms VOUTn 90% 80% dVOUT/dt(on) 10% dVOUT/dt(off) t VINn td(on) td(off) t 11/31 Electrical characteristics Figure 4. Output voltage drop limitation Vcc-Vout Tj=150oC Tj=25oC Tj=-40oC VN5770AK-E Von Iout Von/Ron(T) Table 11. Truth table INPUT L H L H L H L H L H L OUTPUT L H L L L L L L H H L SENSE 0 Nominal 0 VSENSEH 0 0 0 0 0 < Nominal 0 CONDITIONS Normal operation Overtemperature Undervoltage Short circuit to GND Short circuit to VCC Negative output voltage clamp Figure 5. Current sense delay characteristics INPUT LOAD CURRENT SENSE CURRENT tDSENSE2H tDSENSE2L 12/31 VN5770AK-E Electrical characteristics Figure 6. Iloff (uA) 0.07 Off state output current Figure 7. Iih (uA) 5 4.5 High level input current 0.06 Vin=2.1V Off State Vcc=13V Vin=Vout=0V 4 3.5 3 0.05 0.04 0.03 TBD 2.5 2 1.5 1 0.02 0.01 0.5 0 -50 -25 0 25 50 75 100 125 150 175 0 -50 -25 0 25 50 75 100 125 150 175 Tc (C) Tc (C) Figure 8. Vicl (V) 7 6.8 Input clamp voltage Figure 9. Vil (V) 2 1.8 Input low level lin=1mA 6.6 6.4 6.2 6 5.8 5.6 5.4 5.2 5 -50 -25 0 25 50 75 100 125 150 175 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 175 Tc (C) Tc (C) Figure 10. Input high level Vih (V) 4 3.5 3 Figure 11. Input hysteresis voltage Vihyst (V) 1 0.9 0.8 0.7 2.5 2 1.5 1 0.6 0.5 0.4 0.3 0.2 0.5 0 -50 -25 0 25 50 75 100 125 150 175 0.1 0 -50 -25 0 25 50 75 100 125 150 175 Tc (C) Tc (C) 13/31 Electrical characteristics VN5770AK-E Figure 12. On state resistance vs. Tcase Ron (mOhm) 300 Figure 13. On state resistance vs. VCC Ron (mOhm) 400 350 250 Iout=3A Vcc=13V Iout=3A 300 250 200 200 Tc=150 C Tc=125 C 150 150 100 Tc=25 C Tc=-40 C 100 50 50 -50 -25 0 25 50 75 100 125 150 175 0 0 5 10 15 20 25 30 35 40 Tc (C) Vcc (V) Figure 14. Undervoltage shutdown Vusd (V) 16 14 12 Figure 15. Turn-on voltage slope (dVout/dt)on (V/ms) 1000 900 800 700 10 8 6 4 600 500 400 300 200 Vcc=13V RI=4.3Ohm 2 0 -50 -25 0 25 50 75 100 125 150 175 100 0 -50 -25 0 25 50 75 100 125 150 175 Tc (C) Tc (C) Figure 16. ILIMH Vs. Tcase Ilimh (A) 20 18 Figure 17. Turn-off voltage slope (dVout/dt)off (V/ms) 1500 1400 Vcc=13V 16 14 12 10 8 6 4 2 0 -50 -25 0 25 50 75 100 125 150 175 1300 1200 1100 Vcc=13V RI=4.3Ohm TBD 1000 900 800 700 600 500 -50 -25 0 25 50 75 100 125 150 175 Tc (C) Tc (C) 14/31 VN5770AK-E Electrical characteristics 3.2 Note: Electrical characteristics for low side switches Values specified in this section are for -40C < Tj < 150C, unless otherwise specified Table 12. Symbol VCLAMP VCLTH VINTH IISS VINCL Off Parameter Drain-source Clamp Voltage Drain-source Clamp Threshold Voltage Input Threshold Voltage Supply Current from Input Pin Input-Source Clamp Voltage Zero Input Voltage Drain Current (VIN=0V) Test Conditions VIN=0V; ID=1.5A VIN=0V; ID=2mA VDS=VIN; ID=1mA VDS=0V; VIN=5V IIN=1mA IIN=-1mA VDS=13V; VIN=0V; Tj=25C VDS=25V; VIN=0V 6 -1.0 Min 40 36 0.5 100 6.8 2.5 150 8 -0.3 30 75 Typ 45 Max 55 Unit V V V A V IDSS A Table 13. Symbol RDS(on) On Parameter Static Drain-source On Resistance Test Conditions VIN=5V; ID=3A; Tj=25C VIN=5V; ID=3A Min Typ Max 120 240 Unit m Table 14. Symbol gfs COSS Dynamic (Tj=25C, unless otherwise specified) Parameter Forward Transconductance Output Capacitance Test Conditions VDD=13V; ID=1.5A VDS=13V; f=1MHz; VIN=0V Min Typ 2.5 150 Max Unit S pF Table 15. Symbol td(on) tr td(off) tf td(on) tr td(off) tf Switching (Tj=25C, unless otherwise specified) Parameter Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time VDD=15V; ID=3A Vgen=5V; Rgen=2.2K VDD=15V; ID=3A Vgen=5V; Rgen=RIN MINn=220 Test Conditions Min Typ 200 1.2 600 400 0.80 3.7 2.6 2.3 Max 400 2.5 1350 1000 2.5 7.5 7.5 7.0 Unit ns s ns ns s s s s 15/31 Electrical characteristics Table 15. Switching (Tj=25C, unless otherwise specified) 3.0 VN5770AK-E VDD=15V; ID=3A (dI/dt)on Turn-on Current Slope Vgen=5V; Rgen=RIN MINn=220 Qi Total Input Charge VDD=12V; ID=3A; VIN=5V Igen =2.13mA A/s 9.0 nC Table 16. Symbol VSD(1) trr Qrr IRRM Source drain diode Parameter Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD=1.5A; dI/dt=12A/ms VDD=30V; L=200H Test Conditions ISD=1.5A; VIN=0V Min Typ 0.8 400 200 1.0 Max Unit V ns nC A 1. Pulsed: Pulse duration = 300s, duty cycle 1.5% 16/31 VN5770AK-E Table 17. Symbol Ilim tdlim Tjsh Tjrs Igf Eas Electrical characteristics Protection and diagnostics (-40C < Tj < 150C, unless otherwise specified) Parameter Drain Current Limit Step Response Current Limit Overtemperature Shutdown Overtemperature Reset Fault Sink Current Single Pulse Avalanche Energy VIN=5V; VDS=13V; Tj=Tjsh starting Tj=25C; VDD=24V VIN=5V; Rgen=RIN MINn=220; L=24mH Test Conditions VIN=5V; VDS=13V VIN=5V; VDS=13V 150 135 10 100 15 20 Min 6 Typ 8.5 10 175 200 Max 12 Unit A s C C mA mJ Figure 18. Static drain source on resistance Rds(on) (mohms) 1000 900 800 700 600 500 400 300 Figure 19. Derating curve Tj=-40C Vin=2.5V Tj=25C TBD Tj=150C 200 100 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 Id(A) Figure 20. Transconductance Gfs (S) 11 10 9 8 7 6 5 Figure 21. Transfer characteristics Idon (A) 6 5.5 Vds=13V Tj=-40C Tj=25C Tj=150C 5 4.5 4 Vds=13.5V Tj=150C 3.5 3 2.5 Tj=-40C 4 3 2 1 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 2 1.5 1 0.5 0 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 Tj=25C Id (A) Vin (V) 17/31 Electrical characteristics VN5770AK-E Figure 22. Input voltage vs. input charge Vin (V) 9 8 7 6 5 Figure 23. Capacitance variations C(pF) 350 Vds=1V Id=1.5A 300 f=1MHz Vin=0V 250 200 4 3 2 150 100 1 0 0 1 2 3 4 5 6 7 8 9 10 11 50 0 5 10 15 20 25 30 35 Qg (nC) Vds(V) Figure 24. Output characteristics Id (A) 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 1 2 3 4 5 6 7 8 9 10 Vin=3V Vin=5V Vin=4V Figure 25. Step response current limit Tdlim(usec) 13 12.5 12 11.5 11 10.5 Vin=5V Rg=220ohm TBD 10 9.5 9 8.5 8 7.5 5 7.5 10 12.5 15 17.5 20 22.5 25 27.5 30 32.5 Vds (V) Vdd(V) Figure 26. Source-drain diode forward characteristics Vsd (mV) 1100 1050 Figure 27. Static drain-source on resistance vs. Id Rds(on) (mohms) 250 225 Vin=0V 1000 950 900 850 800 750 700 650 600 0 1 2 3 4 5 6 7 8 9 10 11 12 Vin=5V 200 175 150 125 100 75 50 25 0 0 0.5 1 1.5 2 2.5 3 3.5 4 Tj=150C Tj=25C Tj= - 40C Id (A) Id (A) 18/31 VN5770AK-E Electrical characteristics Figure 28. Static drain-source on resistance vs. input voltage Rds(on) (mohms) 300 275 250 225 200 175 150 125 100 75 50 25 0 3 3.5 4 4.5 5 5.5 6 6.5 Id=3.5A Id=1A Figure 29. Static drain-source on resistance vs. input voltage Rds(on) (mohms) 250 225 200 Id=1.5A Tj=150C 175 150 125 Tj=150C Tj=25C Tj=-40C 100 Id=3.5A Id=1A Id=3.5A Id=1A 75 50 Tj=25C Tj=-40C 25 0 3 3.5 4 4.5 5 5.5 6 6.5 Vin(V) Vin(V) Figure 30. Normalized input threshold voltage Figure 31. Normalized on resistance vs. vs. temperature temperature Vinth (V) 2 1.8 1.6 1.6 1.4 1.2 1 0.8 1 0.6 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 175 0.6 -50 -25 0 25 50 75 100 125 150 175 0.8 1.2 Ron (mOhm) 1.8 Iout=3A Vcc=13V Vds=Vin Id=1mA 1.4 Tc (C) Tc (C) Figure 32. Current limit vs. junction temperature Ilim (A) 12 10 Vcc=13V Vin=5V 8 6 4 2 0 -50 -25 0 25 50 75 100 125 150 175 Tc (C) 19/31 Application information VN5770AK-E 4 Application information Figure 33. Typical application schematic D 5V Vcc C Z Vz 32V > 40V Vbatt Input 1 Source 1 Input 2 Current Sense Source 2 Micro Input 3 Control Source 3 Drain 4 Input 4 Control Source 4 IM Drain 3 Motor inducuctance energy recirculation Control M GND Mostly motor bridge drivers use a reverse battery protection diode (D) inside supply rail. This diode prevents a reverse current flow back to Vbatt in case the bridge gets disabled via the logic inputs while motor inductance still carries energy. In order to prevent a hazardous overvoltage at circuit supply terminal (Vcc), a blocking capacitor (C) is needed to limit the voltage overshoot. As basic orientation, 50F per 1A load current in recommended. In alternative, also a Zener protection (Z) is suitable. Even if a reverse polarity diode is not present, it is recommended to use a capacitor or zener at Vcc because a similar problem appears in case supply terminal of the module has intermittent electrical contact to the battery or gets disconnected while motor is operating. Figure 34. Recommended motor operation se io n op wi st at at er op is e kw oc Cl Ac tiv e m ot or io n op st Co op unt er er at cl io o c n k er or op or ot is e m kw iv e oc ss In p u t 1 In p u t 2 In p u t 3 In p u t 4 Vz F ly b a ck c la m p e d b y Z e n e r d io d e Z Pa Cl F ly b a ck e n e rg y c h a rg e d in to c a p a c ito r C Pa ss iv e m ot F ly b a ck s p ik e d u rin g c ro s s c u rre n t p ro te c tio n tim e V cc t +I M st op t -IM D e a d tim e to a v o id c ro ss c o n d u c tio n 20/31 VN5770AK-E Figure 35. Waveforms Application information NORMAL OPERATION INPUT CS_DIS LOAD CURRENT SENSE CURRENT UNDERVOLTAGE VUSDhyst VUSD VCC INPUT CS_DIS LOAD CURRENT SENSE CURRENT SHORT TO VCC INPUT CS_DIS LOAD VOLTAGE LOAD CURRENT SENSE CURRENT current power limitation limitation thermal cycling SHORTED LOAD NORMAL LOAD 21/31 Application information VN5770AK-E 4.1 Maximum demagnetization energy (VCC = 13.5V) Figure 36. Maximum turn off current versus load inductance ILMAX (A) 100 10 1 A = Single Pulse at TJstart=150C B= Repetitive pulse at TJstart=100C C= Repetitive Pulse at TJstart=125C A B C 0.1 0.01 0.1 1 10 100 L (mH) VIN, IL Demagnetization Demagnetization Demagnetization t Note: Values are generated with RL=0 In the case of repetitive pulses, Tjstart (at beginning of each demagnetization) of every pulse must not exceed the temperature specified above for curves B and C. 22/31 VN5770AK-E Package and thermal data 5 5.1 Package and thermal data SO-28 thermal data Figure 37. SO-28 PC board Layout condition of Rth and Zth measurements (PCB FR4 area= 58mm x 58mm, PCB thickness=2mm, Cu thickness=35mm, Copper areas: from minimum pad layout to 16cm2). Figure 38. Chipset configuration RthAB HIGH SIDE CHIP channels 1,2 LOW SIDE CHIP channel 3 RthAC LOW SIDE CHIP channel 4 RthA RthBC RthB RthC Figure 39. Auto and mutual Rthj-amb vs PCB copper area in open box free air condition(a) Rth (C/W) 60 50 40 30 20 10 0 0 1 2 3 4 5 RthA RthB = RthC RthAB = RthAC RthBC 6 7 Cu Area (refer to PCB layout) a. See Figure 38. For more detailed information see Table 18 and Table 19. 23/31 Package and thermal data Table 18. HS1 ON OFF HS2 OFF ON VN5770AK-E Thermal calculations in clockwise and anti-clockwise operation in steadystate mode LS3 OFF ON LS4 ON OFF TjHS12 TjLS3 TjLS4 PdHS1 x RthHS + PdLS4 x PdHS1 x RthHSLS + PdHS1 x RthHSLS + RthHSLS + Tamb PdLS4 x RthLSLS + Tamb PdLS4 x RthLS + Tamb PdHS2 x RthHS + PdLS3 x PdHS2 x RthHSLS + RthHSLS + Tamb PdLS3 x RthLS + Tamb PdHS2 x RthHSLS + PdLS3 x RthLSLS + Tamb Table 19. Thermal resistances definitions(1) High side chip thermal resistance junction to ambient (HS1 or HS2 in ON state) Low side chip thermal resistance junction to ambient Mutual thermal resistance junction to ambient between high side and low side chips Mutual thermal resistance junction to ambient between low side chips RthHS = RthHS1 = RthHS2 RthLS = RthLS3 = RthLS4 RthHSLS = RthHS1LS4 = RthHS2LS3 RthLSLS = RthLS3LS4 1. values dependent on PCB heatsink area Table 20. ZthHS Single pulse thermal impedance definitions(1) High Side Chip Thermal Impedance Junction to Ambient Low Side Chip Thermal Impedance Junction to Ambient Mutual Thermal Impedance Junction to Ambient between High Side and Low Side Chips Mutual Thermal Impedance Junction to Ambient between Low Side Chips ZthLS = ZthLS3 = ZthLS4 ZthHSLS = ZthHS12LS3 = ZthHS12LS4 ZthLSLS = ZthLS3LS4 1. values dependent on PCB heatsink area Table 21. TjHS12 TjLS3 TjLS4 Thermal calculations in transient mode(1) ZthHS x PdHS12 + ZthHSLS x (PdLS3 + PdLS4) + Tamb ZthHSLS x PdHS12 + ZthLS x PdLS3 + ZthLSLS x PdLS4 + Tamb ZthHSLS x PdHS12 + ZthLSLS x PdLS3 + ZthLS x PdLS4 + Tamb 1. Calculation is valid in any dynamic operating condition. Pd values set by user. 24/31 VN5770AK-E Package and thermal data Figure 40. SO-28 HSD thermal impedance junction ambient single pulse ZTH (C/W) 100 Footprint 1 cm2 2 cm2 6 cm2 Footprint 1 cm2 10 HSD 2 cm2 6 cm2 1 HsLsD 0.1 0.001 0.01 0.1 1 10 100 1000 time (sec) Figure 41. SO-28 LSD thermal impedance junction ambient single pulse ZTH (C/W) 100 Footprint 1 cm2 2 cm2 6 cm2 10 LSD Footprint 1 cm2 2 cm2 6 cm2 LsLsD 0.1 0.001 0.01 0.1 1 10 100 1000 time (sec) Pulse Calculation Formula Z TH = R TH + Z THtp ( 1 - ) where = tp T 25/31 Package and thermal data Figure 42. Thermal fitting model of an H-Bridge in SO-28 VN5770AK-E Table 22. Thermal parameters(1) Footprint 1 1.8 3.5 13.5 10.5 62.28 1 1.8 0.24 1.2 3.5 15.2 10.5 62.28 0.24 1.2 3.5 15.5 10.5 52.28 44.28 32.28 52.28 44.28 32.28 1 2 6 Area/island (cm2) R1 (C/W) R2 (C/W) R3 (C/W) R4 (C/W) R5 (C/W) R6 (C/W) R7 (C/W) R8 (C/W) R9 (C/W) R10 (C/W) R11 (C/W) R12 (C/W) R13 (C/W) R14 (C/W) R15 (C/W) R16 (C/W) R17 (C/W) R18 (C/W) R19 (C/W) 26/31 VN5770AK-E Table 22. Thermal parameters(1) 62.28 150 150 150 150 0.0008 0.001 0.008 0.2 1.6 0.0008 0.001 0.00015 0.0005 0.008 0.2 1.6 0.00015 0.0005 0.008 0.2 1.6 1.61 1.61 1.61 52.28 52.28 Package and thermal data R20 (C/W) R21 (C/W) R22 (C/W) R23 (C/W) R24 (C/W) C1 (W*s/C) C2 (W*s/C) C3 (W*s/C) C5 (W*s/C) C6 (W*s/C) C7 (W*s/C) C8 (W*s/C) C9 (W*s/C) C10 (W*s/C) C11 (W*s/C) C13 (W*s/C) C14 (W*s/C) C15 (W*s/C) C16 (W*s/C) C17 (W*s/C) C19 (W*s/C) C20 (W*s/C) 44.28 32.28 44.28 32.28 1.7 3.25 1.7 3.25 1.7 3.25 1. A blank space means that the value is the same as the previous one 27/31 Package mechanical VN5770AK-E 6 6.1 Package mechanical SO-28 mechanical data Table 23. SO-28 mechanical data millimeters Symbol Min A a1 b b1 C c1 D E e e3 F L S 7.40 0.40 8 (max.) 17.7 10.00 1.27 16.51 7.60 1.27 0.10 0.35 0.23 0.50 45 (typ.) 18.1 10.65 Typ Max 2.65 0.30 0.49 0.32 Figure 43. SO-28 package dimensions 28/31 VN5770AK-E Figure 44. SO-28 tube shipment (no suffix) Base Q.ty Bulk Q.ty C B Package mechanical 28 700 532 3.5 13.8 0.6 Tube length ( 0.5) A B A C ( 0.1) Figure 45. Tape and reel shipment (suffix "TR") REEL DIMENSIONS Base Q.ty Bulk Q.ty A (max) B (min) C ( 0.2) F G (+ 2 / -0) N (min) T (max) 1000 1000 330 1.5 13 20.2 16.4 60 22.4 TAPE DIMENSIONS According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb. 1986 Tape width Tape Hole Spacing Component Spacing Hole Diameter Hole Diameter Hole Position Compartment Depth Hole Spacing W P0 ( 0.1) P D ( 0.1/-0) D1 (min) F ( 0.05) K (max) P1 ( 0.1) 16 4 12 1.5 1.5 7.5 6.5 2 End All dimensions are in mm. Start Top cover tape No components Components 500mm min No components 500mm min Empty components pockets sealed with cover tape. User direction of feed 29/31 Revision history VN5770AK-E 7 Revision history Table 24. Date June-2006 Document revision history Revision 1 Initial release. Reformatted. Table 6: Power section updated. Table 7: Switching (VCC=13V) updated. Table 10: Current sense (8V 2 30/31 VN5770AK-E Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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