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| N-CHANNEL 30V - 0.0027 - 100A PowerSO-8TM STripFETTM III POWER MOSFET FOR DC-DC CONVERSION TYPE STSJ100NH3LL s s s s s STSJ100NH3LL PRELIMINARY DATA VDSS 30 V RDS(on) <0.0035 ID 100 A TYPICAL RDS(on) = 0.0027 @ 10V OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5V CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED IMPROVED JUNCTION-CASE THERMAL RESISTANCE PowerSO-8TM DESCRIPTION The STSJ100NH3LL utilizes the latest advanced design rules of ST's proprietary STripFETTM technology. This process compled to unique metallization techniques realizes the most advanced low voltage MOSFET in SO-8 ever produced. The exposed slug reduces the R thj-c improving the current capability. APPLICATIONS s SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS FOR MOBILE PCS INTERNAL SCHEMATIC DIAGRAM DRAIN CONTACT ALSO ON THE BACKSIDE ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID ID IDM(*) Ptot Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 25C (#) Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Total Dissipation at TC = 25C (#) Value 30 30 18 100 22 62.5 400 70 3 Unit V V V A A A A W W (*) Pulse width limited by safe operating area. September 2003 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/6 STSJ100NH3LL THERMAL DATA Rthj-c Rthj-amb Tj Tstg Thermal Resistance Junction-case (#)Thermal Resistance Junction-ambient Maximum Operating Junction Temperature Storage Temperature Max Max 1.8 42 150 -55 to 150 C/W C/W C C (#) When Mounted on FR-4 board with 1 inch2 pad, 2 oz of Cu and t [ 10 sec. ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol V(BR)DSS IDSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125C VGS = 18 V Min. 30 1 10 100 Typ. Max. Unit V A A nA IGSS ON (*) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V VGS = 4.5 V ID = 250 A ID = 50 A ID = 50 A Min. 1 0.0027 0.0035 0.0035 0.005 Typ. Max. Unit V DYNAMIC Symbol gfs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS=10 V ID = 12 A Min. Typ. 30 4450 655 50 Max. Unit S pF pF pF VDS = 25V, f = 1 MHz, VGS = 0 2/6 STSJ100NH3LL ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions ID = 50 A VDD = 15 V RG = 4.7 VGS = 10 V (Resistive Load, Figure 1) VDD=15V ID=100A VGS=4.5V (see test circuit, Figure 2) Min. Typ. 18 50 32 12.5 10 43 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions ID = 50 A VDD = 15 V RG = 4.7, VGS = 10 V (Resistive Load, Figure 3) Min. Typ. 75 8 Max. Unit ns ns SOURCE DRAIN DIODE Symbol ISD ISDM VSD (*) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 100 A VGS = 0 32 34 2.1 Test Conditions Min. Typ. Max. 100 400 1.2 Unit A A V ns nC A di/dt = 100A/s ISD = 100 A VDD = 25 V Tj = 150C (see test circuit, Figure 3) (*)Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. (*)Pulse width limited by safe operating area. 3/6 STSJ100NH3LL Fig. 1: Switching Times Test Circuits For Resistive Load Fig. 2: Gate Charge test Circuit Fig. 3: Test Circuit For Diode Recovery Behaviour 4/6 STSJ100NH3LL 5/6 STSJ100NH3LL Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6 |
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