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 STRH40N25FSY3
N-channel 250V - 0.084 - TO-254AA Rad-hard low gate charge STripFETTM Power MOSFET
PRELIMINARY DATA
Features
Type STRH40N25FSY3

VDSS 250V
Low RDS(on) Fast switching Single event effect (SEE) hardened Low total gate charge Light weight 100% avalanche tested Application oriented characterization Hermetically sealed Heavy ion SOA 100kRad TID SEL & SEGR with 34Mev/cm/mg LET ions
TO-254AA
Internal schematic diagram
Description
This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to improve immunity to space effect. It is therefore suitable as power switch in mainly high-efficiency DC-DC converters and Motor Control applications. It is also intended for any application with low gate charge drive requirements.
Applications

Satellite High reliability applications
Order codes
Part number STRH40N25FSY1 STRH40N25FSY3
1. Mil temp range 2. Space flights parts (full ESA flow screening)
(1) (2)
Marking RH40N25FSY1 RH40N25FSY3
Package TO-254AA TO-254AA
Packaging Individual strip pack Individual strip pack
March 2007
Rev 2
1/13
www.st.com 13
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
Contents
STRH40N25FSY3
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 2.2 Pre-irradiation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Post-irradiation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 4 5
Test circuit
................................................ 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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STRH40N25FSY3
Electrical ratings
1
Electrical ratings
Table 1.
Symbol VDS VGS ID
(1)
Absolute maximum ratings (pre-irradiation)
Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC= 25C Drain current (continuous) at TC= 100C Drain current (pulsed) Total dissipation at TC= 25C Peak diode recovery voltage slope Storage temperature Max. operating junction temperature Value 250 16 36 23 144 278 4 -55 to 150 150 Unit V V A A A W V/ns C C
ID (1) IDM (2) PTOT
(1)
dv/dt (3) Tstg Tj
1. Rated according to the Rthj-case 2. Pulse width limited by safe operating area 3. ISD < 40A, di/dt < 400A/s, VDD = 80% V(BR)DSS
Table 2.
Symbol
Thermal data
Parameter Value 0.45 0.21 48 Unit C/W C/W C/W
Rthj-case Thermal resistance junction-case Rthc-s Case-to-sink
Rthj-amb Thermal resistance junction -amb
Table 3.
Symbol IAR EAS EAR
Avalanche characteristics
Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25C, Id=Iar, Vdd=50V) Repetitive avalanche Value 40 320 25 Unit A mJ mJ
3/13
Electrical characteristics
STRH40N25FSY3
2
Electrical characteristics
(TCASE = 25C unless otherwise specified)
2.1
Pre-irradiation
Table 4.
Symbol IDSS IGSS BVDSS VGS(th) RDS(on)
On/off states
Parameter Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Drain-to-source breakdown voltage Gate threshold voltage Static drain-source on resistance Test conditions 80% BVDss VGS = 16V ID = 1mA, VGS = 0V VDS =VGS, ID = 1mA VGS = 12V, ID = 20A 250 2 0.084 4.5 0.1 Min. Typ. Max. 10
100
Unit A nA V V
Table 5.
Symbol Ciss Coss Crss Qg Qgs Qgd
Dynamic
Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-to-source charge Gate-to-drain ("Miller") charge Gate input resistance Test conditions Min. Typ. 9100 650 45 202 34 58 280 47 80 Max. Unit pF pF pF nC nC nC
VDS = 0V, f=1MHz, VGS=12V
VDD = 200V, ID = 40A, VGS=12V f=1MHz Gate DC Bias=0 Test signal level=20mV open drain
RG
1.4
3
Table 6.
Symbol td(on) tr td(off) tf
Switching times
Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions Min. Typ. 33 80 123 145 Max Unit ns ns ns ns
VDD = 125V, ID =40 A, RG = 4.7, VGS = 12V
4/13
STRH40N25FSY3
Electrical characteristics
Table 7.
Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 40A, VGS = 0 ISD = 40A, di/dt = 100A/s VDD= 50V, Tj = 150C 484 8.4 35 Test conditions Min. Typ. Max Unit 36 144 1.5 A A V ns C A
1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300s, duty cycle 1.5%
2.2
Post-irradiation
The ST Rad-Hard Power MOSFETs are tested to verify the radiation capability. The technology is extremely resistant to assurance well functioning of the device inside the radiation environments. Every manufacturing lot is tested for total ionizing dose. (@Tj=25C up to 100Krad (a)) Table 8.
Symbol IDSS IGSS BVDSS VGS(th) RDS(on)
On/off states
Parameter Test conditions Min. Typ. Max. 10
100
Unit A nA V
Zero gate voltage drain current 80% BVDss (VGS = 0) Gate body leakage current (VDS = 0) Drain-to-source breakdown voltage Gate threshold voltage Static drain-source on resistance VGS = 16V ID = 1mA, VGS = 0V VDS =VGS, ID = 1mA VGS = 12V, ID = 20A 250 2 0.084
4.5 0.1
V
a. According to ESCC 22900 specification, Co60 gamma rays, dose rags:0.1rad/sec.
5/13
Electrical characteristics
STRH40N25FSY3
Table 9.
Ion Kr Xe
Single event effect, SOA(1)
Let (Mev/(mg/cm2)) 34 55.9 Energy (MeV) 316 459 Range (m) 43 43 VDS (V) @VGS0V 250 244
1. Rad-Hard Power MOSFETs have been characterized in heavy ion environment for single event effect (SEE). Single event effect characterization is illustrated
Table 10.
Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 40A, VGS = 0 ISD = 40A, di/dt = 100A/s VDD= 50V, Tj = 150C 484 8.4 35 Test conditions Min. Typ. Max Unit 36 144 1.5 A A V ns C A
1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300s, duty cycle 1.5%
6/13
STRH40N25FSY3
Electrical characteristics
2.3
Figure 1.
Electrical characteristics (curves)
Safe operating area Figure 2. Thermal impedance
Figure 3.
Output characteristics
Figure 4.
Transfer characteristics
7/13
Electrical characteristics Figure 5. Gate charge vs. gate-source voltage Figure 6.
STRH40N25FSY3 Capacitance variations
Figure 7.
Normalized BVDSS vs. temperature Figure 8.
Static drain-source on resistance
8/13
STRH40N25FSY3 Figure 9. Normalized gate threshold voltage vs. temperature
Electrical characteristics Figure 10. Normalized on resistance vs. temperature
Figure 11. Source drain-diode forward characteristics
9/13
Test circuit
STRH40N25FSY3
3
Test circuit
Figure 12. Switching times test circuit for resistive load (1)
1. Max driver VGS slope = 1V/ns (no DUT)
10/13
STRH40N25FSY3
Package mechanical data
4
Package mechanical data
TO-254AA MECHANICAL DATA
DIM. A B C D E F G H I J K L M N R1 R2 mm. TYP inch TYP.
MIN. 13.59 13.59 20.07 6.32 1.02 3.53 16.89 0.89
MAX. 13.84 13.84 20.32 6.60 1.27 3.78 17.40 1.14
MIN. 0.535 0.535 0.790 0.249 0.040 0.139 0.665 0.035
MAX. 0.545 0.545 0.80 0.260 0.050 0.149 0.685 0.045
6.86 3.81 3.81 12.95 3.05 0.71 1.0 1.65 14.50 0.510
0.270 0.150 0.150 0.570 0.120 0.025 0.040 0.065
11/13
Revision history
STRH40N25FSY3
5
Revision history
Table 11.
Date 18-Dec-2006 02-Mar-2007
Revision history
Revision 1 2 First release Some values changed on Table 4 and Table 8 Changes
12/13
STRH40N25FSY3
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