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STGW40NC60V
N-CHANNEL 50A - 600V TO-247 Hyper Fast PowerMESHTM IGBT
TYPE STGW40NC60V
s s s s s s
VCES 600 V
VCE(sat) (Max)@25C < 2.5 V
IC @100C 50 A
HIGH INPUT IMPEDANCE OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION CO-PACKAGED WITH TURBOSWITCH ANTIPARALLEL DIODE
3 2 1
TO-247
DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The suffix "V" identifies a family optimized for high frequency welding and SMPS applications. APPLICATIONS s HIGH FREQUENCY INVERTERS s SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES s UPS s WELDING INTERNAL SCHEMATIC DIAGRAM
ORDERING INFORMATION
SALES TYPE STGW40NC60V MARKING GW40NC60V PACKAGE TO-247 PACKAGING TUBE
August 2003
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ABSOLUTE MAXIMUM RATINGS
Symbol VCES VECR VGE IC IC ICM ( ) PTOT Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage Gate-Emitter Voltage Collector Current (continuous) at TC = 25C Collector Current (continuous) at TC = 100C Collector Current (pulsed) Total Dissipation at TC = 25C Derating Factor Storage Temperature Max. Operating Junction Temperature Value 600 20 20 80 50 220 260 2.6 - 55 to 125 125 Unit V V V A A A W W/C C C
( )Pulse width limited by safe operating area
THERMAL DATA
Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 0.385 30 C/W C/W
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF
Symbol VBR(CES) ICES IGES Parameter Collector-Emitter Breakdown Voltage Collector cut-off (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Test Conditions IC = 1 mA, VGE = 0 VCE = Max Rating, TC = 25 C VCE = Max Rating, TC = 125 C VGE = 20 V , VCE = 0 Min. 600 250 1000 250 Typ. Max. Unit V A A nA
ON (1)
Symbol VGE(th) VCE(sat) Parameter Gate Threshold Voltage Collector-Emitter Saturation Voltage Test Conditions VCE = VGE, IC = 250 A VGE = 15 V, IC = 40 A, Tj =25C VGE =15 V, IC = 40 A, Tj =125C Min. 3 Typ. 4 1.92 1.7 Max. 5 2.5 Unit V V V
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ELECTRICAL CHARACTERISTICS (CONTINUED) DYNAMIC
Symbol gfs Cies Coes Cres Qg Qge Qgc ICL Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Latching Current VCE = 480 V, IC = 40 A, VGE = 15 V Vclamp = 480 V , Tj = 125C RG = 10 220 Test Conditions VCE = 25 V , IC = 20 A VCE = 25 V, f= 1 MHz, VGE = 0 Min. Typ. 20 4550 350 105 220 30 105 Max. Unit S pF pF pF nC nC nC A
SWITCHING ON
Symbol td(on) tr (di/dt)on Eon Parameter Turn-on Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Test Conditions VCC = 480 V, IC = 40 A RG = 10 , VGE = 15 V VCC= 480 V, IC = 40 A RG= 10 , VGE = 15 V, Tj =125C Min. Typ. 45 27 1150 800 Max. Unit ns ns A/s J
SWITCHING OFF
Symbol tr(Voff) td(off) tf Eoff(**) Ets tr(Voff) td(off) tf Eoff(**) Ets Parameter Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Total Switching Loss Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Total Switching Loss Vcc = 480 V, IC = 40 A, RGE = 10 , VGE = 15 V Tj = 125 C Test Conditions Vcc = 480 V, IC = 40 A, RGE = 10 , VGE = 15 V TJ = 25 C Min. Typ. 37 270 70 1120 1880 67 325 120 1600 2400 Max. Unit ns ns ns
J J
ns ns ns
J J
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by max. junction temperature. (**)Losses include Also the Tail (Jedec Standardization)
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Output Characteristics Transfer Characteristics
Transconductance
Normalized Collector-Emitter On Voltage vs Temp.
Collector-Emitter On Voltage vs Collector Current Gate Threshold vs Temperature
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Normalized Breakdown Voltage vs Temperature Capacitance Variations
Gate Charge vs Gate-Emitter Voltage
Total Switching Losses vs Gate Resistance
Total Switching Losses vs Temperature
Total Switching Losses vs Collector Current
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Thermal Impedance for Max247 Turn-Off SOA
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Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching
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TO-247 MECHANICAL DATA
mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620
DIM. A A1 b b1 b2 c D E e L L1 L2 oP oR S
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. (c) http://www.st.com
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