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| Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1135 IRGBC40M-S INSULATED GATE BIPOLAR TRANSISTOR Features * Short circuit rated - 10s @ 125C, V GE = 15V * Switching-loss rating includes all "tail" losses * Optimized for medium operating frequency (1 to 10kHz) G E C Short Circuit Rated Fast IGBT VCES = 600V VCE(sat) 3.0V @VGE = 15V, I C = 24A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability. SMD-220 Max. 600 40 24 80 80 10 20 15 160 65 -55 to +150 Absolute Maximum Ratings Parameter VCES IC @ T C = 25C IC @ T C = 100C ICM ILM tsc VGE EARV PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Units V A s V mJ W C 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1N*m) Thermal Resistance Parameter RJC RJA RJA Wt Junction-to-Case Junction-to-Ambient, (PCB mount)** Junction-to-Ambient, typical socket mount Weight Min. -- -- -- -- Typ. -- -- -- 2 (0.07) Max. 0.77 40 80 -- Units C/W g (oz) ** When mounted on 1" square PCB (FR-4 or G-10 Material) For recommended footprint and soldering techniques refer to application note #AN-994. Revision 1 C-347 To Order Previous Datasheet Index Next Data Sheet IRGBC40M-S Electrical Characteristics @ T V(BR)CES V(BR)ECS V(BR)CES/TJ J = 25C (unless otherwise specified) Min. Typ. Max. Units Conditions 600 -- -- V VGE = 0V, I C = 250A 20 -- -- V VGE = 0V, IC = 1.0A -- 0.70 -- V/C VGE = 0V, I C = 1.0mA -- 2.0 3.0 IC = 24A V GE = 15V -- 2.6 -- V IC = 40A -- 2.4 -- IC = 24A, T J = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -- -12 -- mV/C VCE = VGE, IC = 250A 9.2 12 -- S VCE = 100V, I C = 24A -- -- 250 A VGE = 0V, V CE = 600V -- -- 1000 VGE = 0V, V CE = 600V, T J = 150C -- -- 100 nA VGE = 20V VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temp. Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) VGE(th)/TJ gfe ICES IGES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Switching Characteristics @ T Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. VCC=80%(V CES), VGE=20V, L=10H, R G= 10 J = 25C (unless otherwise specified) Min. Typ. Max. Units Conditions -- 59 80 IC = 24A -- 8.6 10 nC VCC = 400V -- 25 42 VGE = 15V -- 26 -- TJ = 25C -- 37 -- ns IC = 24A, V CC = 480V -- 240 410 VGE = 15V, R G = 10 -- 230 420 Energy losses include "tail" -- 0.75 -- -- 1.65 -- mJ -- 2.4 3.6 10 -- -- s VCC = 360V, T J = 125C VGE = 15V, R G = 10, VCPK < 500V -- 28 -- TJ = 150C, -- 37 -- ns IC = 24A, V CC = 480V -- 380 -- VGE = 15V, R G = 10 -- 460 -- Energy losses include "tail" -- 4.5 -- mJ -- 7.5 -- nH Measured 5mm from package -- 1500 -- VGE = 0V -- 190 -- pF VCC = 30V -- 20 -- = 1.0MHz Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Refer to Section D for the following: Package Outline 2 - SMD-220 Section D - page D-12 C-348 To Order |
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