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MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD12MVP1
(a) 0.2+/-0.05 0.65+/-0.2 (c) (b) (b) 7.0+/-0.2 8.0+/-0.2 6.2+/-0.2 5.6+/-0.2 (d) 4.2+/-0.2
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W DESCRIPTION
RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. OUTLINE DRAWING
FEATURES
*High Power Gain Pout>10W, Gp>13dB@Vdd=7.2V,f=175MHz *High Efficiency: 55%min. (175MHz) *No gate protection diode
INDEX MARK [Gate]
(3.6)
(4.5)
0.95+/-0.2
2.6+/-0.2
TOP VIEW
DETAIL A
SIDE VIEW
1.8+/-0.1
BOTTOM VIEW
Terminal No. (a)Drain [output] (b)Source [GND] (c)Gate [input] (d)Source
For output stage of high power amplifiers in VHF band mobile radio sets.
SIDE VIEW
Standoff = max 0.05
APPLICATION
0.7+/-0.1
UNIT:mm DETAIL A NOTES: 1. ( ) Typical value
RoHS COMPLIANT
RD12MVP1 is a RoHS compliant product. RoHS compliance is indicating by the letter "G" after the Lot Marking. This product includes the lead in high melting temperature type solders. However, it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders (i.e. tin-lead older alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25C, UNLESS OTHERWISE NOTED)
SYMBOL VDSS VGSS ID Pin Pch Tj Tstg Rthj-c PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current Input Power Channel Dissipation Junction Temperature Storage Temperature Thermal Resistance CONDITIONS VGS=0V VDS=0V Zg=Zl=50 Tc=25C RATINGS 60 -5 to +20 4.0 1.0 125 +150 -40 to +125 1.5 UNIT V V A W W
C C C/W
Junction to Case
Note: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
SYMBOL IDSS IGSS VTH Pout D PARAMETER Zero Gate Voltage Drain Current Gate to Source Leak Current Gate Threshold Voltage Output Power Drain Efficiency
(Tc=25C, UNLESS OTHERWISE NOTED)
CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f=175MHz,VDD=7.2V Pin=0.5W,Idq=1.0A VDD=9.5V,Po=10W(Pin Control) f=175MHz,Idq=1.0A,Zg=50 Load VSWR=20:1(All Phase) MIN. 1.8 10 55 LIMITS TYP. MAX. 10 1.0 4.4 12 57 No destroy UNIT uA uA V W % -
VSWRT Load VSWR tolerance
Note: Above parameters, ratings, limits and conditions are subject to change.
RD12MVP1
MITSUBISHI ELECTRIC 1/7
1st Jun. 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD12MVP1
Vgs-Ids CHARACTERISTICS 7 6 5
Ta=+25C Vds=10V Ids
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W TYPICAL CHARACTERISTICS
60 CHANNEL DISSIPATION Pch(W 50 40 30 20 10 0 0 40 80 120 160 AMBIENT TEMPERATURE Ta(deg:C.) 200
On PCB with Termal sheet and Heat-sink (Size : 41 x 55mm, t=7.2 mm)
DRAIN DISSIPATION VS. AMBIENT TEMPERATURE
*PCB: Glass epoxy (Size : 46.4 x 40.0mm, t=0.8 mm) Thermal sheet: GELTEC COOH-4000(t=0.5mm)
Ids(A)
4 3 2 1 0 0 1 2 3 4 Vgs(V) 5 6 7
Vds-Ids CHARACTERISTICS 9 8 7 6 Ids(A) 5 4 3 2 1 0 0 1 2 3 4 5 Vds(V) 6 7 8 9
Vgs=4.5V Vgs=5.5V Vgs=6.5V Ta=+25C Vgs=7.5V
Vds VS. Ciss CHARACTERISTICS 160 140 120 Ciss(pF) 100 80 60 40 20 0 0 5 10 Vds(V) 15 20
Ta=+25C f=1MHz
Vds VS. Coss CHARACTERISTICS 160 140 120 Coss(pF) Crss(pF) 100 80 60 40 20 0 0 5 10 Vds(V) 15 20
Ta=+25C f=1MHz
Vds VS. Crss CHARACTERISTICS 20 18 16 14 12 10 8 6 4 2 0 0 5 10 Vds(V) 15 20
Ta=+25C f=1MHz
RD12MVP1
MITSUBISHI ELECTRIC 2/7
1st Jun. 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD12MVP1
Pin-Po CHARACTERISTICS @f=175MHz 90
Po
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS @f=175MHz 14 40 Po(dBm) , Gp(dB) , Idd(A)
Ta=+25C f=175MHz Vdd=7.2V Idq=1.0A Po
80
12 Pout(W) , Idd(A) 10 8 6 4 2
80 70 d(%)
d Ta=25C f=175MHz Vdd=7.2V Idq=1.0A Idd
30
Gp
60 d(%)
60 50 40 30 20 1.5
20
40
10
20
0 0 5 10 15 20 Pin(dBm) 25 30
0
0 0.0 0.5 Pin(W) 1.0
Vdd-Po CHARACTERISTICS @f=175MHz 30
Ta=25C f=175MHz Pin=0.6W Idq=1.0A Zg=ZI=50 ohm Po
6
25 20
5
Idd
Po(W)
15 10
3 2
5 4 6 8 Vdd(V) 10 12
1
RD12MVP1
Idd(A)
4
MITSUBISHI ELECTRIC 3/7
1st Jun. 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD12MVP1
Vdd
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W TEST CIRCUIT (f=175MHz)
Vgg
C1 W 19mm 19mm W RD12MVP1 175MHz L2 4.7k Ohm 9.5mm L1 100pF
C2
22uF,50V
RF-in 330pF
47pF 17mm 3.5mm
47pF 14mm
RF-out 330pF
3mm
9.5mm 3mm 24pF 9mm 54pF
Note:Board material= glass-Epoxy Substrate Micro strip line width=1.3mm/50OHM,er=4.8,t=0.8mm W:Line width=1.0mm
L1:10.8nH,4Turns,D:0.43mm,1.66mm(outside diameter) L2:43.7nH,6Turns,D:0.43mm,2.46mm(outside diameter) C1,C2:2200pF
RD12MVP1
MITSUBISHI ELECTRIC 4/7
1st Jun. 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD12MVP1
S22 (ang) -16.8 -20.5 -25.7 -27.3 -31.1 -30.0 -34.0 -30.9 -31.7 -24.1 -20.9 -13.8 -1.5 16.0 35.4 43.3 53.6 58.5 63.6 68.8 73.9 72.4 74.8 79.1 77.0 77.2 79.2 78.9 79.9 78.9 80.1 79.0 79.6 79.3 78.3 80.7 78.8 (mag) 0.743 0.766 0.783 0.799 0.825 0.845 0.864 0.871 0.879 0.888 0.901 0.915 0.918 0.917 0.922 0.928 0.935 0.943 0.941 0.941 0.945 0.949 0.950 0.952 0.954 0.951 0.955 0.957 0.958 0.961 0.954 0.960 0.958 0.962 0.964 0.964 0.962 (ang) -162.7 -164.0 -165.6 -166.4 -167.2 -167.7 -168.6 -169.6 -170.4 -171.3 -172.1 -172.9 -173.6 -174.4 -174.8 -175.5 -176.3 -176.8 -177.1 -177.8 -178.3 -178.9 -179.5 -179.8 179.8 179.4 178.9 178.6 178.1 177.7 177.5 177.3 176.8 176.4 176.0 176.0 175.8
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W
RD12MVP1 S-PARAMETER DATA (@Vdd=7.2V, Id=500mA)
Freq. [MHz] 100 125 150 175 200 225 250 275 300 325 350 375 400 425 450 475 500 525 550 575 600 625 650 675 700 725 750 775 800 825 850 875 900 925 950 975 1000 S11 (mag) 0.782 0.801 0.817 0.833 0.847 0.860 0.872 0.882 0.894 0.901 0.910 0.917 0.918 0.923 0.930 0.933 0.938 0.939 0.942 0.943 0.946 0.950 0.950 0.953 0.952 0.954 0.955 0.954 0.955 0.958 0.958 0.956 0.958 0.956 0.958 0.957 0.959 (ang) -165.5 -166.9 -168.0 -168.8 -169.7 -170.6 -171.6 -172.4 -173.0 -173.5 -174.2 -175.2 -176.1 -176.7 -177.2 -177.7 -178.1 -178.8 -179.3 179.7 179.5 179.1 178.8 178.3 177.9 177.5 176.9 176.4 176.3 175.9 175.6 175.1 174.5 174.3 174.0 173.8 173.6 (mag) 6.105 4.716 3.724 3.023 2.519 2.137 1.828 1.569 1.361 1.193 1.062 0.947 0.844 0.756 0.683 0.623 0.568 0.520 0.477 0.439 0.407 0.378 0.350 0.327 0.306 0.286 0.268 0.252 0.238 0.225 0.213 0.203 0.192 0.182 0.175 0.166 0.158 S21 (ang) 69.0 62.4 56.4 51.6 47.5 43.5 39.6 36.0 33.4 31.0 28.5 25.9 23.5 21.5 20.4 18.7 17.2 15.7 14.3 13.3 12.2 11.3 10.4 9.8 8.9 8.3 7.7 7.2 7.0 6.4 5.9 5.5 5.3 5.3 5.3 5.2 5.7 (mag) 0.024 0.022 0.021 0.019 0.016 0.015 0.013 0.012 0.010 0.008 0.007 0.006 0.005 0.004 0.005 0.005 0.006 0.007 0.008 0.009 0.011 0.011 0.012 0.013 0.014 0.015 0.016 0.018 0.018 0.020 0.021 0.022 0.023 0.024 0.025 0.026 0.026 S12
RD12MVP1
MITSUBISHI ELECTRIC 5/7
1st Jun. 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD12MVP1
S22 (ang) -11.2 -14.9 -17.2 -21.5 -22.4 -21.1 -21.2 -21.3 -19.9 -15.8 -11.9 -7.2 1.3 20.2 27.4 36.9 50.8 53.6 57.3 67.9 70.4 70.9 73.8 75.6 76.9 75.8 76.4 77.8 79.0 77.8 78.7 78.7 77.3 76.8 78.3 78.6 79.1 (mag) 0.757 0.780 0.785 0.794 0.821 0.846 0.863 0.864 0.864 0.876 0.891 0.906 0.915 0.908 0.910 0.921 0.933 0.937 0.935 0.931 0.935 0.945 0.948 0.946 0.946 0.945 0.949 0.952 0.955 0.954 0.950 0.952 0.953 0.958 0.959 0.958 0.956 (ang) -166.6 -167.5 -168.8 -169.3 -169.3 -169.5 -170.4 -170.9 -171.4 -172.0 -172.6 -173.1 -173.9 -174.4 -174.5 -175.2 -175.9 -176.6 -176.8 -177.0 -177.4 -178.0 -178.6 -179.0 -179.3 -179.6 179.9 179.4 179.0 178.9 178.9 178.4 177.9 177.4 177.3 177.4 177.1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W
RD12MVP1 S-PARAMETER DATA (@Vdd=7.2V, Id=900mA)
Freq. [MHz] 100 125 150 175 200 225 250 275 300 325 350 375 400 425 450 475 500 525 550 575 600 625 650 675 700 725 750 775 800 825 850 875 900 925 950 975 1000 S11 (mag) 0.799 0.813 0.825 0.835 0.846 0.857 0.868 0.877 0.886 0.895 0.900 0.907 0.909 0.913 0.921 0.925 0.932 0.931 0.933 0.937 0.943 0.943 0.946 0.947 0.946 0.951 0.949 0.951 0.950 0.956 0.956 0.956 0.953 0.948 0.955 0.955 0.957 (ang) -169.4 -170.7 -171.3 -171.9 -172.5 -173.4 -174.3 -174.9 -175.3 -175.7 -176.4 -177.3 -178.1 -178.7 -179.1 -179.6 -180.0 179.2 178.6 178.0 177.7 177.3 177.0 176.6 175.9 175.5 175.0 174.7 174.5 174.3 173.7 173.3 172.8 172.5 172.2 172.0 171.8 (mag) 5.980 4.690 3.726 3.045 2.569 2.206 1.904 1.648 1.436 1.270 1.141 1.023 0.917 0.820 0.745 0.683 0.627 0.575 0.529 0.486 0.452 0.422 0.391 0.366 0.341 0.322 0.302 0.284 0.269 0.253 0.240 0.228 0.218 0.206 0.196 0.186 0.178 S21 (ang) 72.2 65.9 60.1 55.9 52.3 48.4 44.3 40.7 38.2 35.8 33.1 30.4 27.7 25.8 24.6 23.0 21.2 19.4 18.1 16.6 16.1 14.9 14.0 12.7 12.0 11.3 10.5 9.6 9.3 9.2 8.7 7.9 7.1 6.6 7.0 7.3 7.1 (mag) 0.021 0.020 0.019 0.017 0.016 0.015 0.013 0.011 0.010 0.009 0.008 0.007 0.007 0.005 0.006 0.006 0.007 0.007 0.008 0.009 0.010 0.011 0.013 0.013 0.015 0.015 0.016 0.017 0.019 0.020 0.020 0.021 0.023 0.024 0.024 0.025 0.026 S12
RD12MVP1
MITSUBISHI ELECTRIC 6/7
1st Jun. 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD12MVP1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W
Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
Warning! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury.
RD12MVP1
MITSUBISHI ELECTRIC 7/7
1st Jun. 2006

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