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| RB481Y-90 Diodes Schottky barrier diode RB481Y-90 Applications Low current rectification External dimensions (Unit : mm) Land size figure (Unit : mm) 0.7 0.220.05 0.130.05 (3) 0.6 1.20.1 1.60.1 Features 1) Ultra small mold type. (EMD4) 2) Low VF 3) High reliability 0.9MIN. 1.60.1 (4) 1.3 00.1 EMD4 Construction Silicon epitaxial planar (1) 0.5 1.00.1 0.5 (2) Structure 0.50.05 ROHM : EMD4 JEITA : SC-75A Size dot (year week factory) Taping dimensions (Unit : mm) 4.00.1 2.00.05 1.50.1 0 1.750.1 0.30.1 3.50.05 1.650.1 5.50.2 8.00.2 1.650.1 1PIN 4.00.1 0.80.1 00.1 0.650.1 Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current*1 Forward current surge peak 60Hz1cyc*1 Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 90 90 100 1 125 -40 to +125 Unit V V mA A (*1) Rating of per diode Electrical characteristic (Ta=25C) Parameter Forward voltage Reverse current Symbol VF IR Min. - Typ. 0.55 20 Max. 0.61 100 Unit V A Conditions IF=100mA VR=90V Rev.B 1.650.01 1.6 0.05 1/3 RB481Y-90 Diodes Electrical characteristic curves 100 Ta=75 10000 1000 Ta=125 100 f=1MHz FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) Ta=125 10 Ta=25 Ta=-25 1 100 Ta=25 10 1 0.1 0.01 Ta=-25 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=75 10 0.1 0 100 200 300 400 500 600 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 1 0 10 20 30 40 50 60 70 80 90 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 0 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 25 30 580 500 Ta=25 IF=0.1A n=30pcs 450 Ta=25 VR=90V n=30pcs 30 29 Ta=25 f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) 350 300 250 200 150 100 50 0 AVE:29.31uA CAPACITANCE BETWEEN TERMINALS:Ct(pF) 570 400 28 27 26 25 24 23 22 21 20 AVE:21.69pF 560 550 540 AVE:552.0mV 530 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 20 30 10 RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 15 1cyc 8.3ms 25 20 15 10 AVE:11.7ns 5 0 Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs 9 8 7 6 5 4 3 2 1 0 1 Ifsm 8.3ms 8.3ms 1cyc 10 5 AVE:3.70A 0 IFSM DISRESION MAP trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 10 9 1000 0.2 Rth(j-a) Per diode 8 7 6 5 4 3 2 1 0 1 Ifsm t TRANSIENT THAERMAL IMPEDANCE:Rth (/W) PEAK SURGE FORWARD CURRENT:IFSM(A) Rth(j-c) 100 FORWARD POWER DISSIPATION:Pf(W) D=1/2 Sin(180) DC Mounted on epoxy board IM=10mA IF=100mA 0.1 1ms time 300us 10 TIME:t(s) IFSM-t CHARACTERISTICS 100 10 0.001 0 10 TIME:t(s) Rth-t CHARACTERISTICS 0.1 1000 0 0.05 0.1 0.15 0.2 0.25 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS 0.3 Rev.B 2/3 RB481Y-90 Diodes 1 Per diode 0.3 Per diode 0A 0V Io 0.3 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.8 Per diode t T REVERSE POWER DISSIPATION:PR (W) 0.2 D=1/2 0.6 Sin(180) D=1/2 DC 0.2 DC VR D=t/T VR=45V Tj=125 0A 0V t DC Io VR D=t/T VR=45V Tj=125 0.2 D=1/2 T 0.4 0.1 Sin(180) 0 0.1 Sin(180) 0 0 20 40 60 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 80 0 25 50 75 100 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta) 125 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc() Derating Curve(Io-Tc) Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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