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| Infrared Light Emitting Diode OPR2800, OPR2800T Features: * * * * * High-power GaAIAs Matches PLCC-2 footprint 880 nm wavelength Wide beam angle Wide operating temperature range (-40o C to +100o C) Description: The OPR2800 is a GaAIAs infrared LED mounted in a surface mount chip carrier (SMCC) package with a flat lens window that allows a wide beam angle. The SMCC format has a lower height profile than the PLCC-2 package and mounts in the same footprint. The device is suitable for use in single device or array applications. The OPR2800 is spectrally matched to the OPR5500 phototransistor. Applications: * * Non-contact position sensing Datum detection Ordering Information * * Machine automation Optical encoding Part Number OPR2800 OPR2800T LED Peak Total Wavelength Beam Angle 880 nm 100 Packaging Waffle Pack Tape & Reel 2 1 Anode Indicator Pin # 1 2 LED Anode Cathode RoHS OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. Issue A.4 1/07 Page 1 of 2 OPTEK Technology Inc. -- 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com Infrared Light Emitting Diode OPR2800, OPR2800T Absolute Maximum Ratings (TA = 25 C unless otherwise noted) Storage Temperature Range Operating Temperature Range Reverse Voltage Continuous Forward Current Solder reflow time within 5C of peak temperature is 20 to 40 seconds Power Dissipation (1) -40o C to +100o C -40o C to +100o C 30 V 50 mA 250 C 130 mW(2) Electrical Characteristics (TA = 25 C unless otherwise noted) SYMBOL EE (APT) VF IR P HP tr tf PARAMETER Apertured Radiant Incidence Forward Voltage Reverse Current Wavelength at Peak Emission Emission Angle at Half Power Points Output Rise Time, Output Fall Time Output Rise Time, Output Fall Time MIN 0.2 TYP 890 100 MAX 1.50 100 500 500 UNITS mW/cm V A nm Degree ns ps 2 TEST CONDITIONS IF = 20 mA(3) IF = 50 mA VR= 2.0 V IF = 10 mA IF = 20 mA IF(PK) = 100 mA, PW = 10 s, D.C. = 10.0% Notes: 1. Solder time less than 5 seconds at temperature extreme. 2. Derate linearly at 1.73 mW/ C above 25 C. 3. EE(APT) is a measurement of the apertured radiant incidence upon a sensing area 0.081" (2.06 mm) in diameter, perpendicular to and centered on the mechanical axis of the lens and 0.590" (14.99 mm) from the measurement surface. EE(APT) is not necessarily uniform within the measured area. OP2800 Forward Voltage vs Forward Current vs Temperature 1.8 1.7 1.6 3.5 Normalized at 50 mA and 20 C 3.0 -60 C -40 C -20 C 0 C 20 C 40 C 60 C 80 C 100 C 120 C Optical Power vs IF vs Temperature Typical Forward Voltage (V) Normalized Optical Power 2.5 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0 10 20 30 40 50 60 70 80 90 100 Forward Current (mA) -60 C -40 C -20 C 0 C 20 C 40 C 60 C 80 C 100 C 120C 2.0 1.5 1.0 0.5 0.0 0 10 20 30 40 50 60 70 80 90 100 Forward Current IF (mA) OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. Issue A.4 1/07 Page 2 of 2 OPTEK Technology Inc. -- 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com |
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