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| DMN2005LPK Lead-free Green N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features * * * * * * * * Low On-Resistance Low Gate Threshold Voltage Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 4) ESD Protected Gate UNDER DEVELOPMENT DFN1006-3 G H Dim A A K Min 0.95 0.55 0.45 0.20 0.47 0 0.10 0.20 3/4 3/4 Max 1.075 0.675 0.55 0.30 0.53 0.05 0.20 0.30 3/4 3/4 Typ 1.00 0.60 0.50 0.25 0.50 0.03 0.15 0.25 0.35 0.40 B C D G H BC M Mechanical Data * * * * * * * Case: DFN1006-3 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals Connections: See Diagram Terminals: Finish 3/4 Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking: See Last Page Ordering & Date Code Information: See Last Page Drain D N L K L M N G D S TOP VIEW All Dimensions in mm Body Diode Gate Gate Protection Diode ESD protected Source EQUIVALENT CIRCUIT Maximum Ratings Drain-Source Voltage Gate-Source Voltage @ TA = 25C unless otherwise specified Characteristic Symbol VDSS VGSS Continuous Pulsed (Note 3) ID Pd RqJA Tj, TSTG Value 20 8 200 250 200 625 -65 to +150 Units V V mA mW C/W C Drain Current per element (Note 1) Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Note: 1. Device mounted on FR-4 PCB. 2. No purposefully added lead. 3. Pulse width 10mS, Duty Cycle 1%. 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DS30836 Rev. 3 - 1 1 of 4 www.diodes.com DMN2005LPK a Diodes Incorporated UNDER DEVELOPMENT NEW PRODUCT Electrical Characteristics Characteristic OFF CHARACTERISTICS (per element) (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (per element) (Note 5) Gate Threshold Voltage VGS(th) 0.53 3/4 3/4 3/4 3/4 3/4 40 3/4 0.9 0.85 1.2 2.4 2.5 3/4 1.2 1.5 1.7 1.7 3.5 3.5 3/4 V W VDS = VGS, ID = 100mA VGS = 4V, ID = 10mA VGS = 2.7V, ID = 200mA VGS = 2.5V, ID = 10mA VGS = 1.8V, ID = 200mA VGS = 1.5V, ID = 1mA VDS = 3V, ID = 10mA BVDSS IDSS IGSS 20 3/4 3/4 3/4 3/4 3/4 3/4 10 5 V mA mA VGS = 0V, ID = 100mA VDS = 17V, VGS = 0V VGS = 8V, VDS = 0V @ TA = 25C unless otherwise specified Symbol Min Typ Max Unit Test Condition Static Drain-Source On-Resistance RDS (ON) Forward Transfer Admittance Notes: |Yfs| mS 5. Short duration test pulse used to minimize self-heating effect. 0.9 1000 900 800 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (mA) 700 600 500 400 300 200 100 0 0.4 0.8 1.2 2 TBD 0.6 TBD 0.3 0 0 1 2 3 4 5 1.6 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Reverse Drain Current vs. Source-Drain Voltage 1 1 VGS(th), GATE THRESHOLD VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 -75 TBD TBD 0.1 -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 Tch, CHANNEL TEMPERATURE (C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance Vs. Drain Current DS30836 Rev. 3 - 1 2 of 4 www.diodes.com DMN2005LPK UNDER DEVELOPMENT 1 1.0 0.9 0.8 0.7 0.6 TBD NEW PRODUCT 0.5 0.4 0.3 0.2 0.1 0.1 0.2 0.4 0.6 0.8 1.0 TBD 0 0 2 4 6 ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current VGS, GATE-SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source, On-Resistance vs. Gate-Source Voltage 0.5 1 0.9 0.4 0.8 0.7 0.6 0.5 0.4 TBD 0.3 TBD 0.2 0.1 0.3 0.2 0 0.2 0.4 0.6 0.8 1 1.2 0 -50 -25 0 25 50 75 100 125 150 ID, DRAIN CURRENT (A) Fig. 7 On-Resistance vs. Drain Current and Gate Voltage Tj, JUNCTION TEMPERATURE ( C) Fig. 8 Static Drain-Source, On-Resistance vs. Temperature 1 10000 IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) 1000 IDR, REVERSE DRAIN CURRENT (A) 0.1 100 TBD 10 TBD 0.01 1 0.1 2 4 6 8 10 12 14 16 18 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Drain Source Leakage Current vs. Voltage 0.001 0 0.5 VSD, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Reverse Drain Current vs. Source-Drain Voltage 1 DS30836 Rev. 3 - 1 3 of 4 www.diodes.com DMN2005LPK UNDER DEVELOPMENT |Yfs|, FORWARD TRANSFER ADMITTANCE (S) 1 120 NEW PRODUCT 100 C, CAPACITANCE (pF) 80 0.1 TBD 60 TBD 40 20 0.01 1 10 100 1000 0 0 2 4 6 8 10 12 14 16 18 20 ID, DRAIN CURRENT (mA) Fig. 11 Forward Transfer Admittance vs. Drain Current VDS, DRAIN SOURCE VOLTAGE (V) Fig. 12 Capacitance Variation Ordering Information Device (Note 6) Packaging DFN1006-3 Shipping 3000/Tape & Reel DMN2005LPK-7 Notes: 6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information DM DM = Product Type Marking Code, Dot Denotes Collector Side IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30836 Rev. 3 - 1 4 of 4 www.diodes.com DMN2005LPK |
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