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MGSF2N02EL
Preferred Device
Power MOSFET
2.8 Amps, 20 Volts, N-Channel SOT-23
These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry.
Features
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* * * *
Pb-Free Packages are Available Low RDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SOT-23 Surface Mount Package Saves Board Space IDSS Specified at Elevated Temperature
2.8 A, 20 V RDS(on) = 85 mW (max)
N-Channel D
Applications
* DC-DC Converters * Power Management in Portable and Battery Powered Products, ie:
Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Drain Current - Continuous @ TA = 25C - Single Pulse (tp = 10 ms) Total Power Dissipation @ TA = 25C Operating and Storage Temperature Range Thermal Resistance Junction-to-Ambient (Note 1) Thermal Resistance Junction-to-Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VGS ID IDM PD TJ, Tstg RqJA 100 300 TL 260 C Value 20 8.0 2.8 5.0 1.25 - 55 to 150 W C C/W
1 2
G
S Unit Vdc Vdc A
3
MARKING DIAGRAM
SOT-23 CASE 318 STYLE 21
NT M
NT M
= Device Code = Date Code
PIN ASSIGNMENT
3
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. 1" Pad, t < 10 sec. 2. Min pad, steady state.
1
Drain
2
Gate
Source
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
(c) Semiconductor Components Industries, LLC, 2004
1
August, 2004 - Rev. 2
Publication Order Number: MGSF2N02EL/D
MGSF2N02EL
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, ID = 10 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125C) Gate-Source Leakage Current (VGS = $ 8.0 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 3) Gate-Source Threshold Voltage (VDS = VGS, ID = 250 mAdc) Threshold Temperature Coefficient (Negative) Static Drain-to-Source On-Resistance (VGS = 4.5 Vdc, ID = 3.6 A) (VGS = 2.5 Vdc, ID = 3.1 A) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge (VDS = 16 Vd ID = 1.75 Adc, Vdc, 1 75 Ad VGS = 4.0 Vdc) (Note 3) SOURCE-DRAIN DIODE CHARACTERISTICS Forward Voltage (IS = 1.0 Adc, VGS = 0 Vdc) (Note 3) Reverse Recovery Time (IS = 1.0 Adc, VGS = 0 Vdc, dlS/ dt = 100 A/ms) (Note 3) Reverse Recovery Stored Charge 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperature. trr ta tb QRR VSD - - - - - - 0.76 - 104 42 62 0.20 1.2 - - - - - mC ns V (VDD = 16 Vdc, ID = 2.8 Adc, Vgs = 4.5 V, RG = 2.3 W) td(on) tr td(off) tf QT Qgs Qgd - - - - - - - 6.0 95 28 125 3.5 0.6 1.5 - - - - - - - nC ns (VDS = 5.0 Vdc, VGS = 0 V 5 0 Vd V, f = 1.0 MHz) Ciss Coss Crss - - - 150 130 45 - - - pF VGS(th) 0.5 - RDS(on) - - 78 105 85 115 - -2.3 1.0 - Vdc mV/C mW V(BR)DSS 20 - IDSS - - IGSS - - - - 1.0 10 "100 nA - 22 - - Vdc mV/C mAdc Symbol Min Typ Max Unit
ORDERING INFORMATION
Device MGSF2N02ELT1 MGSF2N02ELT1G MGSF2N02ELT3 MGSF2N02ELT3G Package SOT-23 SOT-23 (Pb-Free) SOT-23 SOT-23 (Pb-Free) Shipping 3,000 Tape & Reel 3,000 Tape & Reel 10,000 Tape & Reel 10,000 Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
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2
MGSF2N02EL
8 ID, DRAIN CURRENT (AMPS) 5 ID, DRAIN CURRENT (AMPS) VGS = 10 V VGS = 7 V VGS = 5 V TJ = 25C VGS = 2.2 V 4 VDS w 10 V
6
VGS = 2.6 V 4 VGS = 3 V 2
VGS = 2.0 V VGS = 1.8 V VGS = 1.6 V VGS = 1.2 V
3
2 TJ = 100C 1
TJ = 55C
0 0
0 0.5 1 1.5 2 2.5 VDS, DRAIN-TO-SOURCE VOLTAGE (V)
0
0.5
1
1.5
2
2.5
3
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
0.3
Figure 2. Transfer Characteristics
0.12 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) TJ = 25C 0.10 ID = 3.6 A
TJ = 25C RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
0.2
0.08
0.06
0.1
VGS = 2.5 V
0.04
0.02 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (V)
0 4 5 6 7 8 -ID, DRAIN CURRENTS (AMPS)
Figure 3. On-Resistance vs. Gate-to-Source Voltage
Figure 4. On-Resistance vs. Gate Voltage
1.8 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) ID = 3.6 A VGS = 4.5 V
10000 VGS = 0 V IDSS, LEAKAGE (nA) TJ = 150C 1000
1.5
1.2
0.9
100
TJ = 100C
0.6 -50
-25
0
25
50
75
100
125
150
10 4 8 12 16 20 VDS, DRAIN-TO-SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (C)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current vs. Voltage
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MGSF2N02EL
-VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS, GATE-TO-SOURCE VOLTAGE (V) 350 300 C, CAPACITANCE (pF) 250 200 150 100 50 0 0 4 8 12 16 20 Ciss Coss Crss TJ = 25C 5 QT 4
3 Q1 2 Q2
1
ID = 3.6 A TJ = 25C 0 1 2 3
0
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Qg, TOTAL GATE CHARGE, (nC)
Figure 7. Capacitance Variation
Figure 8. Gate-to-Source Voltage vs. Total Charge
1.8 IS, SOURCE CURRENT (AMPS)
1000
VDD = 16 V ID = 2.8 A VGS = 4.5 V tf tr td(off)
1.5 1.2 0.9 0.6 0.3
VGS = 4.5 V TJ = 25C
t, TIME (ns)
100
10 td(on)
1 1 10 RG, GATE RESISTANCE (W) 100
0 0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
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MGSF2N02EL
PACKAGE DIMENSIONS
SOT-23 (TO-236) CASE 318-08 ISSUE AJ
A L
3 1 2
BS
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-03 AND -07 OBSOLETE, NEW STANDARD 318-08. INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60
V
G C D H K J
DIM A B C D G H J K L S V
STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN
SOLDERING FOOTPRINT*
0.95 0.037
0.95 0.037
2.0 0.079 0.9 0.035 0.8 0.031
SCALE 10:1 mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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5
MGSF2N02EL
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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MGSF2N02EL/D

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