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| High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N100 IXTY 01N100 VDSS ID25 RDS(on) = 1000 V = 100mA = 80 Symbol Test Conditions Maximum Ratings 01N100 1000 1000 20 30 100 400 25 -55 ... +150 150 -55 ... +150 V V TO-251 AA VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM Tstg TL Weight TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C; TJ = 25C to 150C TC = 25C, pulse width limited by max. TJ TC = 25C G V V mA mA W C C C C g D S D (TAB) TO-252 AA G S D (TAB) G = Gate, S = Source, D = Drain, TAB = Drain 1.6 mm (0.063 in) from case for 5 s 300 0.8 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1000 2 4.5 50 TJ = 25C TJ = 125C 60 10 200 80 V V V nA A A Features l VDSS VGS(th) IGSS IDSS RDS(on) V GS = 0 V, ID = 25 A V DS = VGS, ID = 25 A VGS = 20 VDC, VDS = 0 VDS = 0.8 VDSS VGS = 0 V International standard packages JEDEC TO-251 AA, TO-252 AA l Low RDS (on) HDMOSTM process l l Rugged polysilicon gate cell structure Fast switching times Applications l l l l Level shifting Triggers Solid state relays Current regulators V GS = 10 V, ID = ID25 Pulse test, t 300 ms, duty cycle d 2 % (c) 2001 IXYS All rights reserved 98812B (11/01) IXTU 01N100 IXTY 01N100 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 140 60 VGS = 0 V, VDS = 25 V, f = 1 MHz 7.5 1.8 12 V GS = 10 V, VDS = 500 V, ID = ID25 RG = 50 (External) 12 28 28 8 V GS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 1.8 3 3 mS pF pF pF ns ns ns ns nC nC nC K/W Dim. A A1 b b1 b2 c c1 D E e e1 H L L1 L2 L3 Millimeter Min. Max. 2.19 0.89 0.64 0.76 5.21 0.46 0.46 5.97 6.35 2.28 4.57 17.02 8.89 1.91 0.89 1.15 2.38 1.14 0.89 1.14 5.46 0.58 0.58 6.22 6.73 BSC BSC 17.78 9.65 2.28 1.27 1.52 1. 2. 3. 4. Gate Drain Source Drain Back heatsink TO-251 AA Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC V DS = 10 V; ID = 0.5 ID25, pulse test Inches Min. Max. .086 0.35 .025 .030 .205 .018 .018 .235 .250 .090 .180 .670 .350 .075 .035 .045 .094 .045 .035 .045 .215 .023 .023 .245 .265 BSC BSC .700 .380 .090 .050 .060 Source-Drain Diode Symbol VSD t rr Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1.8 1.5 V s TO-252 AA IF = 100 mA, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 0.75 A, -di/dt = 10 A/s, VDS = 25 V 1 Anode 2 NC 3 Anode 4 Cathode Dim. A A1 A2 b b1 b2 c c1 D D 1 E E1 e e1 H L L1 L2 L3 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 Millimeter Min. Max. 2.19 2.38 0.89 1.14 0 0.13 0.64 0.89 0.76 1.14 5.21 5.46 0.46 0.58 0.46 0.58 5.97 6.22 4.32 5.21 6.35 6.73 4.32 5.21 2.28 BSC 4.57 BSC 9.40 10.42 0.51 1.02 0.64 1.02 0.89 1.27 2.54 2.92 Inches Min. Max. 0.086 0.094 0.035 0.045 0 0.005 0.025 0.035 0.030 0.045 0.205 0.215 0.018 0.023 0.018 0.023 0.235 0.245 0.170 0.205 0.250 0.265 0.170 0.205 0.090 BSC 0.180 BSC 0.370 0.410 0.020 0.040 0.025 0.040 0.035 0.050 0.100 0.115 5,486,715 5,381,025 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 5,049,961 5,063,307 5,187,117 5,237,481 |
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