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| Bay Linear Linear Excellence POWER MOSFET IRF830 Advance Information Description The Bay Linear MOSFET's provide the designers with the best combination of fast switching, ruggedized device design, low 0n-resistance and low cost-effectiveness. The TO-220 is offered in a 3-pin is universally preferred for all commercial-industrial applications at power dissipation level to approximately to 50 watts. Also, available in a D2 surface mount power package with a power dissipation up to 2 Watts Features * * * * * Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 500V RDS (ON) = 1.5 ID = 4.5A Ordering Information Device IRL830T IRL830S Package TO-220 TO-263 ( D2 ) Temp. 0 to 150C 0 to 150C Absolute Maximum Rating Parameter ID@ TC =25C ID@ TC =100C IDM PD @ TC =25C Continuous Drain Current, VGS @10V Continuous Drain Current, VGS @10V Pulsed Drain Current (1) Power Dissipation Linear Derating Factor Linear Derating Factor ( PCB Mount, D2 ) (1) Gate-to- Source Voltage Single Pulse Avalanche Energy (2) Avalanche Current (1) Repetitive Avalanche Energy (1) Peak Diode Recovery dv/dt (3) Junction & Storage Temperature Range Soldering Temperature, for 10 seconds Max 4.5 2.9 18 74 0.59 0.025 20 280 4.5 7.4 3.5 -55 to +150 300 (1.6mm from case) Unit A W W/C V mJ A mJ V/ns C VGS EAS IAR EAR dv/dt TJ, TSTG Thermal Resistance Parameter RJC RCS RJA RJA Junction-to Case Case-to-Sink, Flat, Greased Surface ( TO-220) Junction-to Ambient ( PCB Mount, D2 ) Junction-to Ambient Min - Typ 0.50 - Max 1.7 40 62 Units C/W Bay Linear, Inc 2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 989-7144, Fax: (925) 940-9556 www.baylinear.com IRF830 Electrical Characteristics ( TC = Symbol V(BR)DSS V(BR)DSS / TJ ID(ON) RDS(ON) VGS(TH) gfs IDSS 25C unless otherwise specified) Parameter Drain-to-source Breakdown Voltage Breakdown Voltage Temperature Coefficient On-State Drain Current (note 2) Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn -Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Conditions VGS = 0V, ID = 250A Reference to 25C, ID = 1mA VGS > ID(ON) x RDS(ON)Max VGS =10V, ID = 2.7A (note 4) VDS = VGS, ID = 250A VDS = 50V, ID = 2.7A VDS = 500V, VGS = 0V VDS = 400V, VGS = 0V, TC= 125C VGS = 20V Min 500 - Typ Max Units V 0.61 4.5 1.5 V/C A V S A 2.0 2.5 - - 4.0 25 250 100 IGSS Qg Qqs Qgd td ( on) Tr td (off) Tf LD LS Ciss Coss Crss VG = -20V ID =3.1A VDS = 400V VGS = 10V (note 4) VDD = 250V ID = 3.1.1A RG = 12 RD = 79 (note 4) Between lead 6mm (0.25in.) from package and center or die contact VGS = 0V VDS = 25V F = 1.0MHZ - -100 38 5.0 22 8.2 16 42 16 4.5 7.5 610 160 68 - nA nC ns nH pF Source-Drain Rating Characteristics Symbol IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) (Note 1) Diode Forward Voltage (note 4) Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Conditions MOSFET symbol showing the integral reverse p-n junction diode. Min Typ - Max Units 4.5 A 18 1.6 V TJ=25C, IS=2.5A,VGS=DV 320 640 ns TJ=25 C, IF=2.1A 1.0 2.0 di/dt=100A/s (Note 4) C Intrinsic turn-on time is negligible (turn-on is dominated by (LS+LD) Notes: 1. Repetitive Rating; pulse width limited by max. junction temperature. 2. VDD = 50V, starting Tj = 25C, L = 24 mH RG = 25, IAS = 4.5A 3. ISD 4.5A, di/dt 75A/s, VDD V(BR)DSS, Tj 150C 4. Pulse with 300s; duty cycle 2% Bay Linear, Inc 2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 989-7144, Fax: (925) 940-9556 www.baylinear.com Advance Information- These data sheets contain descriptions of products that are in development. The specifications are based on the engineering calculations, computer simulations and/ or initial prototype evaluation. Preliminary Information- These data sheets contain minimum and maximum specifications that are based on the initial device characterizations. These limits are subject to change upon the completion of the full characterization over the specified temperature and supply voltage ranges. The application circuit examples are only to explain the representative applications of the devices and are not intended to guarantee any circuit design or permit any industrial property right to other rights to execute. Bay Linear takes no responsibility for any problems related to any industrial property right resulting from the use of the contents shown in the data book. Typical parameters can and do vary in different applications. Customer's technical experts must validate all operating parameters including " Typical" for each customer application. LIFE SUPPORT AND NUCLEAR POLICY Bay Linear products are not authorized for and should not be used within life support systems which are intended for surgical implants into the body to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent of Bay Linear President. Bay Linear, Inc 2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 989-7144, Fax: (925) 940-9556 www.baylinear.com |
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