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| PD- 96062 IRF7425PBF HEXFET(R) Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free VDSS 20V RDS(on) max (mW) 8.2@VGS = -4.5V 13@VGS = -2.5V ID -15A -13A Description These P-Channel HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. S 1 8 A D D D D S S G 2 7 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. -20 -15 -12 -60 2.5 1.6 20 12 -55 to + 150 Units V A W mW/C V C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Max. 50 Units C/W www.irf.com 1 02/09/06 IRF7425PBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. -20 --- --- --- -0.45 44 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.010 --- --- --- --- --- --- --- --- 87 18 21 13 20 230 160 7980 1480 980 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 8.2 VGS = -4.5V, ID = -15A m 13 VGS = -2.5V, ID = -13A -1.2 V VDS = VGS, ID = -250A --- S VDS = -10V, ID = -15A -1.0 VDS = -16V, VGS = 0V A -25 VDS = -16V, VGS = 0V, TJ = 70C -100 VGS = -12V nA 100 VGS = 12V 130 ID = -15A 27 nC VDS = -10V 32 VGS = -4.5V --- VDD = -10V --- ID = -1.0A ns --- RG = 6.0 --- VGS = -4.5V --- VGS = 0V --- pF VDS = -15V --- = 1.0kHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units --- --- --- --- 120 160 -2.5 -60 -1.2 180 240 V ns nC A Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -2.5A, VGS = 0V TJ = 25C, IF = -2.5A di/dt = -100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. Surface mounted on 1 in square Cu board, t 10sec. Pulse width 400s; duty cycle 2%. 2 www.irf.com IRF7425PBF 1000 VGS -7.0V -5.0V -4.5V -2.5V -1.8V -1.5V -1.2V BOTTOM -1.0V TOP 1000 -I D , Drain-to-Source Current (A) 100 -I D , Drain-to-Source Current (A) 100 VGS -7.0V -5.0V -4.5V -2.5V -1.8V -1.5V -1.2V BOTTOM -1.0V TOP 10 10 1 1 -1.0V 0.1 -1.0V 20s PULSE WIDTH TJ = 25 C 1 10 100 0.01 0.1 0.1 0.1 20s PULSE WIDTH TJ = 150 C 1 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 TJ = 150 C 10 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = -15A -I D , Drain-to-Source Current (A) 1.5 1.0 TJ = 25 C 1 0.5 0.1 1.0 V DS = -15V 20s PULSE WIDTH 1.2 1.4 1.6 1.8 2.0 2.2 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7425PBF 12000 10000 -VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 8 ID = -15A VDS =-16V VDS =-10V C, Capacitance (pF) 6 8000 Ciss 6000 4 4000 2 2000 Coss Crss 1 10 100 0 0 0 40 80 120 160 -VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10 -ID , Drain Current (A) I 100 100us TJ = 150 C 1 10 1ms TJ = 25 C 10ms 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1 0.1 TA = 25 C TJ = 150 C Single Pulse 1 10 100 -VSD ,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7425PBF 15 VDS 12 RD VGS RG D.U.T. + -ID , Drain Current (A) 9 VGS Pulse Width 1 s Duty Factor 0.1 % 6 Fig 10a. Switching Time Test Circuit 3 td(on) tr t d(off) tf VGS 0 25 50 75 100 125 150 10% TC , Case Temperature ( C) 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms 100 Thermal Response (Z thJA ) D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100 0.1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com - VDD 5 IRF7425PBF RDS(on) , Drain-to -Source On Resistance () 0.015 RDS (on) , Drain-to-Source On Resistance ( ) 0.010 0.009 VGS = -2.5V 0.008 0.010 0.007 ID = -15A 0.006 VGS = -4.5V 0.005 0 10 20 30 40 50 60 -I D , Drain Current (A) 0.005 1.0 2.0 3.0 4.0 5.0 -VGS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Fig 13. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50K QG QGS VG QGD 12V .2F .3F VGS -3mA Charge IG ID Current Sampling Resistors Fig 14a. Basic Gate Charge Waveform Fig 14b. Gate Charge Test Circuit 6 www.irf.com + D.U.T. - VDS IRF7425PBF 3.0 120 100 -VGS(th) , Variace ( V ) 2.5 80 Power (W) 60 ID = -250A 2.0 40 20 1.5 -75 -50 -25 0 25 50 75 100 125 150 0 0.001 0.010 0.100 1.000 10.000 100.000 T J , Temperature ( C ) Time (sec) Fig 15. Typical Vgs(th) Variance Vs. Juction Temperature Fig 16. Typical Power Vs. Time www.irf.com 7 IRF7425PBF SO-8 Package Outline Dimensions are shown in millimeters (inches) 9 6 ' & ! % " $ 7 9DH 6 6 i p DI8C@T HDI H6Y $"! %'' # (' " &$ '( #(& ! (' (%' $&# HDGGDH@U@ST HDI H6Y "$ &$ !$ "" ( #' "' $ !$ $ # % @ $ # C !$Ab dA 6 9 @ r r C F G $AA76TD8 !$AA76TD8 !!'# !## (( % A (% $ A' !&AA76TD8 %"$AA76TD8 $' %! !$ # A $ !& A' %Y r r 6 FAA#$ 8 Ab#dA 'YAG & 'YAp 'YAi !$Ab dA 6 867 IPU@T) AA9DH@ITDPIDIBAEAUPG@S6I8DIBAQ@SA6TH@A #$H ((# !AA8PIUSPGGDIBA9DH@ITDPI)AHDGGDH@U@S "AA9DH@ITDPITA6S@ATCPXIADIAHDGGDH@U@STAbDI8C@Td #AAPVUGDI@A8PIAPSHTAUPAE@9@8APVUGDI@AHT !66 $AAA9DH@ITDPIA9P@TAIPUADI8GV9@AHPG9AQSPUSVTDPIT AAAAAHPG9AQSPUSVTDPITAIPUAUPA@Y8@@9A $Ab%d %AAA9DH@ITDPIA9P@TAIPUADI8GV9@AHPG9AQSPUSVTDPIT AAAAAHPG9AQSPUSVTDPITAIPUAUPA@Y8@@9A!$Ab d &AAA9DH@ITDPIADTAUC@AG@IBUCAPAAG@69AAPSATPG9@SDIBAUP AAAAA6ATV7TUS6U@ APPUQSDIU 'YA&!Ab!'d %#%Ab!$$d "YA !&Ab$d 'YA &'Ab&d SO-8 Part Marking @Y6HQG@)AUCDTADTA6IADSA& AHPTA@U DIU@SI6UDPI6G S@8UDAD@S GPBP 8 ;;;; ) 96U@A8P9@AXX QA2A9@TDBI6U@TAG@69AS@@ QSP9V8UAPQUDPI6G A2AG6TUA9DBDUAPAAUC@A@6S XXA2AX@@F 6A2A6TT@H7GATDU@A8P9@ GPUA8P9@ Q6SUAIVH7@S www.irf.com IRF7425PBF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 02/06 www.irf.com 9 |
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