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| ZENER DIODE AW01 FEATURES * For stabilized power supply. * Diffused-junction. Glass passivated and encapsulated. OUTLINE DRAWING 3.5 MAX (0.14) Unit in mm(inch) Cathode band (Red) Type mark (Red) 29MIN. (1.14) 62MIN. (2.44) 5MAX (0.2) 29MIN. (1.14) 0.8 (0.03) Direction of polarity 06NA Weight: 0.35 (g) ABSOLUTE MAXIMUM RATINGS Items Permissible Power Dissipation Operating Junction Temperature Storage Temperature Maximum Permissible Current Non-Repetitive Peak Reverse OneCycle Dissipation Symbols P Tj Tstg IZM PRSM Units W C C mA Wp Ratings 1.0 -40 ~ +150 -40 ~ +150 Refer to characteristics column 80 Notes (1) Lead mounting : Lead temperature 300C max. to 3.2mm from body for 5sec. max.. (2) Mechanical strength : Bending 90x2 cycles or 180x1 cycle, Tensile 2kg, Twist 90x1 cycle. CHARACTERISTICS(TL=25C) Type Characteristics Zener Voltage Vz (V) Maximum Dynamic Impedance Minimum Maximum Zz (ohm) 5.2 6.2 7.7 8.5 9.4 10.4 11.4 12.4 13.5 15.3 16.8 18.8 20.8 22.7 25.1 28.0 31.0 6.8 7.9 8.7 9.6 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 28.9 32.0 35.0 9 7 3 3 5 5 8 8 12 12 15 15 15 15 15 15 15 Test Current Iz (mA) 60 25 25 25 25 25 25 25 15 15 15 15 15 10 10 10 10 Maximum Permissible Current (TL=100C) (L=10mm) IZM(mA) 160 135 120 105 95 85 75 70 65 60 52 48 43 40 35 32 30 AW01-06 AW01-07 AW01-08 AW01-09 AW01-10 AW01-11 AW01-12 AW01-13 AW01-15 AW01-16 AW01-18 AW01-20 AW01-22 AW01-24 AW01-27 AW01-30 AW01-33 Typical Zener Voltage Temperature Coefficient z(%/C) 0.025 0.035 0.045 0.053 0.058 0.063 0.065 0.068 0.072 0.074 0.076 0.078 0.080 0.081 0.082 0.083 0.084 PDE-AW01-0 AW01 Typical zener characteristics 200 180 160 AW01-06 Typical dynamic impedance vs. zener current 100 TL=25C AW01-07 AW01-08 AW01-09 AW01-10 AW01-11 AW01-12 AW01-13 140 120 100 80 60 40 20 DYNAMIC IMPEDANCE () ZENER CURRENT (mA) 10 AW01-15 AW01-16 AW01-18 AW01-20 AW01-22 AW01-24 AW01-24 AW01-27 AW01-30 AW01-33 1 AW01-16 AW01-07 0 0 4 8 12 16 20 24 28 32 0.3 1 10 ZENER CURRENT (mA) 100 ZENER VOLTAGE (V) Max. allowable power dissipation vs. ambient temperature 1.4 Max. allowable power dissipation vs. lead temperature 1.4 MAX. ALLOWABLE PWOER DISSIPATION (W) 1.2 MAX. ALLOWABLE PWOER DISSIPATION (W) 1.2 1.0 1.0 0.8 Lead length L=10mm 20mm 25mm L L 0.8 Lead length L=10mm 20mm 25mm L L 0.6 0.6 0.4 0.4 0.2 PC board (100x180x1.6t) Copper foil ( 5.5) 0.2 Lead temp PC board (100x180x1.6t) Copper foil ( 5.5) 0 0 20 40 60 80 100 120 140 0 0 20 40 60 80 100 120 140 AMBIENT TEMPERATURE (C) LEAD TEMPERATURE (C) Reverse power characteristic (Non-repetitive) REVERSE INSTANTANEOUS PWER DISSIPATION (W) 100 Reverse instantaneous loss Steady state thermal impedance 140 STEADY STATE THERMAL IMPEDANCE (C/W) 10ms 1 cycle 120 100 80 Rth(j - l) 60 40 20 0 Ambient temp. measured point Lead temp. Lead measured poin length (0.5 thermocouple) 2 Copper foil ( 5.5) 15 Lead length Rth(j - a) 50 20 PC board (100x180x1.6t) 0 1 10 CYCLES 100 0 10 20 30 LEAD LENGTH (mm) PDE-AW01-0 AW01 Transient thermal impedance 200 Lead length = 10 mm Definition of zener characteristics 150C 25C TRANSIENT THERMAL IMPEDANCE (C/W) 100 Rth(j - a) Vz Vz IF Rth(j - l) 10 150C 25C VF IAC VAC Iz 1 Note : PC. board mounted PC. board( 100 x 180 x 1.6t) Copper foil ( 5.5 ) 0.1 0.001 0.01 0.1 TIME (s) 1 10 100 Vz:Zener voltage change Vz :Zener voltage (Test current Iz) Iz :Test current Zz :Dynamic impedance=VAC / IAC IF :Forward current VF :Forward voltage drop z :Zener voltage average temperature coefficients Vz 1 = x x100 Vz (150-25) PDE-AW01-0 HITACHI POWER SEMICONDUCTORS Notices 1.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are adviced to contact Hitachi sales department for the latest version of this data sheets. 2.Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure before use. 3.In cases where extremely high reliability is required(such as use in nuclear power control, aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel control equipment and various kinds of safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement. Or consult Hitachi's sales department staff. 4.In no event shall Hitachi be liable for any damages that may result from an accident or any other cause during operation of the user's units according to this data sheets. Hitachi assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in this data sheets. 5.In no event shall Hitachi be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 6.No license is granted by this data sheets under any patents or other rights of any third party or Hitachi, Ltd. 7.This data sheets may not be reproduced or duplicated, in any form, in whole or in part , without the expressed written permission of Hitachi, Ltd. 8.The products (technologies) described in this data sheets are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety not are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. For inquiries relating to the products, please contact nearest overseas representatives which is located "Inquiry" portion on the top page of a home page. Hitachi power semiconductor home page address http://www.hitachi.co.jp/pse |
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