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| Power Transistors 2SD2242, 2SD2242A Silicon NPN triple diffusion planar type Darlington For power amplification Unit: mm 5.00.1 10.00.2 1.0 s Features 13.00.2 4.20.2 q q q 2.50.2 High foward current transfer ratio hFE High-speed switching Allowing supply with the radial taping (TC=25C) 90 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD2242 2SD2242A 2SD2242 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1.20.1 C1.0 2.250.2 18.00.5 Solder Dip Ratings 60 80 60 80 5 8 4 15 2 150 -55 to +150 Unit V 0.350.1 0.650.1 1.050.1 0.550.1 0.550.1 emitter voltage 2SD2242A Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature V V A A W C C C1.0 123 2.50.2 2.50.2 1:Base 2:Collector 3:Emitter MT4 Type Package Internal Connection C B s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD2242 2SD2242A 2SD2242 2SD2242A 2SD2242 2SD2242A (TC=25C) Symbol ICBO ICEO IEBO VCEO hFE1 hFE2* VBE VCE(sat) fT ton tstg tf Conditions VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCE = 30V, IB = 0 VCE = 40V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 3V, IC = 0.5A VCE = 3V, IC = 3A VCE = 3V, IC = 3A IC = 3A, IB = 12mA IC = 5A, IB = 20mA VCE = 10V, IC = 0.5A, f = 1MHz IC = 3A, IB1 = 12mA, IB2 = -12mA, VCC = 50V 20 0.5 4 1 60 80 1000 2000 min typ E max 200 200 500 500 2 Unit A A mA V Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE2 10000 2.5 2 4 V V MHz s s s Rank classification Q P 2000 to 5000 4000 to 10000 Rank hFE2 1 Power Transistors PC -- Ta 20 10 (1) TC=Ta (2) Without heat sink (PC=2.0W) TC=25C IB=4.0mA 2SD2242, 2SD2242A IC -- VCE 10 VCE=3V IC -- VBE Collector power dissipation PC (W) Collector current IC (A) 15 (1) Collector current IC (A) 8 6 3.5mA 3.0mA 2.5mA 2.0mA 1.5mA 1.0mA 0.5mA 8 25C 6 TC=100C -25C 10 4 4 5 (2) 2 2 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 0 0 0.8 1.6 2.4 3.2 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=250 30 10 3 1 TC=100C -25C 0.3 0.1 0.03 0.01 0.01 0.03 25C 105 hFE -- IC 10000 Cob -- VCB Collector output capacitance Cob (pF) VCE=3V IE=0 f=1MHz TC=25C Forward current transfer ratio hFE 3000 1000 300 100 30 10 3 1 0.1 TC=100C 104 25C -25C 103 102 0.1 0.3 1 3 10 10 0.01 0.03 0.1 0.3 1 3 10 0.3 1 3 10 30 100 Collector current IC (A) Collector current IC (A) Collector to base voltage VCB (V) Area of safe operation (ASO) 100 30 Non repetitive pulse TC=25C 1000 Rth(t) -- t Note: Rth was measured at Ta=25C and under natural convection. (1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink 100 (1) (2) 10 10 ICP IC 3 1 0.3 0.1 0.03 0.01 1 3 10 30 100 300 1000 10ms DC t=1ms Thermal resistance Rth(t) (C/W) Collector current IC (A) 1 2SD2242 2SD2242A 0.1 10-3 10-2 10-1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2 |
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