 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| HiPerFETTM Power MOSFETs IXFR 26N60Q ISOPLUS247TM Q-CLASS (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalance Rated, High dV/dt Low Gate Charge and Capacitances VDSS = 600 V ID25 = 23 A RDS(on) = 250 mW trr 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C TC = 25C, Note 1 TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS TJ 150C, RG = 2 W TC = 25C Maximum Ratings 600 600 20 30 23 92 26 45 1.5 5 310 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W C C C C V~ g ISOPLUS 247TM E153432 G = Gate S = Source * Patent pending D = Drain 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min 250 2500 5 Features * Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation * IXYS advanced low Qg process * Low gate charge and capacitances - easier to drive - faster switching * Low drain to tab capacitance(<30pF) * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Rated for Unclamped Inductive Load Switching (UIS) * Fast intrinsic Rectifier Applications * DC-DC converters * Battery chargers * Switched-mode and resonant-mode power supplies * DC choppers * AC & DC motor control Advantages * Easy assembly * Space savings * High power density 98727 (06/09/00) Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 2.5 V 4.5 V 100 nA TJ = 25C TJ = 125C 25 mA 1 mA 250 mW VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250mA VDS = VGS, ID = 4mA VGS = 20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = IT Notes 2, 3 IXYS reserves the right to change limits, test conditions, and dimensions. (c) 2000 IXYS All rights reserved 1-2 IXFR 26N60Q Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Notes 2, 3 14 22 5100 VGS = 0 V, VDS = 25 V, f = 1 MHz 560 210 30 VGS = 10 V, VDS = 0.5 * VDSS, ID = IT RG = 2.0 W (External), Notes 2, 3 32 80 15 150 VGS = 10 V, VDS = 0.5 * VDSS, ID = IT Notes 2, 3 34 80 0.4 0.15 200 S pF pF pF ns ns ns ns nC nC nC K/W K/W Dim. Millimeter Min. Max. A 4.83 5.21 A1 2.29 2.54 A2 1.91 2.16 b 1.14 1.40 1.91 2.13 b1 b2 2.92 3.12 C 0.61 0.80 D 20.80 21.34 E 15.75 16.13 e 5.45 BSC L 19.81 20.32 L1 3.81 4.32 Q 5.59 6.20 R 4.32 4.83 S 13.21 13.72 T 15.75 16.26 U 1.65 3.03 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 .520 .540 .620 .640 .065 .080 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection ISOPLUS 247 (IXFR) OUTLINE gfs C iss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = IT Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; Note 1 IF = IT, VGS = 0 V, Notes 2, 3 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 26 104 1.5 250 A A V ns mC A IF = 50A,-di/dt = 100 A/ms, VR = 100 V 1.0 10 Note: 1. Pulse width limited by TJM 2. Pulse test, t 300 ms, duty cycle d 2 % 3. IT = 13A (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2 |
Price & Availability of IXFR26N60Q
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |