 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| PD- 93925 PROVISIONAL IRFBA31N50L HEXFET(R) Power MOSFET SMPS MOSFET Applications Telecom and Data-Com off-Line SMPS l Motor Control l UninterruptIble Power Supply Benefits l Low On-Resistance l High Speed Switching l Low Gate Drive Current Due to Improved Gate Charge Characteristics l Built in Fast Recovery Diode l Improved Avalanche Ruggedness and Dynamic dv/dt, Fully Characterized Avalanche Voltage and Current l VDSS 500V RDS(on) 0.152 ID 31A Super-220TM Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Recommended clip force Max. 31 19 124 360 2.9 30 5.0 -55 to + 150 300 20 Units A W W/C V V/ns C N Diode Characteristics Symbol IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 31 --- --- showing the A G integral reverse --- --- 124 S p-n junction diode. --- --- 1.5 V TJ = 25C, IS = 31A, VGS = 0V --- 180 --- ns TJ = 125C, IF = 31A --- 800 --- nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Typical SMPS Topologies l Zero Voltage Switching Full and Half Bridge Circuits www.irf.com 1 6/2/00 IRFBA31N50L Symbol V(BR)DSS V(BR)DSS/TJ PROVISIONAL Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions 500 --- --- V VGS = 0V, ID = 250A --- 0.55 --- V/C Reference to 25C, ID = 1mA --- --- 0.152 VGS = 10V, ID = 19A 3.5 --- 5.5 V VDS = V GS, ID = 250A --- --- 50 A VDS = 500V, VGS = 0V --- --- 2.0 mA VDS = 400V, VGS = 0V, TJ = 125C --- --- 100 VGS = 30V nA --- --- -100 VGS = -30V RDS(on) VGS(th) IDSS IGSS Dynamic @ TJ = 25C (unless otherwise specified) Symbol gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 12 --- --- --- --- --- --- --- --- --- --- Typ. --- --- --- --- 20 60 45 40 5300 540 33 Max. Units Conditions --- S VDS = 50V, ID = 19A 195 ID = 31A 75 nC VDS = 400V 90 VGS = 10V, --- VDD = 250V --- ID = 31A ns --- RG = 4.3 --- VGS = 10V, --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz Avalanche Characteristics Symbol EAS IAR EAR Parameter Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. --- --- --- Max. 760 31 36 Units mJ A mJ Thermal Resistance Symbol RJC RCS RJA Notes: Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. --- 0.50 --- Max. 0.35 --- 58 Units C/W Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400s; duty cycle 2%. Starting TJ = 25C, L = 4.3mH, RG = 25, IAS = 31A, ISD 31A, di/dt TBDA/s, VDD V(BR)DSS, TJ 150C 2 www.irf.com PROVISIONAL IRFBA31N50L Super-220TM Package Outline IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 6/00 www.irf.com 3 |
Price & Availability of IRFBA31N50L
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |