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TrenchStop(R) Series
IGB30N60T q
Low Loss IGBT in TrenchStop(R) and Fieldstop technology
* * * * * Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time - 5s Designed for : - Frequency Converters - Uninterruptible Power Supply TrenchStop(R) and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed Positive temperature coefficient in VCE(sat) Low EMI Pb-free lead plating; RoHS compliant 1 Qualified according to JEDEC for target applications Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 600V IC 30A VCE(sat),Tj=25C 1.5V Tj,max 175C Marking Code G30T60 Package P-TO-263-3-2
C
G
E
P-TO-263-3-2
* * * * *
Type IGB30N60T
Maximum Ratings Parameter Collector-emitter voltage DC collector current, limited by Tjmax TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area (VCE 600V, Tj 175C) Gate-emitter voltage Short circuit withstand time
2)
Symbol VCE IC
Value 600 60 30
Unit V A
ICpul s VGE tSC Ptot Tj Tstg -
90 90 20 5 187 -40...+175 -55...+175 220 V s W C
VGE = 15V, VCC 400V, Tj 150C Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering temperature (reflow soldering, MSL1)
1 2)
J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2.1 June 06
Power Semiconductors
TrenchStop(R) Series
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Thermal resistance, junction - ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 0 .2m A VCE(sat) V G E = 15 V , I C = 30 A T j =2 5 C T j =1 7 5 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 0. 43m A , VCE=VGE V C E = 60 0 V, V G E = 0V T j =2 5 C T j =1 7 5 C Gate-emitter leakage current Transconductance Integrated gate resistor Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current
1)
IGB30N60T q
Max. Value 0.80 Unit K/W
Symbol RthJC RthJA
Conditions
6 cm Cu
40
Symbol
Conditions
Value min. 600 4.1 typ. 1.5 1.9 4.9 max. 2.05 5.7
Unit
V
A 16.7 40 1000 100 nA S
IGES gfs RGint
V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 30 A
Ciss Coss Crss QGate LE IC(SC)
V C E = 25 V , V G E = 0V , f= 1 MH z V C C = 48 0 V, I C =3 0 A V G E = 15 V
-
1630 108 50 167 7 275
-
pF
nC nH A
V G E = 15 V ,t S C 5 s V C C = 4 0 0 V, T j = 15 0 C
-
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 2 Rev. 2.1 June 06
Power Semiconductors
TrenchStop(R) Series
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =2 5 C , V C C = 40 0 V, I C = 3 0 A, V G E = 0/ 15 V , R G = 10 . 6 , 1) L =1 3 6n H, 1) C = 3 9p F Energy losses include "tail" and diode reverse recovery. Symbol Conditions
IGB30N60T q
Value min. Typ. 23 21 254 46 0.69 0.77 1.46 max. mJ Unit
ns
Switching Characteristic, Inductive Load, at Tj=175 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =1 7 5 C, V C C = 40 0 V, I C = 3 0 A, V G E = 0/ 15 V , R G = 1 0. 6 1) L =1 3 6n H, 1) C = 3 9p F Energy losses include "tail" and diode 2) reverse recovery. 24 26 292 90 1.0 1.1 2.1 mJ ns Symbol Conditions Value min. Typ. max. Unit
1)
Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E. 3 Rev. 2.1 June 06
Power Semiconductors
TrenchStop(R) Series
IGB30N60T q
tp=2s
90A 80A
10s
IC, COLLECTOR CURRENT
60A 50A 40A 30A 20A 10A 0A 100H z
T C =80C T C =110C
IC, COLLECTOR CURRENT
70A
10A 50s
1A DC
1ms 10ms
Ic
Ic
1kHz 10kH z 100kH z
0,1A 1V
10V
100V
1000V
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 175C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 10)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 175C; VGE=15V)
160W
50A
IC, COLLECTOR CURRENT
Ptot, POWER DISSIPATION
40A
120W
30A
80W
20A
40W
10A
0W 25C
50C
75C
100C 125C 150C
0A 25C
75C
125C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 175C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 175C)
Power Semiconductors
4
Rev. 2.1 June 06
TrenchStop(R) Series
80A 70A 50A V GE =20V 15V 13V 11V 9V 7V V GE =20V
IGB30N60T q
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
60A 50A 40A 30A 20A 10A 0A
40A
15V 13V
30A
11V 9V
20A
7V
10A
0A 0V 1V 2V 3V 0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175C)
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
50A
2.5V
IC =60A
IC, COLLECTOR CURRENT
40A
2.0V IC =30A
30A
1.5V
20A T J = 1 7 5 C 2 5 C 0A
1.0V
IC =15A
10A
0.5V
0.0V
0V
2V
4V
6V
8V
0C
50C
100C
150C
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V)
TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
Power Semiconductors
5
Rev. 2.1 June 06
TrenchStop(R) Series
IGB30N60T q
t d(off)
t d(off)
t, SWITCHING TIMES
t, SWITCHING TIMES
100ns
tf
t d(on)
tf 100ns
10ns tr
t d(on)
tr
1ns
0A
10A
20A
30A
10ns
10
20
30
40
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175C, VCE = 400V, VGE = 0/15V, RG = 10, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ = 175C, VCE= 400V, VGE = 0/15V, IC = 30A, Dynamic test circuit in Figure E)
7V 6V m ax. 5V 4V 3V 2V 1V 0V -50C m in. typ.
t d(off)
100n s tf
t d(on)
tr 10 ns 25C
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
t, SWITCHING TIMES
50 C
75C
100C 12 5C 150C
0C
50C
100C
150C
TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 30A, RG=10, Dynamic test circuit in Figure E)
TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.43mA)
Power Semiconductors
6
Rev. 2.1 June 06
TrenchStop(R) Series
*) Eon and Ets include losses due to diode recovery
IGB30N60T q
5.0mJ
Ets*
*) E on a nd E ts in clu d e lo ss e s d u e to d io d e rec o v e ry E ts * 3 .0m J
E, SWITCHING ENERGY LOSSES
4.0mJ
E, SWITCHING ENERGY LOSSES
3.0mJ
E off 2 .0m J
2.0mJ
Eoff
1 .0m J E on *
1.0mJ Eon* 0A 10A 20A 30A 40A 50A
0.0mJ
0 .0m J
0 10 20 30 40
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ = 175C, VCE = 400V, VGE = 0/15V, RG = 10, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ = 175C, VCE = 400V, VGE = 0/15V, IC = 30A, Dynamic test circuit in Figure E)
2.0mJ
*) Eon and Ets include losses due to diode recovery Ets*
*) E on and E ts include losse s 3 .0m J due to diode reco very
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
1.5mJ
2 .5m J 2 .0m J E ts * 1 .5m J 1 .0m J 0 .5m J 0 .0m J 3 00V E on * E off
1.0mJ
Eoff
0.5mJ
Eon*
0.0mJ 25C
50C
75C
100C 125C 150C
350V
400V
450 V
500V
550 V
TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 30A, RG = 10, Dynamic test circuit in Figure E)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175C, VGE = 0/15V, IC = 30A, RG = 10, Dynamic test circuit in Figure E)
Power Semiconductors
7
Rev. 2.1 June 06
TrenchStop(R) Series
IGB30N60T q
C iss
VGE, GATE-EMITTER VOLTAGE
1nF
15V 120V 10V 480V
c, CAPACITANCE
5V
100pF
C oss
C rss
0V 0nC 30nC 60nC 90nC 120nC 150nC 180n C
0V
10V
20V
30V
40V
QGE, GATE CHARGE Figure 17. Typical gate charge (IC=30 A)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz)
12s
IC(sc), short circuit COLLECTOR CURRENT
400A
tSC, SHORT CIRCUIT WITHSTAND TIME
10s 8s 6s 4s 2s 0s 10V
300A
200A
100A
0A 12V
14V
16V
18V
11V
12V
13V
14V
VGE, GATE-EMITTETR VOLTAGE Figure 19. Typical short circuit collector current as a function of gateemitter voltage (VCE 400V, Tj 150C)
VGE, GATE-EMITETR VOLTAGE Figure 20. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25C, TJmax<150C)
Power Semiconductors
8
Rev. 2.1 June 06
TrenchStop(R) Series
IGB30N60T q
ZthJC, TRANSIENT THERMAL RESISTANCE
D=0.5
0.2 10 K/W
-1
0.1 0.05
R,(K/W) 0.29566 0.25779 0.19382 0.05279
, (s) 6.478*10-2 6.12*10-3 4.679*10-4 6.45*10-5
R2
0.02 10 K/W
-2
R1
0.01
C 1 = 1 /R 1
C 2 = 2 /R 2
single pulse
1s
10s 100s
1ms
10ms 100ms
tP, PULSE WIDTH Figure 21. IGBT transient thermal resistance (D = tp / T)
Power Semiconductors
9
Rev. 2.1 June 06
TrenchStop(R) Series
P-TO-263-3-2
IGB30N60T q
Power Semiconductors
10
Rev. 2.1 June 06
TrenchStop(R) Series
i,v diF /dt
IGB30N60T q
tr r =tS +tF Qr r =QS +QF tr r
IF
tS QS
tF 10% Ir r m t VR
Ir r m
QF
dir r /dt 90% Ir r m
Figure C. Definition of diodes switching characteristics
1
Tj (t) p(t)
r1
r2
2
n
rn
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
Power Semiconductors
11
Rev. 2.1 June 06
TrenchStop(R) Series
IGB30N60T q
Edition 2006-01 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 6/14/06. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Power Semiconductors
12
Rev. 2.1 June 06

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