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| IDC08S60C 2nd generation thinQ!TM SiC Schottky Diode FEATURES: * * * * * * Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior No forward recovery High surge current capability Applications: * SMPS, PFC, snubber C A Chip Type IDC08S60C VBR 600V IF 8A Die Size 1.658 x 1.52 mm2 Package sawn on foil MECHANICAL PARAMETER: Raster size Anode pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Anode metalization Cathode metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 1.658x 1.52 mm 1.421 x 1.283 2.52 / 1.95 355 75 0 1443 pcs Photoimide 3200 nm Al 1400 nm Ni Ag -system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al, 350m 0.3 mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23C mm m mm deg 2 Edited by INFINEON Technologies, AIM PMD D CID CLS, Edition 1, 27.04.2006 IDC08S60C Maximum Ratings Parameter Repetitive peak reverse voltage DC blocking voltage Continuous forward current limited by Tjmax Surge non repetitive forward current sine halfwave Symbol V RRM V DC IF I F , SM I F, RM I F,max Tj , Ts t g Condition Value 600 600 8 Unit V TC =25 C, tP =10 ms TC = 100 C, T j = 1 5 0 C, D=0.1 TC =25 C, tp=10s 59 35 264 -55...+175 A Repetitive peak forward current limited by Tjmax Non-repetitive peak forward current Operating junction and storage temperature C Static Electrical Characteristics (tested on chip), Tj=25 C, unless otherwise specified Value min. Typ. 1 1.5 max. 100 1.7 Parameter Reverse current Diode forward voltage Symbol IR VF V R =600V I F =8A Conditions Tj= 2 5 C Tj= 2 5 C Unit A V Dynamic Electrical Characteristics, at Tj = 25 C, unless otherwise specified, tested at component Parameter Symbol Conditions Value min. Typ. 19 max. Unit Total capacitive charge QC I F <=I F , m a x di/dt=200A/s V R =400V Tj = 150 C nC Switching time 1) tc Tj = 150 C <10 ns V R = 1V Total capacitance C f=1MHz 310 50 50 pF V R = 3 0 0V V R = 600V 1) tc is the time constant for the capacitive displacement current waveform (independent from Tj, ILOAD and di/dt), different from trr which is dependent on Tj, ILOAD and di/dt. No reverse recovery time constant trr due to absence of minority carrier injection Edited by INFINEON Technologies, AIM PMD D CID CLS, Edition 1, 27.04.2006 IDC08S60C CHIP DRAWING: Edited by INFINEON Technologies, AIM PMD D CID CLS, Edition 1, 27.04.2006 IDC08S60C FURTHER ELECTRICAL CHARACTERISTICS: This chip data sheet refers to the device data sheet INFINEON TECHNOLOGIES IDT08S60C Description: AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Pruffeld Published by Infineon Technologies AG 81726 Munich, Germany (c) Infineon Technologies AG 2000 All Rights Reserved Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives world-wide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Edited by INFINEON Technologies, AIM PMD D CID CLS, Edition 1, 27.04.2006 |
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