View BTS3410G_655447.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

HITFETO BTS 3410 G
Smart Dual Lowside Power Switch
Features * Logic Level Input * Input Protection (ESD) * Thermal shutdown with auto restart * Overload protection * Short circuit protection * Overvoltage protection * Current limitation * Analog driving possible Product Summary Drain source voltage On-state resistance Nominal load current Clamping energy VDS RDS(on) ID(Nom) EAS 42 200 1.3 150 V mW A mJ
Application
* All kinds of resistive, inductive and capacitive loads in switching or linear applications * C compatible power switch for 12 V DC applications * Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS O technology. Fully protected by embedded protection functions.
Vbb
M
HITFET a
In1 Pin 2
Drain1 Pin 7and 8
Logic Channel 1
Source1 Drain2
Pin 1
In2 Pin 4
Pin 5and 6
Logic Channel 2
Source2
Pin 3
Complete product spectrum and additional information http://www.infineon.com/hitfet
Page 1
2004-03-05
BTS 3410 G Pin Description Pin 1 2 3 4 5 6 7 8 Symbol S1 IN1 S2 IN2 D2 D2 D1 D1 Function Source Channel 1 Input Channel 1 Source Channel 2 Input Channel 2 Drain Channel 2 Drain Channel 2 Drain Channel 1 Drain Channel 1
S1 IN1 S2 IN2 1* 2 3 4 8 7 6 5 D1 D1 D2 D2
Pin Configuration (Top view)
P-DSO-8-7
HITFET
a
Drain1
Pin 7, 8
Current Limitation
OvervoltageProtection
Vbb
In1 Pin 2
Gate-Driving Unit M
ESD
Overload Protection
Over- temperature Protection
Short circuit Protection
Pin 1 Source1 Drain2 Pin 5, 6
Current Limitation
OvervoltageProtection
Vbb
In2 Pin 4
Gate-Driving Unit M
ESD
Overload Protection
Over- temperature Protection
Short circuit Protection
Pin 3 Source2
Page 2
2004-03-05
BTS 3410 G Maximum Ratings at Tj = 25C, unless otherwise specified Parameter Drain source voltage Symbol VDS Value 42 18 mA no limit | IIN | 2 Tj Tstg Ptot EAS VLD -40 ...+150 -55 ... +150 0.8 150 50 W mJ V C Unit V
Drain source voltage for short circuit protection 1) VDS(SC) Tj = -40...150 C Continuous input current1) -0.2V VIN 10V VIN < -0.2V or VIN > 10V Operating temperature Storage temperature Power dissipation2)5) TA = 85 C Unclamped single pulse inductive energy1) each channel Load dump protection VLoadDump1)3) = VA + VS VIN = 0 and 10 V, td = 400 ms, RI = 2 W, RL = 9 W, VA = 13.5 V Electrostatic discharge voltage1) (Human Body Model) VESD according to Jedec norm EIA/JESD22-A114-B, Section 4 Jedec humidity category,J-STD-20-B IEC climatic category; DIN EN 60068-1 Thermal resistance junction - ambient: per channel one channel on both channels on RthJA IIN
2
kV
MSL1 40/150/56
K/W 100 160
@ 6 cm 2 cooling area2)
1not subject to production test, specified by design 2 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for drain connection. PCB mounted vertical without blown air. 3V Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
5 not subject to production test, calculated by R THJA and Rds(on)
Page 3
2004-03-05
BTS 3410 G Electrical Characteristics Parameter at Tj = 25C, unless otherwise specified Characteristics Drain source clamp voltage Tj = - 40 ...+ 150, ID = 10 mA Off-state drain current Tj = -40 ... +150C VDS = 32 V, VIN = 0 V Input threshold voltage ID = 0.3 mA, Tj = 25 C ID = 0.3 mA, Tj = 150 C On state input current On-state resistance VIN = 5 V, ID = 1.4 A, Tj = 25 C VIN = 5 V, ID = 1.4 A, Tj = 150 C On-state resistance VIN = 10 V, I D = 1.4 A, Tj = 25 C VIN = 10 V, I D = 1.4 A, Tj = 150 C Nominal load current per channel5) VDS = 0.5 V, Tj < 150C, VIN = 10 V, T A = 85 C, one channel on both channels on Current limit (active if VDS>2.5 V)2) VIN = 10 V, VDS = 12 V, t m = 200 s ID(lim) 1.3 1 5 1.65 1.3 7.5 10 ID(Nom) RDS(on) 150 280 200 400 A IIN(on) RDS(on) 190 350 240 480 VIN(th) 1.3 0.8 1.7 10 2.2 30 A mW V IDSS 1.5 10 A VDS(AZ) 42 55 V Symbol min. Values typ. max. Unit
1not subject to production test, specified by design 2Device switched on into existing short circuit (see diagram Determination of I D(lim) ). If the device is in on condition and a short circuit occurs, these values might be exceeded for max. 50 s.
5 not subject to production test, calculated by R THJA and Rds(on)
Page 4
2004-03-05
BTS 3410 G Electrical Characteristics Parameter at Tj = 25C, unless otherwise specified Dynamic Characteristics Turn-on time VIN to 90% ID : ton toff -dVDS/dt on dVDS/dtoff 45 60 0.4 0.6 100 100 1.5 1.5 V/s s RL = 4.7 W, VIN = 0 to 10 V, Vbb = 12 V Turn-off time VIN to 10% ID: RL = 4.7 W, VIN = 10 to 0 V, Vbb = 12 V Slew rate on 70 to 50% Vbb: RL = 4.7 W, VIN = 0 to 10 V, Vbb = 12 V Slew rate off 50 to 70% Vbb: RL = 4.7 W, VIN = 10 to 0 V, Vbb = 12 V Protection Functions1) Thermal overload trip temperature Thermal hysteresis2) Input current protection mode Input current protection mode Tj = 150 C Unclamped single pulse inductive energy2) each channel ID = 0.9 A, Tj = 25 C, Vbb = 12 V EAS 150 mJ Tjt DTjt IIN(Prot) IIN(Prot) 150 25 175 10 50 40 300 300 C K A Symbol min. Values typ. max. Unit
Inverse Diode
Inverse diode forward voltage IF = 7 A, tm = 250 s, VIN = 0 V, tP = 300 s VSD 1 V
1Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 2not subject to production test, specified by design Page 5
2004-03-05
BTS 3410 G
Block diagram
Terms Inductive and overvoltage output clamp
RL
V
I IN IN HITFET S D ID VDS Vbb
Z
D
S
VIN
HITFET
Input circuit (ESD protection)
Short circuit behaviour
Gate Drive Input
V IN
Source/ Ground
IIN
ID S
T j
Page 6
2004-03-05
BTS 3410 G 1 Overall maximum allowable power dissipation; P tot = f(TS) resp. P tot = f(TA) @ R thJA=80 K/W
3
2 On-state resistance RON = f(Tj ); ID=1.4A; V IN=10V
500
mW
W
400
T
max.
RDS(on)
Ptot
2
T
S
350 300 250 200
typ.
A
1.5
1
150 100 50
0.5
0 -50
-25
0
25
50
75
100
C Tj
150
0 -50
-25
0
25
50
75
100 125 C
175
Tj
3 On-state resistance RON = f(T j); ID= 1.4A; V IN=5V
500
4 Typ. input threshold voltage VIN(th) = f(Tj); ID = 0.15 mA; VDS = 12V
2
V
max.
mW
400
1.6
RDS(on)
350 300 250 200 150 100 50 0 -50 100 125 C
VGS(th)
typ.
1.4 1.2 1 0.8 0.6 0.4 0.2
-25
0
25
50
75
175
0 -50
-25
0
25
50
75
100
C
150
Tj
Page 7
Tj
2004-03-05
BTS 3410 G 5 Typ. transfer characteristics I D=f(V IN); VDS=12V; T Jstart=25C
8
A
6 Typ. short circuit current ID(lim) = f(Tj); VDS=12V Parameter: VIN
10
A
8 6
ID
5
ID(lim)
7 6 5
5V
Vin=10V
4
3
4 3
2 2 1 1
V
0 0
1
2
3
4
5
6
7
8
10
0 -50
-25
0
25
50
75
100 125 C
175
VIN
Tj
7 Typ. output characteristics I D=f(V DS); T Jstart=25C Parameter: VIN
10
A Vin=10V 7V
8 Typ. off-state drain current IDSS = f(Tj)
11
A max.
8
6V
9
5V 4V
7
8
IDSS
ID
6 5 4
7 6 5 4
3 2 1 0 0
V 3V
3 2 1
typ.
1
2
3
4
6
0 -50
-25
0
25
50
75
100 125 C
175
VDS
Page 8
Tj
2004-03-05
BTS 3410 G 9 Typ. overload current ID(lim) = f(t), Vbb=12 V, no heatsink Parameter: Tjstart
12
10 Typ. transient thermal impedance ZthJA=f(tp) @ 6 cm2 cooling area Parameter: D=tp/T ; one channel on
10 2
K/W
A -40C
10 1
ID(lim)
8
85C
ZthJA
10 0
25C
6
150C
4 10 -1 2
D=0.5 D=0.2 D=0.1 D=0.05 D=0.02 D=0.01 D=0
0 0
0.5
1
1.5
2
2.5
3
ms
4
10 -2 -6 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 10
s tP
10
4
t
11 Determination of ID(lim) ID(lim) = f(t); t m = 200s Parameter: TJstart
12
12 Typ. transient thermal impedance ZthJA=f(tp) @ 6 cm2 cooling area Parameter: D=tp/T ; both channels on
10 3
K/W
10 2
A
ID(lim)
8
ZthJA
-40C 25C
10 1
6
85C
10 0 4
150C
10 -1 2
D=0.5 D=0.2 D=0.1 D=0.05 D=0.02 D=0.01 D=0
0 0
0.1
0.2
0.3
0.4
ms
0.55
10 -2 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10
s tP
10
4
t
Page 9
2004-03-05
BTS 3410 G
Package P-DSO-8-7
1.75 MAX. 0.1 MIN. (1.5)
Ordering Code Q67060-S6125-A101
0.33 0.08 x 45 4 -0.21)
8 MAX.
0.2 +0.05 -0
.01
1.27
0.41 +0.1 -0.05
0.1
C
6 0.2
0.64 0.25
0.2 M A C x8
8
5
Index Marking 1
4
5 -0.21)
1)
A
Index Marking (Chamfer) Does not include plastic or metal protrusion of 0.15 max. per side
Page 10
2004-03-05
BTS 3410G
Revision History : Previous version : Page 3, 6 3, 4 3 3 3 4 2004-03-05 2003-04-22
Subjects (major changes since last revision) Footnote 2 extended to Vin<0V, Etot and TjT Footnote 5 implemented to Ptot and ID(nom) ESD test condition changed from MIL STD 883D, methode 3015.7 and EOS/ESD assn. standard S5.1-1993 to Jedec Norm EIA/JESD22-A114-B, Section 4 Humidity category classification changed from DIN 40040 value E to J-STD-20-B value MSL1 climatic category changed from DIN IEC 68-1 to DIN EN 60068-1 VIN(th) test conditions from ID=0.15mA to ID=0.3mA
For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or the Infineon Technologies Companies and Representatives worldwide: see our webpage at http://www.infineon.com HITFET(R), SIPMOS(R) are registered trademarks of Infineon Technologies AG.
Edition 2004-02-02 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 Munchen, Germany (c) Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Page 11
2004-03-05

▲Up To Search▲

Price & Availability of BTS3410G

	To Download BTS3410G Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .