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| Semiconductor SHE124PGHE / SHE124PGHE(B) High Efficiency LED Lamp Features * * * * Green Colored lens type 5mm(T-13/4) all plastic mold type Viewing angles : 30 Super luminosity * E ; ESD Protected (2.0KV, 3 Times @100pF, 1.5K) Application * Traffic Signal * Message Board * Variable message signs(VMS) Outline Dimensions STRAIGHT TYPE 4.80~5.20 unit : mm STOPPER TYPE : (B) 4.80~5.20 8.40~8.80 0.60~1.00 8.40~8.80 0.60~1.00 3.00~4.00 0.50 Typ. 25.00 Min. 0.50 Typ. 25.00 Min. 1.00 Min. 2.54 Typ. 2.54 Typ. 1.00 Min. 1 2 5.60~6.00 1 2 5.60~6.00 PIN Connections 1. Anode 2. Cathode KSD-O3B010-000 1 SHE124PGHE / SHE124PGHE(B) Absolute Maximum Ratings Characteristic Power dissipation Forward current * Peak forward current Operating temperature range Storage temperature range 2 1 (Ta=25oC) Symbol PD IF IFP Topr Tstg Ratings 150 40 65 -2585 -30100 Unit mW mA mA * Soldering temperature Tsol 260 for 10 seconds *1.Duty ratio = 1/16, Pulse width = 0.1ms *2.Keep the distance more than 2.0mm from PCB to the bottom of LED package Recommend document -. LED is very sensitive to ESD. Electrical / Optical Characteristics Characteristic Forward voltage (Ta=25oC) Symbol VF IV Test Condition IF= 20mA IF= 20mA IF= 20mA IF= 20mA IF= 20mA Min 1760 515 - Typ 3.2 523 30 15 Max 3.8 8910 530 - Unit V mcd nm nm Deg *4Luminous intensity Dominant wavelength Spectrum bandwidth *3Half angle D 1/2 *3. 1/2 is the off-axis angle where the luminous intensity is 1/2 the peak intensity *4. Luminous intensity maximum tolerance for each grade classification limit is 18% *4. Luminous Intensity Classification S 1760~2640 T 2640~3960 U 3960~5940 V 5940~8910 KSD-O3B010-000 2 SHE124PGHE / SHE124PGHE(B) Characteristic Diagrams Fig. 1 IF - VF Fig. 2 IV - IF Forward Voltage VF [V] Luminous Intensity Iv [mcd] Forward Current IF [mA] Forward Current IF [mA] Fig. 3 IF - Ta Fig.4 Spectrum Distribution Current IF [mA] Forward Ambient Temperature Ta [] Relative Intensity [%] Wavelength [nm] Fig. 5 Radiation Diagram Relative Luminous Intensity [%] KSD-O3B010-000 3 1. ESD(Electro Static Discharge) : Chip Al2o3 (Sapphire: ) Chip Damage VF Down 2. ESD 2-1. ESD (Electro Static Discharge) : (+) (-) ( , , , ) (-) (+) (+) (-) . : , , , , , : , , , , : , . 2-2. -. . 80% . (10%~20%) (65%~90%) Table 6[KV] 0.1[KV] 7[KV] 0.6[KV] 20[KV] 1.2[KV] -. -. : Wrist Strap ( ), Heel Grounder, , , , -. Conveyer Table : Conductive Floor Mat ESD . KSD-O3B010-000 4 SHE124PGHE / SHE124PGHE(B) The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. KSD-O3B010-000 5 |
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