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ON Semiconductort
Dual Schottky Barrier Diodes
Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT-363 package is a solution which simplifies circuit design, reduces device count, and reduces board space by putting two discrete devices in one small six-leaded package. The SOT-363 is ideal for low-power surface mount applications where board space is at a premium, such as portable products.
Surface Mount Comparisons:
SOT-363 Area (mm2) Max Package PD (mW) Device Count 4.6 120 2 SOT-23 7.6 225 1
MBD110DWT1 MBD330DWT1 MBD770DWT1
ON Semiconductor Preferred Devices
6
5
4
1
2
3
CASE 419B-01, STYLE 6 SOT-363
Space Savings:
Package SOT-363 1 SOT-23 40% 2 SOT-23 70%
Anode 1 N/C 2 Cathode 3
6 Cathode 5 N/C 4 Anode
The MBD110DW, MBD330DW, and MBD770DW devices are spin-offs of our popular MMBD101LT1, MMBD301LT1, and MMBD701LT1 SOT-23 devices. They are designed for high-efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. * Extremely Low Minority Carrier Lifetime * Very Low Capacitance * Low Reverse Leakage
MAXIMUM RATINGS
Rating Reverse Voltage MBD110DWT1 MBD330DWT1 MBD770DWT1 Symbol VR Value 7.0 30 70 120 -55 to +125 -55 to +150 Unit Vdc
Forward Power Dissipation TA = 25C Junction Temperature Storage Temperature Range
PF TJ Tstg
mW C C
DEVICE MARKING
MBD110DWT1 = M4 MBD330DWT1 = T4 MBD770DWT1 = H5 Thermal Clad is a trademark of the Bergquist Company.
(c) Semiconductor Components Industries, LLC, 2001
1
November, 2001 - Rev.3
Publication Order Number: MBD110DWT1/D
MBD110DWT1 MBD330DWT1 MBD770DWT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Reverse Breakdown Voltage (IR = 10 A) MBD110DWT1 MBD330DWT1 MBD770DWT1 CT MBD110DWT1 CT MBD330DWT1 MBD770DWT1 IR MBD110DWT1 MBD330DWT1 MBD770DWT1 NF MBD110DWT1 VF MBD110DWT1 MBD330DWT1 MBD770DWT1 -- -- -- -- -- 0.5 0.38 0.52 0.42 0.7 0.6 0.45 0.6 0.5 1.0 -- 6.0 -- Vdc -- -- -- 0.02 13 9.0 0.25 200 200 -- -- 0.9 0.5 1.5 1.0 A nAdc nAdc dB -- 0.88 1.0 pF Symbol V(BR)R 7.0 30 70 10 -- -- -- -- -- pF Min Typ Max Unit Volts
Diode Capacitance (VR = 0, f = 1.0 MHz, Note 1) Total Capacitance (VR = 15 Volts, f = 1.0 MHz) (VR = 20 Volts, f = 1.0 MHz) Reverse Leakage (VR = 3.0 V) (VR = 25 V) (VR = 35 V) Noise Figure (f = 1.0 GHz, Note 2) Forward Voltage (IF = 10 mA) (IF = 1.0 mAdc) (IF = 10 mA) (IF = 1.0 mAdc) (IF = 10 mA)
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MBD110DWT1 MBD330DWT1 MBD770DWT1
TYPICAL CHARACTERISTICS MBD110DWT1
1.0 0.7 0.5 IR, REVERSE LEAKAGE (m A) VR = 3.0 Vdc 0.2 0.1 0.07 0.05 100 IF, FORWARD CURRENT (mA)
10 TA = 85C TA = -40C
1.0 TA = 25C MBD110DWT1 0.4 0.5 0.6 VF, FORWARD VOLTAGE (VOLTS) 0.7 0.8
0.02 MBD110DWT1 0.01 30 40 50 60 70 80 90 100 110 TA, AMBIENT TEMPERATURE (C) 120 130
0.1 0.3
Figure 1. Reverse Leakage
Figure 2. Forward Voltage
1.0
11 10 NF, NOISE FIGURE (dB) 9 8 7 6 5 4 3 MBD110DWT1 2 4.0 1 0.1 0.2 MBD110DWT1 0.5 1.0 2.0 5.0 PLO, LOCAL OSCILLATOR POWER (mW) 10 LOCAL OSCILLATOR FREQUENCY = 1.0 GHz (Test Circuit Figure 5)
C, CAPACITANCE (pF)
0.9
0.8
0.7
0.6
0
1.0 2.0 3.0 VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitance
Figure 4. Noise Figure
LOCAL OSCILLATOR
NOTES ON TESTING AND SPECIFICATIONS Note 1 - CC and CT are measured using a capacitance bridge (Boonton Electronics Model 75A or equivalent). Note 2 - Noise figure measured with diode under test in tuned diode mount using UHF noise source and local oscillator (LO) frequency of 1.0 GHz. The LO power is adjusted for 1.0 mW. IF amplifier NF = 1.5 dB, f = 30 MHz, see Figure 5. Note 3 - LS is measured on a package having a short instead of a die, using an impedance bridge (Boonton Radio Model 250A RX Meter).
UHF NOISE SOURCE H.P. 349A
DIODE IN TUNED MOUNT
NOISE FIGURE METER H.P. 342A
IF AMPLIFIER NF = 1.5 dB f = 30 MHz
Figure 5. Noise Figure Test Circuit http://onsemi.com
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MBD110DWT1 MBD330DWT1 MBD770DWT1
TYPICAL CHARACTERISTICS MBD330DWT1
2.8 CT, TOTAL CAPACITANCE (pF) 2.4 2.0 1.6 1.2 0.8 0.4 0 0 3.0 6.0 9.0 12 15 18 21 VR, REVERSE VOLTAGE (VOLTS) 24 27 30 f = 1.0 MHz t , MINORITY CARRIER LIFETIME (ps) MBD330DWT1 500 400 KRAKAUER METHOD 300 200 100 0 MBD330DWT1
0
10
20
40 60 30 50 70 IF, FORWARD CURRENT (mA)
80
90
100
Figure 6. Total Capacitance
Figure 7. Minority Carrier Lifetime
10 MBD330DWT1 IR, REVERSE LEAKAGE (m A) 1.0 TA = 100C TA = 75C
100 IF, FORWARD CURRENT (mA)
MBD330DWT1 TA = -40C TA = 85C
10
0.1
0.01
TA = 25C
1.0 TA = 25C
0.001
0
6.0
12 18 VR, REVERSE VOLTAGE (VOLTS)
24
30
0.1
0.2
0.4
0.6 0.8 VF, FORWARD VOLTAGE (VOLTS)
1.0
1.2
Figure 8. Reverse Leakage
Figure 9. Forward Voltage
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MBD110DWT1 MBD330DWT1 MBD770DWT1
TYPICAL CHARACTERISTICS MBD770DWT1
2.0 CT, TOTAL CAPACITANCE (pF) 1.6 1.2 0.8 0.4 0 MBD770DWT1 500 f = 1.0 MHz t , MINORITY CARRIER LIFETIME (ps) MBD770DWT1 400 KRAKAUER METHOD 300 200 100 0
0
5.0
10
15 20 25 30 35 VR, REVERSE VOLTAGE (VOLTS)
40
45
50
0
10
20
30 50 70 40 60 IF, FORWARD CURRENT (mA)
80
90
100
Figure 10. Total Capacitance
Figure 11. Minority Carrier Lifetime
10
MBD770DWT1 TA = 100C TA = 75C
100 IF, FORWARD CURRENT (mA)
MBD770DWT1
IR, REVERSE LEAKAGE (m A)
1.0
10 TA = 85C TA = -40C
0.1
1.0 TA = 25C
0.01
TA = 25C
0.001
0
10
20 30 VR, REVERSE VOLTAGE (VOLTS)
40
50
0.1
0.2
0.4
0.8 1.2 VF, FORWARD VOLTAGE (VOLTS)
1.6
2.0
Figure 12. Reverse Leakage
Figure 13. Forward Voltage
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MBD110DWT1 MBD330DWT1 MBD770DWT1 INFORMATION FOR USING THE SOT-363 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection
0.5 mm (min)
interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process.
1.9 mm
SOT-363 SOT-363 POWER DISSIPATION The power dissipation of the SOT-363 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT-363 package, PD can be calculated as follows:
PD = TJ(max) - TA RJA SOLDERING PRECAUTIONS
The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 150 milliwatts.
PD = 150C - 25C 833C/W = 150 milliwatts
The 833C/W for the SOT-363 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 150 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT-363 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal CladTM. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint.
The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
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0.4 mm (min)
0.65 mm 0.65 mm
MBD110DWT1 MBD330DWT1 MBD770DWT1
PACKAGE DIMENSIONS SC-88 (SOT-363) CASE 419B-01 ISSUE G
A G V
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.
6
5
4
S
1 2 3
-B-
DIM A B C D G H J K N S V
D 6 PL
0.2 (0.008) N
M
B
M
INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 0.012 0.016
MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 0.30 0.40
J C
H
K
STYLE 6: PIN 1. 2. 3. 4. 5. 6.
ANODE 2 N/C CATHODE 1 ANODE 1 N/C CATHODE 2
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MBD110DWT1 MBD330DWT1 MBD770DWT1
Thermal Clad is a trademark of the Bergquist Company.
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative.
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MBD110DWT1/D

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