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CQD-4M CQD-4N 4.0 AMP TRIAC 600 THRU 800 VOLTS
Central
TM
Semiconductor Corp.
DESCRIPTION: The CENTRAL SEMICONDUCTOR CQD-4M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING CODE: FULL PART NUMBER
DPAK THYRISTOR CASE
MAXIMUM RATINGS: (TC=25C unless otherwise noted) SYMBOL Peak Repetitive Off-State Voltage RMS On-State Current (TC=80C) Peak One Cycle Surge (t=10ms) I2t Value for Fusing (t=10ms) Peak Gate Power (tp=10s) Average Gate Power Dissipation Peak Gate Current (tp=10s) Storage Temperature Junction Temperature VDRM IT(RMS) ITSM I 2t PGM PG (AV) IGM Tstg TJ CQD -4M 600 4.0 40 2.4 3.0 0.2 1.2 -40 to +150 -40 to +125 CQD -4N 800 UNITS V A A A2s W W A C C
ELECTRICAL CHARACTERISTICS: (TC=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM IDRM IGT IGT IH VGT VTM dv/dt Rated VDRM, RGK=1K Rated VDRM, RGK=1K, TC=125C VD=12V, QUAD I, II, III VD=12V, QUAD IV RGK=1K VD=12V, QUAD I, II, III, IV ITM=6.0A, tp=380s VD=2 /3 VDRM, TC=125C 11
TYP
MAX 10 200
UNITS A A mA mA mA V V V/s
2.5 5.4 1.6 0.95 1.25
5.0 9.0 5.0 1.75 1.75
R0 (20-May 2004)
Central
TM
Semiconductor Corp.
CQD-4M CQD-4N 4.0 AMP TRIAC 600 THRU 800 VOLTS
DPAK THYRISTOR CASE - MECHANICAL OUTLINE
LEAD CODE: 1) MT1 2) MT2 3) GATE 4) MT2 MARKING CODE: FULL PART NUMBER
SYMBOL A B C D E F G H J K L M N
DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0.086 0.094 2.18 2.39 0.018 0.032 0.46 0.81 0.035 0.050 0.89 1.27 0.205 0.228 5.21 5.79 0.047 0.055 1.20 1.40 0.018 0.024 0.45 0.60 0.250 0.268 6.35 6.81 0.205 0.215 5.20 5.46 0.235 0.245 5.97 6.22 0.100 0.108 2.55 2.74 0.025 0.040 0.64 1.02 0.025 0.035 0.64 0.89 0.090 2.28 DPAK THYRISTOR (REV: R0)
R0 (20-May 2004)

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