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| PROCESS Small Signal Transistor PNP - Amp/Switch Transistor Chip CP592 Central TM Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 47,150 PRINCIPAL DEVICE TYPES 2N3906 CMPT3906 CMST3906 CXT3906 CZT3906 EPITAXIAL PLANAR 12 x 20 MILS 9.0 MILS 3.6 X 3.6 MILS 3.6 X 3.6 MILS Al - 30,000A Au - 18,000A BACKSIDE COLLECTOR w w w .D at aS 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1-August 2002) he et 4U .c om www..com Central TM PROCESS CP592 Semiconductor Corp. Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1-August 2002) |
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