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| APT30M75BFLL APT30M75SFLL 300V 44A 0.075 BFLL D3PAK TO-247 POWER MOS 7 (R) R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current 1 SFLL * Increased Power Dissipation * Easier To Drive * TO-247 or Surface Mount D3PAK Package * FAST RECOVERY BODY DIODE D G S All Ratings: TC = 25C unless otherwise specified. APT30M75 UNIT Volts Amps 300 44 176 30 40 329 2.63 -55 to 150 300 44 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/C C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 1300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 300 44 0.075 250 1000 100 3 5 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 22A) Ohms A nA Volts 1-2003 050-7164 Rev A Zero Gate Voltage Drain Current (VDS = 300V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 240V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Q gs Q gd t d(on) tr t d(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT30M75 BFLL - SFLL Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 200V ID = 44A @ 25C VGS = 15V VDD = 200V ID = 44A @ 25C RG = 0.6 MIN TYP MAX UNIT pF 3018 771 43 57 21 23 13 3 20 2 ns nC Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD dv/ dt Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery 1 2 dt MIN TYP MAX UNIT Amps Volts V/ns ns 44 176 1.3 8 Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C (Body Diode) (VGS = 0V, IS = -44A) 5 dv/ t rr Qrr IRRM Reverse Recovery Time (IS = -44A, di/dt = 100A/s) Reverse Recovery Charge (IS = -44A, di/dt = 100A/s) Peak Recovery Current (IS = -44A, di/dt = 100A/s) 200 400 1.1 2.7 10 15.1 C Amps THERMAL CHARACTERISTICS Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W 0.38 40 4 Starting Tj = +25C, L = 1.34mH, RG = 25, Peak IL = 44A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID44A di/dt 700A/s VR VDSS TJ 150C 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 APT Reserves the right to change, without notice, the specifications and information contained herein. 0.40 , THERMAL IMPEDANCE (C/W) 0.35 0.30 0.9 0.7 0.25 0.20 0.15 0.3 0.10 0.05 0 10-5 0.1 0.05 10-4 SINGLE PULSE 1.0 0.5 Note: PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 1-2003 050-7164 Rev A Z JC 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Typical Performance Curves 100 RC MODEL APT30M75 BFLL - SFLL 90 ID, DRAIN CURRENT (AMPERES) VGS =15 &10V 8.5V 80 70 60 50 40 30 20 10 7V 6.5V 6V 7.5 8V 0.0329 0.00334 Junction temp. ( "C) Power (Watts) 0.158 0.00802 0.189 0.165 Case temperature FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 160 140 120 TJ = -55C 100 80 60 40 TJ = +25C 20 0 TJ = +125C 0 2 4 6 8 10 12 14 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS VDS> ID (ON) x RDS(ON) MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40 V GS 0 NORMALIZED TO = 10V @ I = 22A D ID, DRAIN CURRENT (AMPERES) 1.30 1.20 VGS=10V 1.10 1.00 VGS=20V 0.90 0.80 0 20 40 60 80 100 120 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 45 40 ID, DRAIN CURRENT (AMPERES) BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) I V D 1.15 35 30 25 20 15 10 5 0 25 1.10 1.05 1.00 0.95 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5 = 22A = 10V GS 0.90 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 2.0 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 1.1 1.0 0.9 0.8 1-2003 050-7164 Rev A 1.5 1.0 0.5 0.7 0.6 -50 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, RDS(ON) vs. TEMPERATURE -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE APT30M75 BFLL - SFLL 176 100 ID, DRAIN CURRENT (AMPERES) OPERATION HERE LIMITED BY RDS (ON) 20,000 10,000 Ciss C, CAPACITANCE (pF) 100S 10 1mS TC =+25C TJ =+150C SINGLE PULSE 1 1 10 100 300 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA I D 1,000 Coss 100 Crss 10mS 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 16 = 44A 200 100 12 VDS=60V VDS=150V VDS=240V TJ =+150C TJ =+25C 10 8 4 20 30 40 50 60 70 80 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE 0 0 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE TO-247 Package Outline Drain (Heat Sink) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC D PAK Package Outline 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 13.41 (.528) 13.51 (.532) 3 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 1.04 (.041) 1.15 (.045) Drain 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) Revised 4/18/95 13.79 (.543) 13.99 (.551) Revised 8/29/97 11.51 (.453) 11.61 (.457) 0.46 (.018) 0.56 (.022) {3 Plcs} 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.} 1-2003 19.81 (.780) 20.32 (.800) 1.22 (.048) 1.32 (.052) 3.81 (.150) 4.06 (.160) (Base of Lead) Gate Drain Source Heat Sink (Drain) and Leads are Plated 050-7164 Rev A 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Source Drain Gate Dimensions in Millimeters (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058 |
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