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APT1003RKFLL
1000V 4A 3.00
POWER MOS 7
(R)
R
FREDFET
TO-220
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg * Increased Power Dissipation * Easier To Drive * TO-220 Package * FAST RECOVERY BODY DIODE
G
D
S
D G S
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
All Ratings: TC = 25C unless otherwise specified.
APT1003RKFLL UNIT Volts Amps
1000 4 16 30 40 139 1.11 -55 to 150 300 4 10
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
425
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
1000 3.00 250 1000 100 3 5
(VGS = 10V, 2A)
Ohms A nA Volts
1-2004 050-7111 Rev A
Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD
dv/ dt
APT1003RKFLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 500V ID = 4A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 500V ID = 4A @ 25C 6 RG = 1.6 INDUCTIVE SWITCHING @ 25C VDD = 667V, VGS = 15V ID = 4A, RG = 5 6 INDUCTIVE SWITCHING @ 125C VDD = 667V, VGS = 15V ID = 4A, RG = 5
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
MIN
TYP
MAX
UNIT pF
694 135 25 34 5 22 8 4 25 10 13 42 40 48
MIN TYP MAX
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT Amps Volts V/ns ns
4 16 1.3 18
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN
(Body Diode) (VGS = 0V, IS = -4A)
5
dv/
t rr
Reverse Recovery Time (IS = -4A, di/dt = 100A/s) Reverse Recovery Charge (IS = -4A, di/dt = 100A/s) Peak Recovery Current (IS = -4A, di/dt = 100A/s) Characteristic Junction to Case Junction to Ambient
250 515 0.50 1.1 8.3 11.5
TYP MAX
Q rr IRRM
C
Amps
THERMAL CHARACTERISTICS
Symbol RJC RJA UNIT C/W
0.90 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
1.0
, THERMAL IMPEDANCE (C/W)
4 Starting Tj = +25C, L = 53.13mH, RG = 25, Peak IL = 4A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID4A di/dt 700A/s VR VDSSV TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.80
0.9
0.7 0.60 0.5 0.40 0.3 0.20 0.1 0.05 0 10-5 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10-4 1.0 SINGLE PULSE Note:
PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
1-2004
050-7111 Rev A
Z
JC
Typical Performance Curves
10 VGS =15 & 10V
ID, DRAIN CURRENT (AMPERES)
APT1003RKFLL
7.5V 8 6.5V 6 6V 4 5.5V 2 5V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
7V
RC MODEL Junction temp. (C) 0.386 Power (watts) 0.508 Case temperature. (C) 0.0903F 0.00336F
0
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 16 14 12 10 8 6 4 2 TJ = +125C 0 0 1 2 3 4 5 6 7 8 9 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS TJ = +25C
VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE
1.40
NORMALIZED TO V = 10V @ 2A
GS
ID, DRAIN CURRENT (AMPERES)
1.30 VGS=10V 1.20
TJ = -55C
1.10 VGS=20V
1.00
0.90 0.80
0
23 456 7 8 9 10 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
1
4 3.5
ID, DRAIN CURRENT (AMPERES) BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
I V
D
1.15
1.10 1.05
3 2.5 2 1.5 1 0.5 0 25
1.00
0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
2.5
= 2A = 10V
GS
2.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.1
1.0
1.5
0.9
1.0
0.5
0.7 0.6 -50
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7111 Rev A
11-2004
0.8
16 10
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE LIMITED BY RDS (ON)
4,000
APT1003RKFLL
5 100S
C, CAPACITANCE (pF)
1,000
Ciss
1 .5 TC =+25C TJ =+150C SINGLE PULSE 1 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 16
I
D
100
Coss
1mS 10mS
Crss 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 100 10
.1
= 4A
12
VDS= 200V
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
TJ =+150C TJ =+25C
8
VDS= 500V
VDS= 800V
10
4
10 15 20 25 30 35 40 45 50 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 25 td(off) 20
td(on) and td(off) (ns)
0 0
5
0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 70 60 50
V
DD G
1
= 667V
R
= 5
T = 125C
J
L = 100H V
DD G
= 667V
15
R
= 5
tr and tf (ns)
T = 125C
J
40 30 20
tf
L = 100H
10
5 td(on) 0 0 4 5 6 7 8 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
V
DD G
10 0
tr 0 1 2 3
1
2
3
4 5 6 7 8 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 140 120
SWITCHING ENERGY (J)
V I
DD
90 80
SWITCHING ENERGY (J)
= 667V
= 667V
R
= 5
D J
= 4A
T = 125C
J
70 60 50 40 30 20 10 0
Eoff
T = 125C L = 100H E ON includes diode reverse recovery.
L = 100H E ON includes diode reverse recovery.
Eon
100 80 60 40 20 0
Eoff
11-2004
Eon
050-7111 Rev A
4 5 6 7 8 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
0
1
2
3
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
5
Typical Performance Curves
APT1003RKFLL
10% Gate Voltage TJ125C
90%
Gate Voltage TJ125C
td(on)
Drain Current
td(off)
Drain Voltage
tr
5% 90% 10% Switching Energy 5% Drain Voltage
90% 10% 0
tf
Switching Energy
Drain Current
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT15DF100
V DD
IC
V CE
G D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-220AC Package Outline
1.39 (.055) 0.51 (.020)
Drain
10.66 (.420) 9.66 (.380) 5.33 (.210) 4.83 (.190) 6.85 (.270) 5.85 (.230)
16.51 (.650) 14.23 (.560)
3.42 (.135) 2.54 (.100)
4.08 (.161) Dia. 3.54 (.139)
6.35 (.250) MAX. 14.73 (.580) 12.70 (.500)
0.50 (.020) 0.41 (.016) 2.92 (.115) 2.04 (.080) 4.82 (.190) 3.56 (.140)
Gate
1.01 (.040) 3-Plcs. 0.38 (.015) 2.79 (.110) 2.29 (.090) 5.33 (.210) 4.83 (.190)
1.77 (.070) 3-Plcs. 1.15 (.045)
Dimensions in Millimeters and (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7111 Rev A
11-2004
Drain Source

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